Formation of pores in thermal SiO2 due to internal mechanical stress relaxation

1989 ◽  
Vol 116 (2) ◽  
pp. 615-620 ◽  
Author(s):  
S. A. Litvinenko ◽  
V. I. Sokolov
Keyword(s):  
Stress Relaxation ◽  
Mechanical Stress ◽  
Internal Mechanical Stress

Isothermal Stress Relaxation in Al, Alcu and A1vpd Films

1996 ◽  
Vol 436 ◽  
Author(s):  
J. P. Lokker ◽  
J. F. Jongste ◽  
G. C. A. M. Janssen ◽  
S. Radelaar
Keyword(s):  
Stress Relaxation ◽  
Integrated Circuits ◽  
Tensile Stress ◽  
Thermal Cycling ◽  
Mechanical Behavior ◽  
Mechanical Stress ◽  
Plasma Etching ◽  
Isothermal Treatment ◽  
Aluminum Metallization ◽  
Curvature Measurements

AbstractMechanical stress and its relaxation in aluminum metallization in integrated circuits (IC) are a major concern for the reliability of the material. It is known that adding Cu improves the reliability but complicates plasma etching and increases corrosion sensitivity. The mechanical behavior of AlVPd, AlCu and Al blanket films is investigated by wafer curvature measurements. During thermal cycling between 50°C and 400°C the highest tensile stress is found in AlVPd. In a subsequent experiment, the cooling was interrupted at several temperatures to investigate the stress behavior during an eight hour isothermal treatment. Isothermal stress relaxation has been observed in the three types of films and is discussed.

Resistance decay after electromigration as the effect of mechanical stress relaxation

1993 ◽  
Vol 33 (11-12) ◽  
pp. 1841-1844 ◽  
Author(s):  
G.L. Baldini ◽  
A. Scorzoni ◽  
F. Tamarri
Keyword(s):  
Stress Relaxation ◽  
Mechanical Stress

A fractional model for mechanical stress relaxation

1991 ◽  
Vol 64 (2) ◽  
pp. 89-93 ◽  
Author(s):  
T. F. Nonnenmacher ◽  
W. G. Glöckle
Keyword(s):  
Stress Relaxation ◽  
Mechanical Stress ◽  
Fractional Model

scholarly journals THE EFFECT OF WATER ON THE MECHANICAL STRESS RELAXATION OF SILK FIBER

1978 ◽  
Vol 34 (3) ◽  
pp. T99-T105
Author(s):  
Masayoshi Hagiwara ◽  
Keizo Miyasaka ◽  
Kinzo Ishikawa
Keyword(s):  
Stress Relaxation ◽  
Mechanical Stress ◽  
Silk Fiber ◽  
Effect Of Water

Model for Estimation of Metallization Lifetime Including Electromigration and Thermo-Mechanical Stress Relaxation

1998 ◽  
Vol 516 ◽  
Author(s):  
Herbert F. Roloff ◽  
Johannes Fellinger
Keyword(s):  
Stress Relaxation ◽  
Mechanical Stress ◽  
Operating Conditions ◽  
Structural Dimensions

AbstractFuture semiconductor technologies with structural dimensions less than 0.35 µm and four or more metallization layers impede the realization of the reliability requirements due to their complexity and increasing operating conditions (>5 mA/µm2). Therefore it is necessary to provide reliability appraisal methods which ensure the operation lifetimes (up to 30 years) required by the market.

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