scholarly journals Temperature dependence of ultrasharp luminescence lines in AlyIn1−yAs/AlxGa1−xAs self-assembled quantum dots

1996 ◽  
Vol 74 (S1) ◽  
pp. 216-219 ◽  
Author(s):  
S. Raymond ◽  
S. Fafard ◽  
S. Charbonneau

Ensembles of~600 AlyIn1−yAs/AlxGa1−xAs self-assembled quantum dots (QDs) are investigated using photoluminescence (PL) and time-resolved PL in the visible. At very low excitation intensities, the PL spectrum shows multiple ultranarrow luminescence lines (FWHM ~200 μeV), which are attributed to the ground-state transition of a few dots (4 or less). The temperature and intensity evolution of these sharp lines is then monitored. The temperature-dependent measurements show that the line width and lifetime of the narrow lines remain constant up to the onset of thermionic, emission. Intensity-dependent measurements show that for high excitation density the collective background, emitted by the ensemble of QDs, is enhanced relative to the amplitude of individual ultranarrow lines.

2002 ◽  
Vol 737 ◽  
Author(s):  
T. A. Nguyen ◽  
S. Mackowski ◽  
H. Rho ◽  
H. E. Jackson ◽  
L. M. Smith ◽  
...  

ABSTRACTWe show that two major carrier excitation mechanisms are present in II-VI self-assembled quantum dots. The first one is related to direct excited state – ground state transition. It manifests itself by the presence of sharp and intense lines in the excitation spectrum measured from single quantum dots. Apart from these lines, we also observe up to four much broader excitation lines. The energy spacing between these lines indicates that they are associated with absorption related to longitudinal optical phonons. By analyzing resonantly excited photoluminescence spectra, we are able to separate the contributions from these two mechanisms. In the case of CdTe dots, the excited state – ground state relaxation is important for all dots in ensemble, while phonon-assisted processes are dominant for the dots with smaller lateral size.


1999 ◽  
Vol 583 ◽  
Author(s):  
M. Geddol ◽  
R. Ferrinm ◽  
G. Guizzetti ◽  
M. Patrini ◽  
S. Franchi ◽  
...  

AbstractPhotoreflectance measurements have been performed in the 0.8–1.5 eV photon energy range and at temperatures from 80 to 300 K on stacked layers of InAs/GaAs self-assembled quantum dots (QDs) grown by Atomic-Layer Molecular Beam Epitaxy. The spectral features due to the QD optical response were analyzed by using lineshape models characteristic of modulation spectroscopy of confined systems. The dependence of the ground state transition energy on the number of stacked QD layers is investigated and it is shown that Coulomb interaction can account for the observed different behavior of the ensemble optical response of QD families characterized by different morphologies and coexisting in the same sample.


1999 ◽  
Vol 38 (Part 1, No. 1B) ◽  
pp. 554-557 ◽  
Author(s):  
Wen-Hao Chang ◽  
Tzu-Min Hsu ◽  
Kuei-Fen Tsai ◽  
Tzer-En Nee ◽  
Jen-Inn Chyi ◽  
...  

2020 ◽  
Vol 62 (11) ◽  
pp. 1816
Author(s):  
С.В. Некрасов ◽  
Ю.Г. Кусраев ◽  
И.А. Акимов ◽  
L. Langer ◽  
M. Kotur ◽  
...  

The dynamics of the photoluminescence negative circular polarization of the InP/(In,Ga)P quantum dots ensemble was studied. We find that in the time-resolved dependences of the polarization there are no oscillations in Voigt magnetic field. Also, with increasing field the polarization declines to zero. Such behavior is attributed to the peculiarities of the negatively charged exciton spin dynamics, particularly, to the fact that in the negatively charged exciton ground state the spin dynamics is governed by the heavy hole. We show that magnetic field depolarization of the photoluminescence occurs once the field of dynamically polarized nuclear spins acting on electron spins is surpassed.


1999 ◽  
Vol 75 (2) ◽  
pp. 214-216 ◽  
Author(s):  
J. C. Kim ◽  
H. Rho ◽  
L. M. Smith ◽  
Howard E. Jackson ◽  
S. Lee ◽  
...  

1996 ◽  
Vol 54 (16) ◽  
pp. 11548-11554 ◽  
Author(s):  
S. Raymond ◽  
S. Fafard ◽  
P. J. Poole ◽  
A. Wojs ◽  
P. Hawrylak ◽  
...  

2003 ◽  
Vol 68 (7) ◽  
Author(s):  
Y. H. Zhang ◽  
A. S. Plaut ◽  
J. Weis ◽  
J. P. Harbison ◽  
L. T. Florez ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document