Magnetoresistance of La0.67Ca0.33MnO3 films the coherent growth of which is disturbed by mechanical stress relaxation

2011 ◽  
Vol 56 (5) ◽  
pp. 708-712
Author(s):  
Yu. A. Boikov ◽  
M. P. Volkov ◽  
V. A. Danilov
1996 ◽  
Vol 436 ◽  
Author(s):  
J. P. Lokker ◽  
J. F. Jongste ◽  
G. C. A. M. Janssen ◽  
S. Radelaar

AbstractMechanical stress and its relaxation in aluminum metallization in integrated circuits (IC) are a major concern for the reliability of the material. It is known that adding Cu improves the reliability but complicates plasma etching and increases corrosion sensitivity. The mechanical behavior of AlVPd, AlCu and Al blanket films is investigated by wafer curvature measurements. During thermal cycling between 50°C and 400°C the highest tensile stress is found in AlVPd. In a subsequent experiment, the cooling was interrupted at several temperatures to investigate the stress behavior during an eight hour isothermal treatment. Isothermal stress relaxation has been observed in the three types of films and is discussed.


1993 ◽  
Vol 33 (11-12) ◽  
pp. 1841-1844 ◽  
Author(s):  
G.L. Baldini ◽  
A. Scorzoni ◽  
F. Tamarri

1991 ◽  
Vol 64 (2) ◽  
pp. 89-93 ◽  
Author(s):  
T. F. Nonnenmacher ◽  
W. G. Glöckle

1978 ◽  
Vol 34 (3) ◽  
pp. T99-T105
Author(s):  
Masayoshi Hagiwara ◽  
Keizo Miyasaka ◽  
Kinzo Ishikawa

1998 ◽  
Vol 516 ◽  
Author(s):  
Herbert F. Roloff ◽  
Johannes Fellinger

AbstractFuture semiconductor technologies with structural dimensions less than 0.35 µm and four or more metallization layers impede the realization of the reliability requirements due to their complexity and increasing operating conditions (>5 mA/µm2). Therefore it is necessary to provide reliability appraisal methods which ensure the operation lifetimes (up to 30 years) required by the market.


2015 ◽  
Vol 35 (10) ◽  
pp. 767-768
Author(s):  
O. P. Reshetnikova ◽  
A. N. Vasin ◽  
B. M. Iznairov ◽  
A. V. Korolev ◽  
K. S. Neigebauer

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