Arc-Assisted Synthesis of Germanium Nanocrystals in Argon

2021 ◽  
Vol 55 (5) ◽  
pp. 402-406
Author(s):  
B. A. Timerkaev ◽  
B. R. Shakirov ◽  
A. A. Kaleeva ◽  
A. I. Saifutdinov
Keyword(s):  
Germanium Nanocrystals

Tetragonal Phase Germanium Nanocrystals in Lithium Ion Batteries

ACS Nano ◽  
2013 ◽  
Vol 7 (10) ◽  
pp. 9075-9084 ◽  
Author(s):  
Yong Jae Cho ◽  
Hyung Soon Im ◽  
Han Sung Kim ◽  
Yoon Myung ◽  
Seung Hyuk Back ◽  
...  
Keyword(s):  
Lithium Ion Batteries ◽  
Tetragonal Phase ◽  
Lithium Ion ◽  
Germanium Nanocrystals

Strong quantum-confinement effects in the conduction band of germanium nanocrystals

2004 ◽  
Vol 84 (20) ◽  
pp. 4056-4058 ◽  
Author(s):  
C. Bostedt ◽  
T. van Buuren ◽  
T. M. Willey ◽  
N. Franco ◽  
L. J. Terminello ◽  
...  
Keyword(s):  
Conduction Band ◽  
Quantum Confinement ◽  
Confinement Effects ◽  
Quantum Confinement Effects ◽  
Germanium Nanocrystals

Photoluminescence Quantum Efficiency of Self Assembled Germanium Nanocrystals

2019 ◽  
Vol 19 (8) ◽  
pp. 31-42
Author(s):  
David J. Lockwood ◽  
Nelson Rowell ◽  
Isabelle Berbezier ◽  
Antoine Ronda
Keyword(s):  
Quantum Efficiency ◽  
Germanium Nanocrystals ◽  
Self Assembled

Optical Properties of Germanium Nanocrystals

1999 ◽  
Vol 175 (1) ◽  
pp. 23-31 ◽  
Author(s):  
M. Palummo ◽  
G. Onida ◽  
R. Del Sole
Keyword(s):  
Optical Properties ◽  
Germanium Nanocrystals

Defects in Germanium Nanocrystals Produced by Ion Implantation

2013 ◽  
Vol 709 ◽  
pp. 148-152
Author(s):  
Yu Juan Zhang ◽  
Lei Shang
Keyword(s):  
Electron Microscopy ◽  
Light Emission ◽  
Stacking Faults ◽  
Implantation Dose ◽  
Defect Structures ◽  
High Temperature Annealing ◽  
Planar Defects ◽  
Transmission Electron ◽  
Microstructural Defects ◽  
Germanium Nanocrystals

Germanium nanocrystals (Ge-nc) were produced by the implantation of Ge+ into a SiO2 film deposited on (100) Si, followed by a high-temperature annealing. High-resolution transmission electron microscopy (HRTEM) has been used to investigate the defect structures inside the Ge-nc produced by different implantation doses (1×1016, 2×1016, 4×1016 and 8×1016 cm-2). It has been found that the planar defects such as nanotwins and stacking faults (SFs) are dominant in Ge-nc (60%) for the samples with implantation doses higher than 2×1016 cm-2, while for the sample with an implantation dose lower than 1×1016 cm-2, fewer planar defects are observed in the Ge-nc (20%). The percentages of nanotwins in the planar defects are 87%, 77%, 67% and 60% in four samples, respectively. The twinning structures include single twins, double twins and multiple twins. We also found that there are only SFs in some nanocrystals, and in others the SFs coexist with twins. These microstructural defects are expected to play an important role in the light emission from the Ge-nc.

Memory and Coulomb blockade effects in germanium nanocrystals embedded in amorphous silicon on silicon dioxide

2007 ◽  
Vol 102 (9) ◽  
pp. 093704 ◽  
Author(s):  
K. Gacem ◽  
A. El Hdiy ◽  
M. Troyon ◽  
I. Berbezier ◽  
P. D. Szkutnik ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Amorphous Silicon ◽  
Coulomb Blockade ◽  
Germanium Nanocrystals

scholarly journals Size Controlled Synthesis of Germanium Nanocrystals: Effect of Ge Precursor and Hydride Reducing Agent

2015 ◽  
Vol 2015 ◽  
pp. 1-9 ◽  
Author(s):  
Darragh Carolan ◽  
Hugh Doyle
Keyword(s):  
Reducing Agents ◽  
Excitation Wavelength ◽  
Atmospheric Conditions ◽  
Promising Alternative ◽  
Strong Emission ◽  
Quantum Confinement Effects ◽  
Solution Phase Synthesis ◽  
Germanium Nanocrystals ◽  
High Carrier ◽  
Halide Salts

Germanium nanocrystals (Ge NCs) have attracted increasing attention as a promising alternative to II–VI and IV–VI semiconductor materials as they are cheap, “green,” electrochemically stable, and compatible with existing CMOS processing methods. Germanium is a particularly attractive material for optoelectronic applications as it combines a narrow band gap with high carrier mobilities and a large exciton Bohr radius. Solution-phase synthesis and characterisation of size monodisperse alkyl-terminated Ge NCs are demonstrated. Ge NCs were synthesised under inert atmospheric conditions via the reduction of Ge halide salts (GeX4) by hydride reducing agents within inverse micelles. Regulation of NC size is achieved by variation of germanium precursor and the strength of hydride reducing agents used. UV-Visible absorbance and photoluminescence spectroscopy showed strong significant quantum confinement effects, with moderate absorption in the UV spectral range, and strong emission in the violet with a marked dependence on excitation wavelength.

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