Chemical Mechanical Polishing (CMP) in Magnetic Float Polishing (MFP) of Advanced Ceramic (Silicon Nitride) and Glass (Silicon Dioxide)

2001 ◽  
Vol 202-203 ◽  
pp. 1-14 ◽  
Author(s):  
M. Jiang ◽  
R. Komanduri
Keyword(s):  
Silicon Nitride ◽  
Silicon Dioxide ◽  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Advanced Ceramic ◽  
Magnetic Float

Growth of GaN on Thin SI {111} Layers Bonded to SI {100} Substrates

1998 ◽  
Vol 535 ◽  
Author(s):  
J. G. Fleming ◽  
Jung Han
Keyword(s):  
Silicon Nitride ◽  
Silicon Dioxide ◽  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Thin Layers

AbstractWe have demonstrated the ability to bond thin layers of Si {111} onto either silicon dioxide or silicon nitride coated Si {100}. This was achieved using a “Smart-Cut” process. The integration of SiN required chemical mechanical polishing. The growth of GaN on a thin Si {111} on oxide on Si {100} stack was demonstrated.

Research on Mechanism of Chemical Mechanical Polishing Process for Silicon Nitride Balls with CeO2 Abrasive

2008 ◽  
Vol 53-54 ◽  
pp. 131-136 ◽  
Author(s):  
Cong Rong Zhu ◽  
Bing Hai Lv ◽  
Ju Long Yuan
Keyword(s):  
Silicon Nitride ◽  
Chemical Mechanical Polishing ◽  
Mechanical Action ◽  
Mechanical Polishing ◽  
Test Results ◽  
Free Energy Of Formation ◽  
Key Factor ◽  
Ball Surface ◽  
Chemical Mechanical Polishing Process ◽  
Gibb’S Free Energy

Studies on chemical mechanical polishing (CMP) for silicon nitride (Si3N4) balls with CeO2 abrasive carried to investigate the mechanism of chemo-mechanical action between silicon nitride and CeO2. It is found that CeO2 is more effective to obtain smooth Si3N4 balls than other abrasives, and extremely smooth Si3N4 balls with surface Ra 4nm were obtained after polishing. XRD test is used to detect the reaction resultants on the ball surface, and the results show that SiO2 is the main resultant of the chemical reaction between Si3N4 and CeO2, and the test results confirm the correctness of thermodynamic analysis based on Gibb’s free energy of formation. It is also found that water play as a key factor in CMP.

Silicon Nitride Chemical Mechanical Polishing Mechanisms

1998 ◽  
Vol 145 (11) ◽  
pp. 3919-3925 ◽  
Author(s):  
Y. Z. Hu ◽  
R. J. Gutmann ◽  
T. P. Chow
Keyword(s):  
Silicon Nitride ◽  
Chemical Mechanical Polishing ◽  
Mechanical Polishing

Colloidal Silica based High Selectivity Shallow Trench Isolation (STI) Chemical Mechanical Polishing (CMP) Slurry

2005 ◽  
Vol 867 ◽  
Author(s):  
Kyoung-Ho Bu ◽  
Brij M. Moudgil
Keyword(s):  
Silicon Nitride ◽  
Chemical Mechanical Polishing ◽  
Colloidal Silica ◽  
Sodium Dodecyl ◽  
Mechanical Polishing ◽  
Wafer Surface ◽  
Shallow Trench Isolation ◽  
Pattern Size ◽  
Trench Isolation ◽  
Silica Slurry

AbstractAmong various properties of chemical mechanical polishing (CMP) slurry, selectivity plays a key role in global planarization of high density and small pattern size shallow trench isolation (STI) process. Lack of adequate selectivity can lead to defects such as dishing and erosion. To improve the selectivity of STI CMP process, CMP characteristics of silica and silicon nitride wafer were investigated using colloidal silica slurry as a function of slurry pH. Sodium dodecyl sulfate (SDS), an anionic surfactant, was added to increase the selectivity of the slurry. As a result, selectivity increased from 3 to 25. It was concluded that selective passivation layer formed on silicon nitride wafer surface at acidic slurry pH range was responsible for the observed selectivity increase. Adsorption characteristics of SDS on silica and silicon nitride were measured as a function of slurry pH and concentration of SDS. As indicated by zeta potential behavior under acidic pH conditions, SDS adsorption on silicon nitride was significantly higher han silica due to the electrostatic forces. Significantly higher SDS coating on silicone nitride seems to have resulted in lubrication layer leading to increased polishing selectivity.

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