Current–voltage characteristics of high-voltage 4H-SiC p +–n 0–n + diodes in the avalanche breakdown mode

2017 ◽  
Vol 51 (3) ◽  
pp. 374-378 ◽  
Author(s):  
P. A. Ivanov ◽  
A. S. Potapov ◽  
T. P. Samsonova ◽  
I. V. Grekhov
Keyword(s):  
High Voltage ◽  
Avalanche Breakdown ◽  
Current Voltage ◽  
Current Voltage Characteristics

Isothermal current–voltage characteristics of high-voltage 4H-SiC junction barrier Schottky rectifiers

2016 ◽  
Vol 50 (5) ◽  
pp. 656-661
Author(s):  
M. E. Levinshtein ◽  
P. A. Ivanov ◽  
Q. J. Zhang ◽  
J. W. Palmour
Keyword(s):  
High Voltage ◽  
Schottky Rectifiers ◽  
Current Voltage ◽  
Current Voltage Characteristics

scholarly journals FRACTAL PROPERTIES OF MICROPLASMA BREAKDOWN AND STRUCTURAL HETEROGENEITY OF SEMICONDUCTOR MATERIALS

2019 ◽  
Vol 3 ◽  
pp. 105
Author(s):  
Samuil Khanin ◽  
Antonina Shashkina
Keyword(s):  
Fractal Dimension ◽  
Structural Heterogeneity ◽  
Semiconductor Materials ◽  
Avalanche Breakdown ◽  
Semiconductor Structures ◽  
Fractal Properties ◽  
Current Voltage ◽  
Structural Inhomogeneities ◽  
Current Voltage Characteristics ◽  
Microplasma Breakdown

This work presents experimental results on the study of current-voltage characteristics and oscillograms of microplasma pulses of the p-n-junction avalanche breakdown. Based on the latter, the pulse duration distributions are determined. As a result, it is shown that microplasma noise has fractal properties. The latter form the basis of avalanche breakdown types developed classification. The correlation between the fractal dimension of microplasma noise and structural inhomogeneities of functional semiconductor structures is revealed.

scholarly journals Efficiency and Droop Improvement in GaN-Based High-Voltage Flip Chip LEDs

2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
Yen-Chih Chiang ◽  
Bing-Cheng Lin ◽  
Kuo-Ju Chen ◽  
Sheng-Huan Chiu ◽  
Chien-Chung Lin ◽  
...  
Keyword(s):  
High Voltage ◽  
Flip Chip ◽  
Light Emitting Diode ◽  
Bragg Reflector ◽  
Light Extraction ◽  
Efficiency Enhancement ◽  
Distributed Bragg Reflector ◽  
Light Emitting ◽  
Current Voltage ◽  
Current Voltage Characteristics

The GaN-based high-voltage flip chip light-emitting diode (HVFC-LED) is designed and developed for the purpose of efficiency enhancement. In our design, the distributed Bragg reflector (DBR) is deposited at the bonded substrate to increase the light extraction. After the flip chip process, the general current-voltage characteristics between the flip chip sample and the traditional sample are essentially the same. With the help of great thermal conductive silicon substrate and the bottom DBR, the HVFC-LED is able to enhance the power by 37.1% when compared to the traditional high-voltage LEDs. The wall-plug efficiencies of the HVFC-LED also show good droop reduction as high as 9.9% compared to the traditional devices.

Current–Voltage Characteristics of the Initial Stage of Arc Discharge in a High-Voltage Vacuum Diode

2019 ◽  
Vol 45 (6) ◽  
pp. 616-619
Author(s):  
S. G. Davydov ◽  
A. N. Dolgov ◽  
A. V. Korneev ◽  
R. Kh. Yakubov
Keyword(s):  
High Voltage ◽  
Arc Discharge ◽  
Vacuum Diode ◽  
Initial Stage ◽  
Current Voltage ◽  
Current Voltage Characteristics
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