scholarly journals FRACTAL PROPERTIES OF MICROPLASMA BREAKDOWN AND STRUCTURAL HETEROGENEITY OF SEMICONDUCTOR MATERIALS

Author(s):  
Samuil Khanin ◽  
Antonina Shashkina

This work presents experimental results on the study of current-voltage characteristics and oscillograms of microplasma pulses of the p-n-junction avalanche breakdown. Based on the latter, the pulse duration distributions are determined. As a result, it is shown that microplasma noise has fractal properties. The latter form the basis of avalanche breakdown types developed classification. The correlation between the fractal dimension of microplasma noise and structural inhomogeneities of functional semiconductor structures is revealed.

2010 ◽  
Vol 24 (19) ◽  
pp. 3723-3734
Author(s):  
D. I. SHEKA ◽  
O. V. TRETYAK ◽  
A. M. KOROL ◽  
A. K. SEN ◽  
A. MOOKERJEE

Electronic processes in a semiconductor system consisting of some resonant tunneling structures, built in the depletion region of a Schottky barrier, are investigated. It is shown that the Schottky barrier can block or unblock the resonant tunneling current effectively. Tunneling processes do reveal the coherent character. Sharply nonlinear current–voltage characteristics are observed for both the forward and the reverse branches.


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