Dispersive Transport of Hydrogen in MOS Structures after Exposure to Ionizing Radiation

2020 ◽  
Vol 54 (10) ◽  
pp. 1215-1219
Author(s):  
O. V. Aleksandrov
Keyword(s):  
Ionizing Radiation ◽  
Dispersive Transport ◽  
Mos Structures

scholarly journals Модель влияния смещения затвора при ионизирующем облучении МОП-структур

2020 ◽  
Vol 54 (2) ◽  
pp. 189
Author(s):  
О.В. Александров ◽  
С.А. Мокрушина
Keyword(s):  
Ionizing Radiation ◽  
Silicon Substrate ◽  
Gate Dielectric ◽  
Quantitative Model ◽  
Threshold Shift ◽  
Gate Bias ◽  
Surface Component ◽  
Mos Structures

The new quantitative model of influence of gate bias on the threshold shift of MOS-structures at the ionizing radiation which is based on the accounting of holes trapping in a thin border layer of gate dielectric on interface with a silicon substrate is developed. The model allows to describe the smooth growth of threshold shift with gate bias – approximately linear from a dose for a surface component and nonlinear for a volume component. The threshold shift at a negative gate bias is modelled on the basis of the accounting of holes generation at ionizing radiation in the border layer.

Model of the Effect of the Gate Bias on MOS Structures under Ionizing Radiation

2020 ◽  
Vol 54 (2) ◽  
pp. 240-245
Author(s):  
O. V. Aleksandrov ◽  
S. A. Mokrushina
Keyword(s):  
Ionizing Radiation ◽  
Gate Bias ◽  
Mos Structures
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