Synthesis of epitaxial silicon carbide films through the substitution of atoms in the silicon crystal lattice: A review

2014 ◽  
Vol 56 (8) ◽  
pp. 1507-1535 ◽  
Author(s):  
S. A. Kukushkin ◽  
A. V. Osipov ◽  
N. A. Feoktistov
Keyword(s):  
Silicon Carbide ◽  
Crystal Lattice ◽  
Silicon Crystal ◽  
Epitaxial Silicon

scholarly journals Potential of epitaxial silicon carbide microbeam resonators for chemical sensing

2016 ◽  
Vol 214 (4) ◽  
pp. 1600437 ◽  
Author(s):  
Atieh R. Kermany ◽  
James S. Bennett ◽  
Victor M. Valenzuela ◽  
Warwick P. Bowen ◽  
Francesca Iacopi
Keyword(s):  
Silicon Carbide ◽  
Chemical Sensing ◽  
Epitaxial Silicon

Mechanisms of interactions between atomic hydrogen and vacancies in the silicon crystal lattice

1996 ◽  
Vol 37 (1) ◽  
pp. 18-23
Author(s):  
V. M. Pinchuk ◽  
A. N. Nazarov ◽  
V. S. Lysenko ◽  
V. M. Kovalev
Keyword(s):  
Crystal Lattice ◽  
Atomic Hydrogen ◽  
Silicon Crystal

Investigation of Additional States in the Silicon Carbide Surface after Diffusion Welding

2012 ◽  
Vol 717-720 ◽  
pp. 275-278
Author(s):  
János Mizsei ◽  
Oleg Korolkov ◽  
Natalja Sleptsuk ◽  
Jana Toompuu ◽  
Toomas Rang
Keyword(s):  
Experimental Study ◽  
Silicon Carbide ◽  
Crystal Lattice ◽  
Surface States ◽  
Deep Levels ◽  
Probe Method ◽  
Diffusion Welding ◽  
Kelvin Probe ◽  
Kelvin Probe Method

This paper is a summary of the experimental study of deep levels in a SiC crystal lattice caused by diffusion welding (DW). Investigations were carried out by DLTS and Kelvin Probe methods. Investigations revealed that DLTS method is not applicable for identification of surface states. Research conducted by the Kelvin Probe method has shown an increase in the density of surface states after the diffusion welding from 2x1015 cm-2 to 3.5x1016 cm-2.

Nitrogen doping of epitaxial silicon carbide

2002 ◽  
Vol 236 (1-3) ◽  
pp. 101-112 ◽  
Author(s):  
U Forsberg ◽  
Ö Danielsson ◽  
A Henry ◽  
M.K Linnarsson ◽  
E Janzén
Keyword(s):  
Silicon Carbide ◽  
Nitrogen Doping ◽  
Epitaxial Silicon

Multiscale simulation for epitaxial silicon carbide growth by chlorides route

2010 ◽  
Vol 518 (6) ◽  
pp. S6-S11 ◽  
Author(s):  
Maurizio Masi ◽  
Alessandro Fiorucci ◽  
Massimo Camarda ◽  
Antonino La Magna ◽  
Francesco La Via
Keyword(s):  
Silicon Carbide ◽  
Multiscale Simulation ◽  
Epitaxial Silicon
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