Two OPW calculations of electronic transport properties of copper below 20 K

1977 ◽  
Vol 55 (6) ◽  
pp. 521-527 ◽  
Author(s):  
M. E. Brett ◽  
J. E. Black
Keyword(s):  
Fermi Surface ◽  
Electronic Transport ◽  
Phonon Scattering ◽  
Electronic States ◽  
Preliminary Calculation ◽  
First Case ◽  
Cone Model ◽  
The Matrix ◽  
Total Resistivity ◽  
Electron Phonon Scattering

The results of numerical calculations of the electrical and thermal lattice resistivity of copper at temperatures (T) below 20 K are presented. We have calculated the matrix element for electron–phonon scattering using two OPW electronic states and the Born – von Karman method of determining the phonon frequencies and eigenvectors. We have used the eight-cone model of the Fermi surface in which necks intersecting the Brillouin zone and the spherical belly regions are both present.The lattice electrical resistivity is calculated for two limiting cases. In the first case the resistivity is that expected when no impurities are present in the metal. In the second case the impurity resistivity is taken to dominate the lattice resistivity. We show that the T3 behaviour of lattice resistivity recently observed experimentally below 10 K can be understood as occurring when the temperature is lowered and the total resistivity moves from the lattice dominated to impurity dominated case.The results of a preliminary calculation, in which a more exact Fermi surface and 27 APW electronic states were used, are also described.

Electronic transport in molecular devices: the role of coherent and incoherent electron–phonon scattering

2004 ◽  
Vol 19 (4) ◽  
pp. S357-S361 ◽  
Author(s):  
P Lugli ◽  
A Pecchia ◽  
M Gheorghe ◽  
L Latessa ◽  
A Di Carlo
Keyword(s):  
Electronic Transport ◽  
Phonon Scattering ◽  
Molecular Devices ◽  
Electron Phonon Scattering

ELECTRON–PHONON SCATTERING AND ELECTRONIC TRANSPORT IN LAYERED STRUCTURES

2000 ◽  
Vol 14 (01) ◽  
pp. 85-90
Author(s):  
M. AUSLOOS ◽  
K. DURCZEWSKI
Keyword(s):  
Electronic Transport ◽  
Phonon Scattering ◽  
Electrical Power ◽  
Electron Gas ◽  
Three Dimensional ◽  
Layered Materials ◽  
Normal Phase ◽  
Phase Temperature ◽  
Electron Phonon Scattering ◽  
Degenerate Electron Gas

The two-dimensional degenerate electron gas with electron–phonon scattering is analyzed. The normal-phase temperature dependence of the electrical resistivity and the thermo-electrical power are calculated, based on the electron–phonon scattering and other usual ones. Results are compared to those of earlier studies on three-dimensional phonon-limited scattering. Comparison is qualitatively made for several layered materials of interest (MOS, heterostructures, etc.). It occurs that the theory does not seem to apply to YBCO-like Tc superconductors which have a too low Fermi energy with respect to the Debye temperature.

A calculation of the electron–electron scattering contribution to the electrical resistivity of copper

1978 ◽  
Vol 56 (6) ◽  
pp. 708-714 ◽  
Author(s):  
J. E. Black
Keyword(s):  
Experimental Data ◽  
Electrical Resistivity ◽  
Plane Wave ◽  
Fermi Surface ◽  
Electron Scattering ◽  
Noble Metals ◽  
Electronic States ◽  
Cone Model ◽  
Wave States ◽  
Scattering Contribution

The contribution of electron–electron scattering to the electrical resistivity of copper has been calculated. Parts of the Fermi surface on which the initial and final electronic states contribute most heavily to the resistivity have also been determined. The calculations are based on two plane-wave states for the electrons and a Thomas–Fermi screened Coulomb interaction between electrons. The Fermi surface is approximated with the eight-cone model used in noble metals. The results of the calculations are presented here and compared with calculations and experimental data of other authors.

Electron–Phonon Scattering Times for Aluminum

1974 ◽  
Vol 52 (7) ◽  
pp. 618-623 ◽  
Author(s):  
P. T. Truant ◽  
J. P. Carbotte
Keyword(s):  
Fermi Surface ◽  
Phonon Spectrum ◽  
Phonon Scattering ◽  
Pure Aluminum ◽  
Phonon Interaction ◽  
Electron Phonon Interaction ◽  
Electron Phonon Scattering

The electron–phonon scattering times in pure aluminum vary with position on the Fermi surface. There are several sources of this anisotropy. Perhaps the most obvious, but not necessarily the most important, is the distortions of the Fermi surface from a sphere. Another results from the anisotropy in the electron–phonon interaction and in the phonon spectrum. We have calculated the effect on the electron–phonon scattering times of this latter source of anisotropy. We find large variations over the Fermi surface. As the temperature is increased the anisotropy reduces but it is still significant even above 100 K.

Anisotropy of the electron-phonon scattering rate on the Fermi surface of indium

1976 ◽  
Vol 6 (5) ◽  
pp. L141-L146 ◽  
Author(s):  
A B M Hoff ◽  
D G de Groot ◽  
D L Randles
Keyword(s):  
Fermi Surface ◽  
Phonon Scattering ◽  
Scattering Rate ◽  
Electron Phonon Scattering

A Theoretical study of the Thermoelectric Transport Coefficients of n-type PbTe

2014 ◽  
Vol 1661 ◽  
Author(s):  
Jawaher Al-Otaibi ◽  
Gyaneshwar P. Srivastava
Keyword(s):  
Electronic Transport ◽  
Continuum Model ◽  
Theoretical Study ◽  
Phonon Scattering ◽  
Transport Coefficients ◽  
Single Mode ◽  
Phonon Modes ◽  
Anharmonic Interactions ◽  
Electron Phonon Scattering

ABSTRACTIn this work we present a theoretical study of the transport coefficients of n-type PbTe. The electronic transport coefficients are calculated using the isotropic-nearly-free-electron approximation, including the effect of band non-parabolicity on electron-phonon scattering. The lattice thermal transport coefficient is computed by employing the isotropic continuum model for the dispersion relation for acoustic as well as optical phonon branches, an isotropic anharmonic continuum model for crystal anharmonicity, and the single-mode relaxation time scheme. The role of transverse optical (TO) phonon modes in anharmonic interactions will be discussed in detail.

TEMPERATURE DEPENDENCE BEHAVIOR OF ELECTRICAL RESISTIVITY IN NOBLE METALS AT LOW TEMPERATURES

2014 ◽  
Vol 5 (3) ◽  
pp. 982-992 ◽  
Author(s):  
M AL-Jalali
Keyword(s):  
Experimental Data ◽  
Electrical Resistivity ◽  
Temperature Dependence ◽  
Concentration Dependence ◽  
Low Temperatures ◽  
Noble Metals ◽  
Phonon Scattering ◽  
Theoretical Models ◽  
Residual Resistivity ◽  
Electron Phonon Scattering

Resistivity temperature – dependence and residual resistivity concentration-dependence in pure noble metals(Cu, Ag, Au) have been studied at low temperatures. Dominations of electron – dislocation and impurity, electron-electron, and electron-phonon scattering were analyzed, contribution of these mechanisms to resistivity were discussed, taking into consideration existing theoretical models and available experimental data, where some new results and ideas were investigated.

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