Crystallization of amorphous silicon films by rapid thermal annealing for heterojunction photovoltaic solar cells

2014 ◽  
Vol 92 (7/8) ◽  
pp. 896-901 ◽  
Author(s):  
C. Baldus-Jeursen ◽  
R. Tarighat ◽  
E. Fathi ◽  
S. Sivoththaman
Keyword(s):  
Solar Cells ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Crystalline Silicon ◽  
Silicon Substrates ◽  
Solar Simulator ◽  
Heterojunction Solar Cells ◽  
Silicon Thin Films ◽  
Photovoltaic Solar Cells ◽  
Low Thermal Budget

Low thermal budget rapid thermal annealing is a promising method of forming highly crystalline silicon thin films on silicon substrates for heterojunction solar cells. In this work, the extent of crystallization was examined by Raman and ultraviolet reflectance spectroscopy, and ellipsometry was used to derive film optical properties. Solar cells were fabricated and analyzed using dark and illuminated current–voltage characteristics, external quantum efficiency, and solar simulator measurements with device efficiency approaching 14%.

scholarly journals Effect of the Phosphorus Gettering on Si Heterojunction Solar Cells

2012 ◽  
Vol 2012 ◽  
pp. 1-7 ◽  
Author(s):  
Hyomin Park ◽  
Sung Ju Tark ◽  
Chan Seok Kim ◽  
Sungeun Park ◽  
Young Do Kim ◽  
...  
Keyword(s):  
Solar Cells ◽  
Current Density ◽  
Crystalline Silicon ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Solar Simulator ◽  
Heterojunction Solar Cells ◽  
Crystalline Silicon Solar Cells

To improve the efficiency of crystalline silicon solar cells, should be collected the excess carrier as much as possible. Therefore, minimizing the recombination both at the bulk and surface regions is important. Impurities make recombination sites and they are the major reason for recombination. Phosphorus (P) gettering was introduced to reduce metal impurities in the bulk region of Si wafers and then to improve the efficiency of Si heterojunction solar cells fabricated on the wafers. Resistivity of wafers was measured by a four-point probe method. Fill factor of solar cells was measured by a solar simulator. Saturation current and ideality factor were calculated from a dark current density-voltage graph. External quantum efficiency was analyzed to assess the effect of P gettering on the performance of solar cells. Minority bulk lifetime measured by microwave photoconductance decay increases from 368.3 to 660.8 μs. Open-circuit voltage and short-circuit current density increase from 577 to 598 mV and 27.8 to 29.8 mA/cm2, respectively. The efficiency of solar cells increases from 11.9 to 13.4%. P gettering will be feasible to improve the efficiency of Si heterojunction solar cells fabricated on P-doped Si wafers.

Diffusion and Activation During Rapid Thermal Annealing of Implanted Boron in Silicon

1985 ◽  
Vol 52 ◽  
Author(s):  
N E B Cowern ◽  
K J Yallup ◽  
D J Godfrey ◽  
D G Hasko ◽  
R A McMahon ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Crystalline Silicon ◽  
Numerical Models ◽  
Analytical Techniques ◽  
Silicon Substrates ◽  
Extended Defect ◽  
Diffusion Enhancement ◽  
High Doses ◽  
Concentration Dependent Diffusivity

ABSTRACTThe diffusion and activation of implanted boron in silicon during rapid thermal annealing (RTA) has been studied using the analytical techniques of SIMS, TEM, and sheet resistance measurements. Both crystalline and pre-amorphised silicon substrates were investigated. Data analysis in conjunction with a range of numerical models indicates some novel features of boron RTA, as well as accounting for previously observed features. In particular, a large transient diffusion enhancement coupled with an increase of electrical activity, are seen at short anneal times, in the case of crystalline silicon substrates. A non-equilibrium diffusion enhancement of a different type is also seen at much longer times, in both crystalline and pre-amorphised samples implanted to high doses. This second enhancement persists after all the precipitated boron formed on implantation has become substitutional. TEM studies show that the transient enhancement may be associated with the evolution of extended defect structures during the early stages of annealing. Both types of enhancement can be well represented by multiplying the ‘normal’ concentration-dependent diffusivity (with β=0.5) by a factor f>1.

Optimisation of amorphous and polymorphous thin silicon layers for the formation of the front-side of heterojunction solar cells on p-type crystalline silicon substrates

2006 ◽  
Vol 511-512 ◽  
pp. 543-547 ◽  
Author(s):  
Y. Veschetti ◽  
J.-C. Muller ◽  
J. Damon-Lacoste ◽  
P. Roca i Cabarrocas ◽  
A.S. Gudovskikh ◽  
...  
Keyword(s):  
Solar Cells ◽  
Crystalline Silicon ◽  
Silicon Substrates ◽  
Front Side ◽  
Heterojunction Solar Cells ◽  
Thin Silicon ◽  
P Type

Single heterojunction solar cells on exfoliated flexible ∼25 μm thick mono-crystalline silicon substrates

2013 ◽  
Vol 102 (16) ◽  
pp. 163904 ◽  
Author(s):  
Sayan Saha ◽  
Mohamed M. Hilali ◽  
Emmanuel U. Onyegam ◽  
Dabraj Sarkar ◽  
Dharmesh Jawarani ◽  
...  
Keyword(s):  
Solar Cells ◽  
Crystalline Silicon ◽  
Silicon Substrates ◽  
Heterojunction Solar Cells

INVESTIGATION OF NEAR-SURFACE DEFECTS INDUCED BY SPIKE RAPID THERMAL ANNEALING IN c-SILICON SOLAR CELLS

2016 ◽  
Vol 23 (02) ◽  
pp. 1550107
Author(s):  
GUODONG LIU ◽  
PAN REN ◽  
DAYONG ZHANG ◽  
WEIPING WANG ◽  
JIANFENG LI
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Surface Defects ◽  
Crystalline Silicon ◽  
Defect Density ◽  
Near Surface ◽  
Si Solar Cell ◽  
Dislocation Defects

The defects induced by a spike rapid thermal annealing (RTA) process in crystalline silicon (c-Si) solar cells were investigated by the photoluminescence (PL) technique and the transmission electron microscopy (TEM), respectively. Dislocation defects were found to form in the near-surface junction region of the monocrystalline Si solar cell after a spike RTA process was performed at 1100[Formula: see text]C. Photo J–V characteristics were measured on the Si solar cell before and after the spike RTA treatments to reveal the effects of defects on the Si cell performances. In addition, the Silvaco device simulation program was used to study the effects of defects density on the cell performances by fitting the experimental data of RTA-treated cells. The results demonstrate that there was an obvious degradation in the Si solar cell performances when the defect density after the spike RTA treatment was above [Formula: see text][Formula: see text]cm[Formula: see text].

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