Mechanism of the interaction between Al2O3 and SiO2 during the chemical-mechanical polishing of sapphire with silicon dioxide

Author(s):  
E. A. Vovk ◽  
A. T. Budnikov ◽  
M. V. Dobrotvorskaya ◽  
S. I. Krivonogov ◽  
A. Ya. Dan’ko
1998 ◽  
Vol 535 ◽  
Author(s):  
J. G. Fleming ◽  
Jung Han

AbstractWe have demonstrated the ability to bond thin layers of Si {111} onto either silicon dioxide or silicon nitride coated Si {100}. This was achieved using a “Smart-Cut” process. The integration of SiN required chemical mechanical polishing. The growth of GaN on a thin Si {111} on oxide on Si {100} stack was demonstrated.


2014 ◽  
Vol 48 (22) ◽  
pp. 13427-13433 ◽  
Author(s):  
Larry Zazzera ◽  
Brian Mader ◽  
Mark Ellefson ◽  
Jess Eldridge ◽  
Steve Loper ◽  
...  

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