Model of the Effect of the Gate Bias on MOS Structures under Ionizing Radiation

2020 ◽  
Vol 54 (2) ◽  
pp. 240-245
Author(s):  
O. V. Aleksandrov ◽  
S. A. Mokrushina
Keyword(s):  
Ionizing Radiation ◽  
Gate Bias ◽  
Mos Structures

scholarly journals Модель влияния смещения затвора при ионизирующем облучении МОП-структур

2020 ◽  
Vol 54 (2) ◽  
pp. 189
Author(s):  
О.В. Александров ◽  
С.А. Мокрушина
Keyword(s):  
Ionizing Radiation ◽  
Silicon Substrate ◽  
Gate Dielectric ◽  
Quantitative Model ◽  
Threshold Shift ◽  
Gate Bias ◽  
Surface Component ◽  
Mos Structures

The new quantitative model of influence of gate bias on the threshold shift of MOS-structures at the ionizing radiation which is based on the accounting of holes trapping in a thin border layer of gate dielectric on interface with a silicon substrate is developed. The model allows to describe the smooth growth of threshold shift with gate bias – approximately linear from a dose for a surface component and nonlinear for a volume component. The threshold shift at a negative gate bias is modelled on the basis of the accounting of holes generation at ionizing radiation in the border layer.

Light Emitting Diode with MOS Structures Containing Multiple-Stacked Si Quantum Dots

2007 ◽  
Vol 121-123 ◽  
pp. 557-560 ◽  
Author(s):  
J. Xu ◽  
Katsunori Makihara ◽  
Hidenori Deki ◽  
Yoshihiro Kawaguchi ◽  
Hideki Murakami ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Luminescence Intensity ◽  
Room Temperature ◽  
Light Emission ◽  
Light Emitting Diode ◽  
Infrared Light ◽  
Gate Bias ◽  
Light Emitting ◽  
Mos Structures ◽  
Si Quantum Dots

Light emitting diode with MOS structures containing multiple-stacked Si quantum dots (QDs)/SiO2 was fabricated and the visible-infrared light emission was observed a room temperature when the negative gate bias exceeded the threshold voltage. The luminescence intensity was increased linearly with increasing the injected current density. The possible luminescence mechanism was briefly discussed and the delta P doping was performed to obtain the doped Si QDs and the improvement of EL intensity was demonstrated.

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