scholarly journals Оптическое усиление в лазерных гетероструктурах с активной областью на основе короткопериодной сверхрешетки InGaAs/InGaAlAs

2019 ◽  
Vol 127 (12) ◽  
pp. 963 ◽  
Author(s):  
Л.Я. Карачинский ◽  
И.И. Новиков ◽  
А.В. Бабичев ◽  
А.Г. Гладышев ◽  
Е.С. Колодезный ◽  
...  
Keyword(s):  
Active Region ◽  
Quantum Wells ◽  
Spectral Range ◽  
Current Density ◽  
Laser Diodes ◽  
Pump Current ◽  
Modal Gain

An active region design based on the InGaAs/InGaAlAs superlattice for laser diodes of 1535-1565 nm spectral range was proposed and experimentally realized. It has been shown that the use of active region design based on superlattice allows increasing the modal gain at equal values of the pump current density in comparison with a common used active-region design based on a set of InGaAs quantum wells.

scholarly journals AlGaInAs/InP Based Five & Three Quantum Wells Mode Locked Laser Diodes: A Comparative Study

2020 ◽  
Vol 26 (5) ◽  
pp. 22-27
Author(s):  
Jehan Akbar ◽  
Muhammad Hanif ◽  
Muhammad Azhar Naeem ◽  
Kamran Abid
Keyword(s):  
Active Region ◽  
Quantum Wells ◽  
Laser Diodes ◽  
Mode Locking ◽  
Field Pattern ◽  
Far Field ◽  
Optical Pulses ◽  
Wide Range ◽  
Mode Locked Laser ◽  
Far Field Pattern

Comparison of performance of semiconductor mode-locked laser diodes fabricated using AlGaInAs/InP material containing 5 and 3 quantum wells (QWs) inside the active region is reported. The simulations and experimental results show that lasers containing five QWs materials produce larger beam divergence and temporally broader optical pulses. For improvement in the mode-locking of lasers and reducing the far-field pattern, the number of QWs inside the active region was decreased from five to three and a far-field decreasing layer along with a thick spacer layer were introduced in the n-cladding region of epitaxial material. Before growing the material, simulations were carried out to optimise the design. The lower optical confinement factor and higher gain saturation energy of three QWs based mode-locked lasers provide higher average and peak output power, reduced and symmetric far-field pattern, better radio frequency (RF) spectra, shorter optical pulses, and stable optimal mode-locking for a wide range of gain current and saturable absorber reverse voltage.

scholarly journals Green laser diodes with low threshold current density via interface engineering of InGaN/GaN quantum well active region

2017 ◽  
Vol 25 (1) ◽  
pp. 415 ◽  
Author(s):  
Aiqin Tian ◽  
Jianping Liu ◽  
Liqun Zhang ◽  
ZengCheng Li ◽  
Masao Ikeda ◽  
...  
Keyword(s):  
Active Region ◽  
Quantum Well ◽  
Current Density ◽  
Laser Diodes ◽  
Threshold Current ◽  
Green Laser ◽  
Threshold Current Density ◽  
Interface Engineering ◽  
Low Threshold

scholarly journals Role of dislocations in nitride laser diodes with different indium content

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Agata Bojarska-Cieślińska ◽  
Łucja Marona ◽  
Julita Smalc-Koziorowska ◽  
Szymon Grzanka ◽  
Jan Weyher ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Defect Density ◽  
Laser Diodes ◽  
Diffusion Path ◽  
Vapour Phase ◽  
Indium Content ◽  
Nonradiative Recombination ◽  
Light Emitters ◽  
Vapour Phase Epitaxy

AbstractIn this work we investigate the role of threading dislocations in nitride light emitters with different indium composition. We compare the properties of laser diodes grown on the low defect density GaN substrate with their counterparts grown on sapphire substrate in the same epitaxial process. All structures were produced by metalorganic vapour phase epitaxy and emit light in the range 383–477 nm. We observe that intensity of electroluminescence is strong in the whole spectral region for devices grown on GaN, but decreases rapidly for the devices on sapphire and emitting at wavelength shorter than 420 nm. We interpret this behaviour in terms of increasing importance of dislocation related nonradiative recombination for low indium content structures. Our studies show that edge dislocations are the main source of nonradiative recombination. We observe that long wavelength emitting structures are characterized by higher average light intensity in cathodoluminescence and better thermal stability. These findings indicate that diffusion path of carriers in these samples is shorter, limiting the amount of carriers reaching nonradiative recombination centers. According to TEM images only mixed dislocations open into the V-pits, usually above the multi quantum wells thus not influencing directly the emission.

Al-free active region laser diodes at 894 nm for compact Cesium atomic clocks

2015 ◽  
Author(s):  
N. Von Bandel ◽  
J. Bébé Manga Lobé ◽  
M. Garcia ◽  
A. Larrue ◽  
Y. Robert ◽  
...  
Keyword(s):  
Active Region ◽  
Laser Diodes ◽  
Atomic Clocks

Feasibility Of Novel Si-Based Interminiband Lasers

1998 ◽  
Vol 533 ◽  
Author(s):  
Gregory Sun ◽  
Lionel Friedman ◽  
Richard A. Soref
Keyword(s):  
Quantum Wells ◽  
Current Density ◽  
Population Inversion ◽  
Heavy Hole ◽  
Optical Gain ◽  
Laser Structure ◽  
Strained Si ◽  
Superlattice Structures ◽  
A Current

AbstractWe have designed a parallel interminiband lasing in superlattice structures of coherently strained Si0.5Ge0.5/Si quantum wells (QWs). Population inversion is achieved between the non-parabolic heavy-hole valence minibands locally in-k-space. Lasing transition is at 5.4μm. Our analysis indicates that an optical gain of 134/cm can be obtained when the laser structure is pumped with a current density of 5kA/cm2.

Properties of highly strained InGaAs/GaAs quantum wells for 1.2-μm laser diodes

2002 ◽  
Vol 81 (13) ◽  
pp. 2334-2336 ◽  
Author(s):  
S. Mogg ◽  
N. Chitica ◽  
R. Schatz ◽  
M. Hammar
Keyword(s):  
Quantum Wells ◽  
Laser Diodes ◽  
Highly Strained

scholarly journals Cancellation analysis of current density in solar active region NOAA10019

2015 ◽  
Vol 5 ◽  
pp. A28 ◽  
Author(s):  
Gaetano De Vita ◽  
Antonio Vecchio ◽  
Luca Sorriso-Valvo ◽  
Carine Briand ◽  
Leonardo Primavera ◽  
...  
Keyword(s):  
Active Region ◽  
Current Density ◽  
Solar Active Region
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