The temperature dependence of the electrical conductivity and switching phenomena in Cu2O single crystals

1982 ◽  
Vol 60 (11) ◽  
pp. 1648-1655 ◽  
Author(s):  
G. J. Wang ◽  
F. L. Weichman
Keyword(s):  
Electrical Conductivity ◽  
Temperature Dependence ◽  
Single Crystals ◽  
Electric Fields ◽  
Optical Transmission ◽  
Current Voltage ◽  
High Electric Fields ◽  
Optically Induced

Optical transmission work had shown that three distinct types of Cu2O single crystals could be created by means of different annealing processes. We have now made mobility measurements and a series of current–voltage measurements over the ambient to 200 °C range. All types of crystals were subject to breakdown at sufficiently high electric fields and temperatures in accordance with a previously known mechanism. Two new switching effeets, one of which is optically induced, are shown to exist in the highest resistivity material.

Space Charge Limited Current in A-Si:H Devices Using High Electric Fields

1989 ◽  
Vol 149 ◽  
Author(s):  
J. C. Van Den Heuvel ◽  
R. C. Van Oort ◽  
B. Bokhorst ◽  
M. J. Geerts
Keyword(s):  
Space Charge ◽  
Electric Fields ◽  
Characteristic Temperature ◽  
Space Charge Limited Current ◽  
Limited Current ◽  
Current Voltage ◽  
Frenkel Emission ◽  
High Electric Fields ◽  
Gap States ◽  
Space Charge Limited

ABSTRACTSpace Charge Limited Current (SCLC) measurements are used to obtain the density of gap states of intrinsic a-Si:H. If an electron is trapped by a positively charged defect, then the electron can be released by a high electric field which disturbs the SCLC measurement. A correction for this effect, which is called Poole-Frenkel emission, in SCLC measurements is derived and used to analyze current-voltage measurements performed on n-i-n a-Si:H devices. It is shown that the Poole-Frenkel emission is absent, and that this is in accordance with the contemporary models for the gap states in a-Si:H.We also studied the characteristic temperature which is based on the concept that the distribution of gap states is exponential, and concluded that this distribution is not exponential.

Comparison of Current-Voltage Characteristics of Bulk Polyaniline and Nano Dimensional Polyaniline Particles in Nanoporous Dielectric Matrix of MIL-101

2013 ◽  
Vol 711 ◽  
pp. 8-13
Author(s):  
A.I. Romanenko ◽  
K.M. Limaev ◽  
D.N. Dybtsev ◽  
V.P. Fedin ◽  
S.B. Aliev ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Temperature Dependence ◽  
Model Fit ◽  
Tunneling Model ◽  
Dielectric Matrix ◽  
Current Voltage ◽  
Current Voltage Characteristics

We investigated current-voltage (I-V) characteristics of bulk polyaniline and aniline polymerized inside nanopores of chromium terephthalate dielectric matrix MIL-101. The temperature dependence of electrical conductivity σ (T) of these materials are described by the fluctuation-induced tunneling model (FIT), which means that the main contribution to a net conductivity is caused by contacts between particles of the polyaniline. The comparison of I-V for these two types of materials shown that I-V characteristics of bulk polyaniline are described by the quasi-1D VRH model while for aniline polymerized inside nanopores of chromium terephthalate dielectric matrix MIL-101 by extended FIT model.

High Mobilities in Organic Molecular Crystals

1999 ◽  
Vol 598 ◽  
Author(s):  
Jan Hendrik Schön ◽  
Steffen Berg ◽  
Christian Kloc ◽  
Bertram Batlogg
Keyword(s):  
Single Crystals ◽  
Electric Fields ◽  
Phonon Scattering ◽  
Effective Bandwidth ◽  
Hot Carrier ◽  
Organic Molecular Crystals ◽  
Electric Field Dependence ◽  
Hot Carrier Effects ◽  
High Electric Fields ◽  
Molecular Semiconductors

ABSTRACTThe charge transport in high quality single crystals of various organic molecular semiconductors is investigated. Band-like motion in delocalized states is observed in various polyacene and oligothiophene single crystals. The electric field dependence of the mobility is ascribed to acoustic phonon scattering. Furthermore, hot carrier effects can be observed at low temperatures and high electric fields. Band-like transport changes over to hopping motion when the effective bandwidth shrinks, i.e. at high temperatures or in crystallographic directions of small molecular orbital overlap.

Sign in / Sign up

Export Citation Format

Share Document