Investigation of the Parameters of Superconducting and Insulating Elements of Structures Obtained on YBCO Films by Master Mask with Decreasing Their Size

Sol-gel processing of La2Zr2O7 (LZO) buffer layers on biaxially textured Ni–1.7% Fe–3% W alloy substrates using a continuous reel-to-reel dip-coating unit has been studied. The epitaxial LZO films obtained have a strong cube texture and uniform microstructure. The effects of increasing the annealing speed on the texture, microstructure, and carbon content retained in the film were studied. On top of the LZO films, epitaxial layers of yttria-stabilized zirconia and Ceria (CeO2) were deposited using rf sputtering, and YBa2Cu3Ox (YBCO) films were then deposited using pulsed laser deposition. Critical current densities (Jc) of 1.9 MA/cm2 at 77 K and self-field and 0.34 MA/cm2at 77 K and 0.5 T have been obtained on these films. These values are comparable to those obtained on YBCO films deposited on all-vacuum deposited buffer layers and the highest ever obtained using solution seed layers.

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Precisely determined temperature window size for the growth of high quality c-axis oriented YBCO films by photo-assisted MOCVD

Physica C Superconductivity ◽

10.1016/j.physc.2008.06.005 ◽

2008 ◽

Vol 468 (21) ◽

pp. 2213-2218 ◽

Cited By ~ 8

Author(s):

Guoxing Li ◽

Xiujun Fang ◽

Lei Zhao ◽

Shanwen Li ◽

Zhongmin Gao ◽

...

Keyword(s):

Window Size ◽

High Quality ◽

Ybco Films ◽

Temperature Window

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YBa2Cu3O7 Thin Films on Polycrystalline Diamond Films with Buffer Layers

MRS Proceedings ◽

10.1557/proc-275-137 ◽

1992 ◽

Vol 275 ◽

Cited By ~ 1

Author(s):

G. Cui ◽

C. P. Beetz ◽

B. A. Lincoln ◽

P. S. Kirlin

Keyword(s):

Thin Films ◽

Diamond Films ◽

Rf Sputtering ◽

Polycrystalline Diamond ◽

Fast Response ◽

Buffer Layers ◽

Multichip Modules ◽

Ir Detectors ◽

Ybco Films ◽

First Time

ABSTRACTThe deposition of in-situ YBa2CU3O7-δ Superconducting films on polycrystalline diamond thin films has been demonstrated for the first time. Three different composite buffer layer systems have been explored for this purpose: (1) Diamond/Zr/YSZ/YBCO, (2) Diamond/Si3N4/YSZ/YBCO, and (3) Diamond/SiO2/YSZ/YBCO. The Zr was deposited by dc sputtering on the diamond films at 450 to 820 °C. The YSZ was deposited by reactive on-axis rf sputtering at 680 to 750 °C. The Si3N4 and SiO2 were also deposited by on-axis rf sputtering at 400 to 700 °C. YBCO films were grown on the buffer layers by off-axis rf sputtering at substrate temperatures between 690 °C and 750 °C. In all cases, the as-deposited YBCO films were superconducting above 77 K. This demonstration enables the fabrication of low heat capacity, fast response time bolometric IR detectors and paves the way for the use of HTSC on diamond for interconnect layers in multichip modules.

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