Isothermal current–voltage characteristics of high-voltage silicon carbide rectifier p–i–n diodes at very high current densities

2007 ◽  
Vol 22 (3) ◽  
pp. 253-258 ◽  
Author(s):  
M E Levinshtein ◽  
T T Mnatsakanov ◽  
P A Ivanov ◽  
J W Palmour ◽  
M K Das ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Voltage ◽  
High Current ◽  
Current Voltage ◽  
Current Densities ◽  
Current Voltage Characteristics ◽  
Very High

Forward current-voltage characteristics of gallium arsenide power diodes at high current densities

1988 ◽  
Vol 31 (6) ◽  
pp. 1101-1104 ◽  
Author(s):  
L.A. Delimova ◽  
Yu.V. Zhilyaev ◽  
V.Yu. Kachorovsky ◽  
M.E. Levinshtein ◽  
V.V. Rossin
Keyword(s):  
Gallium Arsenide ◽  
High Current ◽  
Power Diodes ◽  
Forward Current ◽  
Current Voltage ◽  
Current Densities ◽  
Current Voltage Characteristics

Steady-State and Transient Forward Current-Voltage Characteristics of 5.5 kV 4H-Silicon Carbide Diodes at High and Superhigh Current Densities

2000 ◽  
Vol 338-342 ◽  
pp. 1319-1322
Author(s):  
N.V. Dyakonova ◽  
Pavel A. Ivanov ◽  
V.A. Kozlov ◽  
Michael E. Levinshtein ◽  
John W. Palmour ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Steady State ◽  
Forward Current ◽  
Current Voltage ◽  
Current Densities ◽  
Current Voltage Characteristics

Steady-state and transient forward current-voltage characteristics of 4H-silicon carbide 5.5 kV diodes at high and superhigh current densities

1999 ◽  
Vol 46 (11) ◽  
pp. 2188-2194 ◽  
Author(s):  
N.V. Dyakonova ◽  
P.A. Ivanov ◽  
V.A. Kozlov ◽  
M.E. Levinshtein ◽  
J.W. Palmour ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Steady State ◽  
Forward Current ◽  
Current Voltage ◽  
Current Densities ◽  
Current Voltage Characteristics

Current–voltage characteristics of Schottky diodes at high current densities under the injection of minority carriers

2017 ◽  
Vol 51 (8) ◽  
pp. 1081-1086
Author(s):  
T. T. Mnatsakanov ◽  
A. G. Tandoev ◽  
M. E. Levinshtein ◽  
S. N. Yurkov ◽  
J. W. Palmour
Keyword(s):  
Schottky Diodes ◽  
High Current ◽  
Current Voltage ◽  
Current Densities ◽  
Current Voltage Characteristics ◽  
Minority Carriers

Cathodic Evolution of Hydrogen at Very High Current Densities

Nature ◽  
1950 ◽  
Vol 165 (4193) ◽  
pp. 403-404 ◽  
Author(s):  
A. M. AZZAM ◽  
J. O'M. BOCKRIS
Keyword(s):  
High Current ◽  
Current Densities ◽  
Very High

Electronic Properties of Femtosecond Laser Induced Modified Spots on Single Crystal Silicon Carbide

2010 ◽  
Vol 645-648 ◽  
pp. 239-242 ◽  
Author(s):  
Takuro Tomita ◽  
M. Iwami ◽  
M. Yamamoto ◽  
M. Deki ◽  
Shigeki Matsuo ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Femtosecond Laser ◽  
Single Crystal ◽  
Specific Resistance ◽  
Single Crystal Silicon ◽  
Metal Contacts ◽  
Crystal Silicon ◽  
Current Voltage ◽  
Fs Laser ◽  
Current Voltage Characteristics

Femtosecond (fs) laser modification on single crystal silicon carbide (SiC) was studied from the viewpoints of electric conductivity. Fourier transform infrared (FTIR) spectroscopy was carried out on femtosecond laser modified area. The intensity decrease of reststrahlen band due to the modification was observed, and this decrease was explained by the degradation of crystallinity due to the laser irradiation. Polarization dependence of reststrahlen band was also observed on laser modified samples. Current-voltage characteristics and Hall measurements on fs-laser modified region were carried out by fabricating the metal contacts on the ion implanted areas. The specific resistance up to 5.9×10-2 m was obtained for fs-laser modified area.

Investigation of Bipolar Degradation of 1.2 kV BJTs under Different Current and Temperature Conditions

2020 ◽  
Vol 1004 ◽  
pp. 464-471
Author(s):  
Sarah Rugen ◽  
Siddarth Sundaresan ◽  
Ranbir Singh ◽  
Nando Kaminski
Keyword(s):  
Silicon Carbide ◽  
High Voltage ◽  
Current Density ◽  
High Power ◽  
Stacking Faults ◽  
Bipolar Junction Transistors ◽  
Mode Operation ◽  
Different Temperatures ◽  
Current Densities ◽  
The Impact

Bipolar silicon carbide devices are attractive for high power applications offering high voltage devices with low on-state voltages due to plasma flooding. Unfortunately, these devices suffer from bipolar degradation, which causes a significant degradation of the on-state voltage. To explore the generation of stacking faults, which cause the degradation, the impact of the current density and temperature on bipolar degradation is investigated in this work. The analysis is done by stressing the base-collector diode of 1.2 kV bipolar junction transistors (BJTs) as well as the BJTs in common-emitter mode operation with different current densities at different temperatures.

Sign in / Sign up

Export Citation Format

Share Document