LARGE AREA NANOSCALE PATTERNING BY INTERFEROMETRIC LITHOGRAPHY – NANOPHOTONICS AND NANOFLUIDICS

2008 ◽

Vol 18 (04) ◽

pp. 889-899 ◽

Cited By ~ 1

Author(s):

S. R. J. BRUECK

Keyword(s):

Silica Nanoparticles ◽

Large Scale ◽

Frequency Doubling ◽

Silicon Substrates ◽

Large Area ◽

Scientific Investigations ◽

Nanoscale Patterning ◽

Colloidal Deposition ◽

Interferometric Lithography ◽

Porous Walls

Interferometric lithography offers a facile, inexpensive, large-area fabrication capability for the formation of large areas of nanoscale periodic features. A self-aligned frequency doubling process to a 22-nm half-pitch is demonstrated. Many investigations of nanoscale phenomena require large-area samples, both for scientific investigations and certainly for ultimate large-scale applications. The utility of interferometric lithography is demonstrated to applications in nanophotonics and nanofluidics. For nanophotonics, metamaterial fabrication, negative index metamaterials and plasmonic applications are discussed. Two approaches to the fabrication of nanofluidic structures: etching and oxidation of silicon substrates, and colloidal deposition of silica nanoparticles to form porous walls and roofs followed by calcination to remove the photoresist and sinter the particles. These later structures have evident biomimetic functionality.

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Interaction-tailored organization of large-area colloidal assemblies

Beilstein Journal of Nanotechnology ◽

10.3762/bjnano.9.150 ◽

2018 ◽

Vol 9 ◽

pp. 1582-1593 ◽

Cited By ~ 4

Author(s):

Silvia Rizzato ◽

Elisabetta Primiceri ◽

Anna Grazia Monteduro ◽

Adriano Colombelli ◽

Angelo Leo ◽

...

Keyword(s):

Film Formation ◽

Low Cost ◽

Interparticle Distance ◽

Particle Interactions ◽

Polystyrene Spheres ◽

Large Area ◽

Nanoscale Patterning ◽

Particle Solution ◽

Number Of Particles ◽

Deposition Conditions

Colloidal lithography is an innovative fabrication technique employing spherical, nanoscale crystals as a lithographic mask for the low cost realization of nanoscale patterning. The features of the resulting nanostructures are related to the particle size, deposition conditions and interactions involved. In this work, we studied the absorption of polystyrene spheres onto a substrate and discuss the effect of particle–substrate and particle–particle interactions on their organization. Depending on the nature and the strength of the interactions acting in the colloidal film formation, two different strategies were developed in order to control the number of particles on the surface and the interparticle distance, namely changing the salt concentration and absorption time in the particle solution. These approaches enabled the realization of large area (≈cm2) patterning of nanoscale holes (nanoholes) and nanoscale disks (nanodisks) of different sizes and materials.

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Properties of large-area nanomagnet arrays with 100 nm period made by interferometric lithography

Journal of Applied Physics ◽

10.1063/1.370029 ◽

1999 ◽

Vol 85 (8) ◽

pp. 6160-6162 ◽

Cited By ~ 94

Author(s):

T. A. Savas ◽

M. Farhoud ◽

Henry I. Smith ◽

M. Hwang ◽

C. A. Ross

Keyword(s):

Large Area ◽

Interferometric Lithography

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Sub-Wavelength Texturing for Solar Cells Using Interferometric Lithography

Advances in Science and Technology ◽

10.4028/www.scientific.net/ast.51.115 ◽

2006 ◽

Vol 51 ◽

pp. 115-120 ◽

Cited By ~ 4

Author(s):

W.L. Chiu ◽

M.M. Alkaisi ◽

G. Kumaravelu ◽

R.J. Blaikie ◽

R.J. Reeves ◽

...

Keyword(s):

Defect Density ◽

Substantial Reduction ◽

Surface Texturing ◽

Silicon Substrates ◽

Textured Surface ◽

Large Area ◽

Periodic Patterns ◽

Interferometric Lithography ◽

Plasma Reflection ◽

Sub Wavelength

We have employed Interferometric Lithography (IL) for sub-wavelength surface texturing on large area silicon substrates. Low defect density Reactive Ion Etching (RIE) processes have been developed to transfer the pattern into the silicon using SF 6 plasma. Reflection measurements on the sub-wavelength textured surface have been carried out and show a substantial reduction from ~30% to below 4% over the spectrum range from 400nm to 1200nm. IL is a mask-less lithography technique which is used to define periodic patterns. The theoretical limit of the pitch size of the structure is half of the wavelength of the light source. Hence, the sub-wavelength patterns can be achieved easily. Moreover, sub-wavelength texturing requires short RIE processes; most of the plasma-induced damage on the silicon surface can be avoided.

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