Chemical Solution Deposition of Lanthanum Zirconate Buffer Layers on Biaxially Textured Ni–1.7% Fe–3% W Alloy Substrates for Coated-conductor Fabrication

2002 ◽  
Vol 17 (6) ◽  
pp. 1543-1549 ◽  
Author(s):  
S. Sathyamurthy ◽  
M. Paranthaman ◽  
T. Aytug ◽  
B. W. Kang ◽  
P. M. Martin ◽  
...  
Keyword(s):  
Sol Gel ◽  
Rf Sputtering ◽  
Cube Texture ◽  
Dip Coating ◽  
Buffer Layers ◽  
Lanthanum Zirconate ◽  
Solution Deposition ◽  
Ybco Films ◽  
Current Densities ◽  
Gel Processing

Sol-gel processing of La2Zr2O7 (LZO) buffer layers on biaxially textured Ni–1.7% Fe–3% W alloy substrates using a continuous reel-to-reel dip-coating unit has been studied. The epitaxial LZO films obtained have a strong cube texture and uniform microstructure. The effects of increasing the annealing speed on the texture, microstructure, and carbon content retained in the film were studied. On top of the LZO films, epitaxial layers of yttria-stabilized zirconia and Ceria (CeO2) were deposited using rf sputtering, and YBa2Cu3Ox (YBCO) films were then deposited using pulsed laser deposition. Critical current densities (Jc) of 1.9 MA/cm2 at 77 K and self-field and 0.34 MA/cm2at 77 K and 0.5 T have been obtained on these films. These values are comparable to those obtained on YBCO films deposited on all-vacuum deposited buffer layers and the highest ever obtained using solution seed layers.

Fabrication of High Jc YBa2Cu3O7-δ Coated Conductors Using Sol-Gel Buffer Layers On Nickel and Nickel Alloy Substrates

2001 ◽  
Vol 689 ◽  
Author(s):  
S. Sathyamurthy ◽  
M. Paranthaman ◽  
B. W. Kang ◽  
H. Y. Zhai ◽  
T. Aytug ◽  
...  
Keyword(s):  
Critical Current Density ◽  
Critical Current ◽  
Current Density ◽  
Sol Gel ◽  
Rf Sputtering ◽  
Cube Texture ◽  
Dip Coating ◽  
Coated Conductors ◽  
Buffer Layers ◽  
Ybco Films

Sol-gel processing of La2Zr2O7 (LZO) buffer layers on biaxially textured Ni-3 at.% W alloy substrates using a continuous reel-to-reel dip-coating unit has been studied. The epitaxial LZO films obtained have a strong cube texture and uniform microstructure. The effect of increasing the annealing speed on the texture, microstructure and the carbon content retained in the film were studied. On top of the LZO films, epitaxial layers of Yttria Stabilized Zirconia (YSZ) and Ceria (CeO2) were deposited using rf sputtering, and YBa2Cu3Ox (YBCO) films were then deposited using Pulsed Laser Deposition (PLD). A critical current density (Jc) of 1.9 MA/cm2 at 77K and self-field and 0.34 MA/cm2 at 77K and 0.5T have been obtained on these films. These values are comparable to those obtained on YBCO films deposited on all-vacuum deposited buffer layers, and are the highest ever obtained using solution seed layers. The use of all-solution buffers for coated conductor processing has also been explored. A critical current density of 1.1 MA/cm2 at 77 K and self-field was obtained on YBCO films grown be PLD on LZO buffered nickel substrates.

scholarly journals All chemical YBa2Cu3O7 superconducting multilayers: Critical role of CeO2 cap layer flatness

2009 ◽  
Vol 24 (4) ◽  
pp. 1446-1455 ◽  
Author(s):  
M. Coll ◽  
J. Gàzquez ◽  
R. Huhne ◽  
B. Holzapfel ◽  
Y. Morilla ◽  
...  
Keyword(s):  
Critical Role ◽  
High Energy ◽  
Buffer Layers ◽  
Solution Deposition ◽  
Ybco Films ◽  
Force Microscopy ◽  
Atomic Force ◽  
Current Densities ◽  
Atomically Flat

New advances toward microstructural improvement of epitaxial CeO2 films grown by chemical solution deposition and their use as buffer layers for YBa2Cu3O7 (YBCO) films are presented. We demonstrate that the degree of epitaxy and the fraction of (001) atomically flat surface area are controlled by the incorporation of tetravalent (Zr4+) or trivalent (Gd3+) cations into the ceria lattice. The degree of epitaxy has been investigated by means of Rutherford backscattering spectroscopy-channeling and reflection high-energy electron diffraction, and a new methodology is also presented to quantify the fraction of (001) atomically flat area from atomic force microscopy images. Results are further correlated with the superconducting properties, microstructure, and texture of YBCO films grown by the trifluoroacetate route. A comparison with pulsed laser deposition and YBCO films grown on the same ceria layers is also presented. This growth procedure has allowed us to obtain all chemical multilayer films with controlled microstructure and critical current densities above 4 MA cm−2 at 77 K.

Lanthanum zirconate: A single buffer layer processed by solution deposition for coated conductor fabrication

2002 ◽  
Vol 17 (9) ◽  
pp. 2181-2184 ◽  
Author(s):  
S. Sathyamurthy ◽  
M. Paranthaman ◽  
H-Y. Zhai ◽  
H. M. Christen ◽  
P. P. Martin ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Low Cost ◽  
Sol Gel ◽  
Single Layer ◽  
Coated Conductors ◽  
Buffer Layers ◽  
Solution Deposition ◽  
Sol Gel Process ◽  
Current Densities ◽  
First Time

A single layer of La2Zr2O7 (LZO), deposited on textured Ni and Ni–1.7% Fe–3% W (Ni–W) tapes by a low-cost sol-gel process, is used as buffer layer for the growth of YBa2Cu3O7−δ (YBCO) coated conductors. It is shown for the first time that such single buffer layers can be used for the deposition of YBCO yielding critical current densities (Jc) that are comparable to those typically obtained using CeO2/YSZ/Y2O2 trilayers on identical substrates, i.e., in excess of 1 MA/cm2 at 77 K and self-field. The properties of the YBCO films and the dependence of Jc on thickness of the LZO layer are investigated.

High-Jc YBCO coatings on reel-to-reel dip-coated Gd2O3 seed buffer layers epitaxially fabricated on biaxially textured Ni and Ni-(3at%W-1.7at%Fe) alloy tapes

2001 ◽  
Vol 689 ◽  
Author(s):  
Tolga Aytug ◽  
M. Paranthaman ◽  
S. Sathyamurthy ◽  
B. W. Kang ◽  
D. B. Beach ◽  
...  
Keyword(s):  
Low Cost ◽  
Dip Coating ◽  
Buffer Layers ◽  
Ex Situ ◽  
X Ray Diffraction ◽  
Ybco Films ◽  
Ni Alloy ◽  
Current Densities ◽  
Alloy Metal

ABSTRACTA low-cost, non-vacuum reel-to reel dip-coating system has been used to continuously fabricate epitaxial Gd2O3 buffer layers on mechanically strengthened, biaxially textured Ni- (3at.%W-1.7at%Fe), defined as Ni-alloy, metal tapes. X-ray diffraction analysis of the seed Gd2O3 layers indicated that well textured films can be obtained at processing temperatures (Tp) between 1100 and 1175°C. Processing speed did not significantly affect the crystalline quality of the Gd2O3. Scanning electron microscopy revealed a continuous, dense and crack-free surface morphology for these dip-coated buffers. The Gd2O3 layer thickness led to remarkable differences in the growth characteristics of the subsequent YSZ and CeO2 layers deposited by rfmagnetron sputtering. Epitaxial YBCO films grown by pulsed laser deposition on the short prototype CeO2/YSZ/Gd2O3/Ni-(3at%W-1.7at%Fe) conductors yielded self-field critical current densities (Jc) as high as 1.2×106 A/cm2 at 77 K. Pure Ni tapes were used to asses the viability of dip-coated buffers for long length coated conductor fabrication. The YBCO films, grown on 80 cm long and 1 cm wide CeO2/YSZ/Gd2O3 buffered Ni tapes by the industrially scalable ex-situ BaF2 precursor process, exhibited end-to-end self-field Jc of 6.25×105 A/cm2 at 77 K.

In-Situ Study of NiO Growth on Textured Nickel Tape Using Environmental Scanning Electron Microscope (ESEM) and Hot Stage

2001 ◽  
Vol 7 (S2) ◽  
pp. 1276-1277
Author(s):  
Y. Akin ◽  
R.E. Goddard ◽  
W. Sigmund ◽  
Y.S. Hascicek
Keyword(s):  
Buffer Layer ◽  
Lattice Mismatch ◽  
Sol Gel ◽  
Surface Oxidation ◽  
Dip Coating ◽  
Buffer Layers ◽  
Superconducting Film ◽  
Environmental Scanning ◽  
Cold Rolling And Annealing

Deposition of highly textured ReBa2Cu3O7−δ (RBCO) films on metallic substrates requires a buffer layer to prevent chemical reactions, reduce lattice mismatch between metallic substrate and superconducting film layer, and to prevent diffusion of metal atoms into the superconductor film. Nickel tapes are bi-axially textured by cold rolling and annealing at appropriate temperature (RABiTS) for epitaxial growth of YBa2Cu3O7−δ (YBCO) films. As buffer layers, several oxide thin films and then YBCO were coated on bi-axially textured nickel tapes by dip coating sol-gel process. Biaxially oriented NiO on the cube-textured nickel tape by a process named Surface-Oxidation- Epitaxy (SEO) has been introduced as an alternative buffer layer. in this work we have studied in situ growth of nickel oxide by ESEM and hot stage.Representative cold rolled nickel tape (99.999%) was annealed in an electric furnace under 4% hydrogen-96% argon gas mixture at 1050°C to get bi-axially textured nickel tape.

YBa2Cu3O7 Thin Films on Polycrystalline Diamond Films with Buffer Layers

1992 ◽  
Vol 275 ◽  
Author(s):  
G. Cui ◽  
C. P. Beetz ◽  
B. A. Lincoln ◽  
P. S. Kirlin
Keyword(s):  
Thin Films ◽  
Diamond Films ◽  
Rf Sputtering ◽  
Polycrystalline Diamond ◽  
Fast Response ◽  
Buffer Layers ◽  
Multichip Modules ◽  
Ir Detectors ◽  
Ybco Films ◽  
First Time

ABSTRACTThe deposition of in-situ YBa2CU3O7-δ Superconducting films on polycrystalline diamond thin films has been demonstrated for the first time. Three different composite buffer layer systems have been explored for this purpose: (1) Diamond/Zr/YSZ/YBCO, (2) Diamond/Si3N4/YSZ/YBCO, and (3) Diamond/SiO2/YSZ/YBCO. The Zr was deposited by dc sputtering on the diamond films at 450 to 820 °C. The YSZ was deposited by reactive on-axis rf sputtering at 680 to 750 °C. The Si3N4 and SiO2 were also deposited by on-axis rf sputtering at 400 to 700 °C. YBCO films were grown on the buffer layers by off-axis rf sputtering at substrate temperatures between 690 °C and 750 °C. In all cases, the as-deposited YBCO films were superconducting above 77 K. This demonstration enables the fabrication of low heat capacity, fast response time bolometric IR detectors and paves the way for the use of HTSC on diamond for interconnect layers in multichip modules.

The effects of Ta2O5–ZnO films as cathodic buffer layers in inverted polymer solar cells

2014 ◽  
Vol 2 (24) ◽  
pp. 9361-9370 ◽  
Author(s):  
Jo-Lin Lan ◽  
Sheng-Jye Cherng ◽  
Yi-Hsun Yang ◽  
Qifeng Zhang ◽  
Selvam Subramaniyan ◽  
...  
Keyword(s):  
Solar Cells ◽  
Polymer Solar Cells ◽  
Sol Gel ◽  
Composite Films ◽  
Buffer Layers ◽  
Zno Films ◽  
Varied Composition ◽  
Gel Processing ◽  
Inverted Polymer Solar Cells ◽  
Excellent Stability

Ta2O5–ZnO composite films with varied composition were fabricated by sol–gel processing and applied as cathodic buffer layers (CBLs) for inverted polymer solar cells, and demonstrated enhanced power conversion efficiency with excellent stability.

A Molecular Route to Dip-coated Transition Metal Nitride Thin Films.

2004 ◽  
Vol 848 ◽  
Author(s):  
Andrew W. Jackson ◽  
Andrew L. Hector
Keyword(s):  
Thin Films ◽  
Transition Metal ◽  
Spin Coating ◽  
Sol Gel ◽  
Particle Growth ◽  
Dip Coating ◽  
Stable Emulsion ◽  
Transition Metal Nitride ◽  
Sol Gel Synthesis ◽  
Gel Processing

ABSTRACTThere is an increasing interest in sol-gel synthesis of nitrides. The ability to deposit films of these materials by dip- or spin-coating will increase the range of applications in which they are viable and is an important step toward general sol-gel processing of nitride materials.With transition metals, the ammono based analogue of the well established alkoxy route to gels is inherently difficult to control. Due to the basicity of the system, the overwhelming tendency is of the starting materials to favour particle growth which results in a precipitate rather than a stable emulsion, unless both environment and synthetic pathway are carefully controlled. Hence reports to date of sol-gel routes to nitrides describe production of powders. We report work on a sol-gel route to titanium nitride with the ammonolysis of titanium amides controlled by temperature and chemical moderators, resulting in stable emulsions useful for dip-coating.

Microstructure and texture evolution of CeO2 buffer layers prepared via dip-coating sol–gel method on IBAD-YSZ/Hastelloy substrates

2007 ◽  
Vol 463-465 ◽  
pp. 580-583 ◽  
Author(s):  
P. Du ◽  
S.S. Wang ◽  
H. Chen ◽  
Z. Wang ◽  
J.C. Sun ◽  
...  
Keyword(s):  
Texture Evolution ◽  
Sol Gel ◽  
Dip Coating ◽  
Buffer Layers ◽  
Gel Method ◽  
Sol Gel Method

Synthesis and Dielectric Properties of SrBi2Nb2O9 Layered Perovskite by Sol-Gel Processing

1998 ◽  
Vol 541 ◽  
Author(s):  
Y. Wu ◽  
F. S. Ohuchi ◽  
G. Z. Cao
Keyword(s):  
Heat Treatment ◽  
Sol Gel ◽  
Dip Coating ◽  
Dielectric Constants ◽  
Layered Perovskite ◽  
Condensation Process ◽  
Complexing Agent ◽  
Low Dielectric ◽  
Gel Processing ◽  
Multiple Step

AbstractFerroelectric layered perovskite strontium bismuth niobium oxide SrBi2Nb2O9(SBN) ceramics and films were made by sol-gel processing. A multiple step hydrolysis-condensation process was applied to the synthesis of the SBN sol by using inorganic salts as precursors with citric acid as a complexing agent. Single phase polycrystalline SBN was obtained after heat-treatment at 650°C. It was found that the dielectric constants of SBN ceramics were dependent on heat-treatment. SEM, XPS, TGA/DTA and XRD analyses indicated that bismuth-deficiency may contribute to the relatively low dielectric constants. While a prolonged firing time at high temperatures may lead to a lattice expansion resulting in a significant decrease of the dielectric constant. C-oriented SBN films were obtained by dip-coating onto SrTiO3 substrates and the films are dense and crack-free with a thickness of 900 nm.

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