Calculation of Modal Gain for Terahertz Lasers Based on HgCdTe Heterostructures with Quantum Wells

2017 ◽  
Author(s):  
Alexander A. Dubinov ◽  
Vladimir Ya. Aleshkin
Keyword(s):  
Quantum Wells ◽  
Modal Gain ◽  
Terahertz Lasers

Calculation of Modal Gain for Terahertz Lasers Based on HgCdTe Heterostructures with Quantum Wells

2016 ◽  
Vol 25 (03n04) ◽  
pp. 1640018 ◽  
Author(s):  
Alexander A. Dubinov ◽  
Vladimir Ya. Aleshkin
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Heavy Hole ◽  
Light Hole ◽  
Modal Gain ◽  
Terahertz Lasers

In this work we calculate and analyze modal gain for terahertz lasers based on HgCdTe heterostructures with quantum wells (QWs) taking into account the symmetry-enforced light hole-heavy hole mixing at the quantum well interfaces. We have found that modal gain for a structure with 5 HgTe QWs of the 5.2 nm width can be 33 cm−1 at 9 THz.

scholarly journals Intersubband terahertz lasers using four-level asymmetric quantum wells

1999 ◽  
Vol 85 (1) ◽  
pp. 23-28 ◽  
Author(s):  
P. Kinsler ◽  
P. Harrison ◽  
R. W. Kelsall
Keyword(s):  
Quantum Wells ◽  
Asymmetric Quantum ◽  
Terahertz Lasers

Optical modal gain in multiple quantum-well semiconductor lasers based on InP

2006 ◽  
Vol 84 (1) ◽  
pp. 53-66 ◽  
Author(s):  
M S Wartak ◽  
P Weetman ◽  
T Alajoki ◽  
J Aikio ◽  
V Heikkinen ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Semiconductor Lasers ◽  
Carrier Transport ◽  
Multiple Quantum Well ◽  
Optical Gain ◽  
Rate Equations ◽  
Multiple Quantum ◽  
Electrostatic Effects ◽  
Modal Gain

An approach to determine the optical modal gain spectra in multiple quantum-well semiconductor lasers based on InP in terms of the current at electrodes is presented. The link between the current at the electrodes and the density of carriers inside each quantum well was provided by rate equations with the inclusion of carrier transport effects. Description of hole dispersion is based on a 4 × 4 Luttinger–Kohn Hamiltonian and was done with the electrostatic effects of the carrier charges. Electrostatic effects were included via a self-consistent solution of electron and hole wave equations and the Poisson equation. The optical gain for the TE (transverse electric) mode has been determined with the inclusion of non-Markovian effects, Coulombic enhancement, and band-gap renormalization. The theoretical approach was compared with experimental measurements of the optical gain on a laser structure consisting of four quantum wells using the Hakki–Paoli method. The important role played by the leakage current was revealed when the results were compared. PACS No.: 73.63.Hs, 78.20.Bh, 78.20.Ci

scholarly journals Оптическое усиление в лазерных гетероструктурах с активной областью на основе короткопериодной сверхрешетки InGaAs/InGaAlAs

2019 ◽  
Vol 127 (12) ◽  
pp. 963 ◽  
Author(s):  
Л.Я. Карачинский ◽  
И.И. Новиков ◽  
А.В. Бабичев ◽  
А.Г. Гладышев ◽  
Е.С. Колодезный ◽  
...  
Keyword(s):  
Active Region ◽  
Quantum Wells ◽  
Spectral Range ◽  
Current Density ◽  
Laser Diodes ◽  
Pump Current ◽  
Modal Gain

An active region design based on the InGaAs/InGaAlAs superlattice for laser diodes of 1535-1565 nm spectral range was proposed and experimentally realized. It has been shown that the use of active region design based on superlattice allows increasing the modal gain at equal values of the pump current density in comparison with a common used active-region design based on a set of InGaAs quantum wells.

Polarization Control of Optically Pumped Terahertz Lasers

2013 ◽  
Vol 1617 ◽  
pp. 199-204
Author(s):  
Gabriela Slavcheva ◽  
Alexey V. Kavokin
Keyword(s):  
Quantum Wells ◽  
Optical Transition ◽  
Exciton State ◽  
Photon Absorption ◽  
Threshold Power ◽  
Two Photon Absorption ◽  
Two Photon ◽  
Polarization Control ◽  
Photon Generation ◽  
Terahertz Lasers

ABSTRACTTwo-photon pumping of excited exciton states in semiconductor quantum wells is a tool for realization of ultra-compact terahertz (THz) lasers based on stimulated optical transition between excited 2p and ground 1s exciton state. We show that the probability of two-photon absorption by a 2p-exciton is strongly dependent on the polarization of both photons. Variation of the threshold power for THz lasing by a factor of 5 is predicted by switching from linear to circular pumping. We calculate the polarization dependence of the THz emission and identify photon polarization configurations for achieving maximum THz photon generation quantum efficiency.

Characterization of GaAs/AlGaAs quantum wells and quantum wires by chemical lattice imaging

1994 ◽  
Vol 52 ◽  
pp. 736-737
Author(s):  
A. Carlsson ◽  
J.-O. Malm ◽  
A. Gustafsson
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Quantum Wires ◽  
Vapour Phase ◽  
Quantitative Information ◽  
Lattice Imaging ◽  
Vapour Phase Epitaxy ◽  
Metalorganic Vapour Phase Epitaxy ◽  
High Resolution Images

In this study a quantum well/quantum wire (QW/QWR) structure grown on a grating of V-grooves has been characterized by a technique related to chemical lattice imaging. This technique makes it possible to extract quantitative information from high resolution images.The QW/QWR structure was grown on a GaAs substrate patterned with a grating of V-grooves. The growth rate was approximately three monolayers per second without growth interruption at the interfaces. On this substrate a barrier of nominally Al0.35 Ga0.65 As was deposited to a thickness of approximately 300 nm using metalorganic vapour phase epitaxy . On top of the Al0.35Ga0.65As barrier a 3.5 nm GaAs quantum well was deposited and to conclude the structure an additional approximate 300 nm Al0.35Ga0.65 As was deposited. The GaAs QW deposited in this manner turns out to be significantly thicker at the bottom of the grooves giving a QWR running along the grooves. During the growth of the barriers an approximately 30 nm wide Ga-rich region is formed at the bottom of the grooves giving a Ga-rich stripe extending from the bottom of each groove to the surface.

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