A Comparison of Positive Charge Generation in High Field Stressing and Ionizing Radiation on MOS Structures

1987 ◽  
Vol 34 (6) ◽  
pp. 1355-1358 ◽  
Author(s):  
W. L. Warren ◽  
P. M. Lenahan
Keyword(s):  
Ionizing Radiation ◽  
High Field ◽  
Positive Charge ◽  
Charge Generation ◽  
Mos Structures

Radiation Hardness for Silicon Oxide and Aluminum Oxide on 4H-SiC

2018 ◽  
Vol 924 ◽  
pp. 229-232 ◽  
Author(s):  
Anders Hallén ◽  
Sethu Saveda Suvanam
Keyword(s):  
Proton Irradiation ◽  
Silicon Oxide ◽  
Positive Charge ◽  
Gate Dielectric ◽  
Radiation Hardness ◽  
Flat Band ◽  
Capacitance Voltage ◽  
Cv Measurements ◽  
Radiation Hard ◽  
Mos Structures

The radiation hardness of two dielectrics, SiO2and Al2O3, deposited on low doped, n-type 4H-SiC epitaxial layers has been investigated by exposing MOS structures involving these materials to MeV proton irradiation. The samples are examined by capacitance voltage (CV) measurements and, from the flat band voltage shift, it is concluded that positive charge is induced in the exposed structures detectable for fluence above 1×1011cm-2. The positive charge increases with proton fluence, but the SiO2/4H-SiC structures are slightly more sensitive, showing that Al2O3can provide a more radiation hard passivation, or gate dielectric for 4H-SiC devices.

Comparison of Defect Generation by irradiation and High Field Stressing in MOS Structures

1990 ◽  
Vol 36 (3-4) ◽  
pp. 198-202
Author(s):  
R Lal ◽  
R M Patrikar ◽  
D Sarkar ◽  
J Vasi
Keyword(s):  
High Field ◽  
Defect Generation ◽  
Mos Structures
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