The influence of ionizing radiation intensity on the surface states in MOS-structures

2020 ◽  
Author(s):  
Oleg Aleksandrov
Keyword(s):  
Ionizing Radiation ◽  
Radiation Intensity ◽  
Surface States ◽  
Mos Structures

scholarly journals Модель влияния смещения затвора при ионизирующем облучении МОП-структур

2020 ◽  
Vol 54 (2) ◽  
pp. 189
Author(s):  
О.В. Александров ◽  
С.А. Мокрушина
Keyword(s):  
Ionizing Radiation ◽  
Silicon Substrate ◽  
Gate Dielectric ◽  
Quantitative Model ◽  
Threshold Shift ◽  
Gate Bias ◽  
Surface Component ◽  
Mos Structures

The new quantitative model of influence of gate bias on the threshold shift of MOS-structures at the ionizing radiation which is based on the accounting of holes trapping in a thin border layer of gate dielectric on interface with a silicon substrate is developed. The model allows to describe the smooth growth of threshold shift with gate bias – approximately linear from a dose for a surface component and nonlinear for a volume component. The threshold shift at a negative gate bias is modelled on the basis of the accounting of holes generation at ionizing radiation in the border layer.

Creation of fast surface states by ionizing radiation

1967 ◽  
Vol 14 (9) ◽  
pp. 630-630 ◽  
Author(s):  
E.H. Snow ◽  
A.S. Grove ◽  
D.J. Fitzgerald
Keyword(s):  
Ionizing Radiation ◽  
Surface States

Phtovoltage Spectroscopy of Fast Surface States in Silicon MOS Structures

1982 ◽  
Vol 69 (1) ◽  
pp. K121-K123
Author(s):  
M. Seilenthal ◽  
K.-S. Rebane
Keyword(s):  
Surface States ◽  
Mos Structures
Sign in / Sign up

Export Citation Format

Share Document