Direct observation of the non-supported metal nanoparticle electron density of states by X-ray photoelectron spectroscopy

2007 ◽  
Vol 45 (2) ◽  
pp. 295-299 ◽  
Author(s):  
M. Tchaplyguine ◽  
S. Peredkov ◽  
A. Rosso ◽  
J. Schulz ◽  
G. Öhrwall ◽  
...  
1970 ◽  
Vol 8 (15) ◽  
pp. 1245-1248 ◽  
Author(s):  
S.B.M. Hagström ◽  
P.O. Hedén ◽  
H. Löfgren

2015 ◽  
Vol 119 (4) ◽  
pp. 2063-2072 ◽  
Author(s):  
Wesley T. Hong ◽  
Kelsey A. Stoerzinger ◽  
Brian Moritz ◽  
Thomas P. Devereaux ◽  
Wanli Yang ◽  
...  

1990 ◽  
Vol 209 ◽  
Author(s):  
Yoshihisa Fujisaki ◽  
Sumiko Sakai ◽  
Saburo Ataka ◽  
Kenji Shibata

ABSTRACTHigh quality GaAs/SiO2 MIS( Metal Insulator Semiconductor ) diodes were fabricated using (NH4)2S treatment and photo-assisted CVD( Chemical Vapor Deposition ). The density of states at the GaAs and SiO2 interface is the order of 1011 cm-2eV-1 throughout the forbidden energy range, which is smaller by the order of two than that of the MIS devices made by the conventional CVD process. The mechanism attributable to the interface improvement was investigated through XPS( X-ray Photoelectron Spectroscopy ) analyses.


2005 ◽  
Vol 123 (22) ◽  
pp. 221102 ◽  
Author(s):  
Oleg Kostko ◽  
Gert Wrigge ◽  
Ori Cheshnovsky ◽  
Bernd v. Issendorff

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