Модель влияния смещения затвора при ионизирующем облучении МОП-структур
Keyword(s):
The new quantitative model of influence of gate bias on the threshold shift of MOS-structures at the ionizing radiation which is based on the accounting of holes trapping in a thin border layer of gate dielectric on interface with a silicon substrate is developed. The model allows to describe the smooth growth of threshold shift with gate bias – approximately linear from a dose for a surface component and nonlinear for a volume component. The threshold shift at a negative gate bias is modelled on the basis of the accounting of holes generation at ionizing radiation in the border layer.
2018 ◽
Vol 924
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pp. 229-232
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Keyword(s):
2007 ◽
Vol 121-123
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pp. 557-560
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Keyword(s):
2014 ◽
Vol 598
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pp. 361-364
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1987 ◽
Vol 34
(6)
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pp. 1355-1358
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