Quantum corrections to the conductivity and anomalous Hall effect in InGaAs quantum wells with a spatially separated Mn impurity

2017 ◽  
Vol 51 (10) ◽  
pp. 1313-1320 ◽  
Author(s):  
L. N. Oveshnikov ◽  
E. I. Nekhaeva
Keyword(s):  
Quantum Wells ◽  
Hall Effect ◽  
Anomalous Hall Effect ◽  
Quantum Corrections

Intrinsic photoinduced anomalous Hall effect in insulating GaAs/AlGaAs quantum wells at room temperature

2013 ◽  
Vol 102 (20) ◽  
pp. 202408 ◽  
Author(s):  
J. L. Yu ◽  
Y. H. Chen ◽  
Y. Liu ◽  
C. Y. Jiang ◽  
H. Ma ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Hall Effect ◽  
Room Temperature ◽  
Anomalous Hall Effect

Observation of the photoinduced anomalous Hall effect spectra in insulating InGaAs/AlGaAs quantum wells at room temperature

2012 ◽  
Vol 100 (14) ◽  
pp. 142109 ◽  
Author(s):  
J. L. Yu ◽  
Y. H. Chen ◽  
C. Y. Jiang ◽  
Y. Liu ◽  
H. Ma ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Hall Effect ◽  
Room Temperature ◽  
Anomalous Hall Effect

Anomalous Hall Effect in 2D DMS

2015 ◽  
Vol 233-234 ◽  
pp. 109-112 ◽  
Author(s):  
Leonid N. Oveshnikov ◽  
V.A. Kulbachinskii ◽  
Alexander B. Davydov ◽  
Boris A. Aronzon
Keyword(s):  
Quantum Wells ◽  
Hall Effect ◽  
Anomalous Hall Effect ◽  
Free Carrier ◽  
Temperature Decrease ◽  
Percolation Transition ◽  
Sign Change ◽  
Intrinsic Mechanism ◽  
Spin Dependent Scattering ◽  
Mn Doped

Transport and magnetic properties of δ-Mn doped GaAs/InGaAs/GaAs quantum wells (QW) with various In content were studied at temperatures 4.2K≤T≤300K. Fluctuation potential (FP) appeared to be crucial for transport characteristics of structures under investigation. The magnetic percolation transition was observed at temperatureTpin the range 20 - 40K. TheTpdependence on the In content is nonmonotonic due to the peculiarities of free-carrier mediated exchange interaction mechanisms. The change of the anomalous Hall effect (AHE) sign with decreasing temperature was detected at temperatures close to theTp. The main reason of the AHE sign change is the variation of contributions of different AHE mechanisms (intrinsic and side-jump) caused by the reduction of spin-dependent scattering intensity with temperature decrease. We believe that our results are the experimental observation of the AHE intrinsic mechanism in 2D.

scholarly journals Quantum Anomalous Hall Effect in Magnetically Doped InAs/GaSb Quantum Wells

2014 ◽  
Vol 113 (14) ◽  
Author(s):  
Qing-Ze Wang ◽  
Xin Liu ◽  
Hai-Jun Zhang ◽  
Nitin Samarth ◽  
Shou-Cheng Zhang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Hall Effect ◽  
Anomalous Hall Effect ◽  
Quantum Anomalous Hall Effect ◽  
Magnetically Doped

Anomalous hall effect in Mn δ-doped GaAs/In0.17Ga0.83As/GaAs quantum wells with high hole mobility

JETP Letters ◽  
2007 ◽  
Vol 85 (1) ◽  
pp. 27-33 ◽  
Author(s):  
B. A. Aronzon ◽  
V. A. Kul’bachinskiĭ ◽  
P. V. Gurin ◽  
A. B. Davydov ◽  
V. V. Ryl’kov ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Hall Effect ◽  
Hole Mobility ◽  
Anomalous Hall Effect

scholarly journals Quantum effects in magnetotransport of InGaAs quantum wells with remote Mn impurities

2018 ◽  
Vol 185 ◽  
pp. 06007
Author(s):  
Leonid Oveshnikov ◽  
Leonid Morgun ◽  
Elena Nekhaeva ◽  
Vladimir Kulbachinskii ◽  
Boris Aronzon
Keyword(s):  
Magnetic Field ◽  
Quantum Wells ◽  
Hall Effect ◽  
Quantum Corrections ◽  
Magnetic Impurities ◽  
Magnetic Subsystem ◽  
Magnetic Structures ◽  
Conduction Channel ◽  
Shubnikov De Haas Oscillations ◽  
The Impact

We have studied magnetoresistance and Hall effect of GaAs/InxGa1−xAs quantum wells with remote Mn impurity. Temperature and magnetic field dependencies of samples resistivity indicate several effects related to the magnetic subsystem. Shubnikov - de Haas oscillations indicate the presence of several types of regions in conduction channel with significantly different hole mobilities. We discussed the impact of magnetic impurities on quantum corrections to conductivity by comparing our results with the data for similar non-magnetic structures. Our results suggest that the presence of Mn atoms leads to the damping of quantum corrections in in the investigated structures.

Sign in / Sign up

Export Citation Format

Share Document