SOLAR-BLIND SINGLE-PHOTON 4H-SiC AVALANCHE PHOTODIODES

2009 ◽  
Vol 19 (01) ◽  
pp. 85-92
Author(s):  
ALEXEY VERT ◽  
STANSILAV SOLOVIEV ◽  
JODY FRONHEISER ◽  
PETER SANDVIK
Keyword(s):  
Detection Efficiency ◽  
Single Photon ◽  
Optical Filter ◽  
Single Photon Detection ◽  
Dark Count ◽  
Photon Detection ◽  
Linear Mode ◽  
Solar Blind ◽  
Geiger Mode ◽  
Photon Detection Efficiency

A solar blind 4 H - SiC single photon avalanche diode (SPAD) is reported. The SPAD with separate absorption and multiplication layers was designed for operation with low dark counts. A thin film optical filter deposited on a sapphire window of the device package provided sensitivity in the wavelength range between 240 and 280 nm with a very high solar photon rejection ratio. An estimated dark current of 0.4 pA (0.75 nA/cm2) at a gain of 1000 was measured on a device with an effective mesa diameter of 260 µm. A single photon detection efficiency of 9% (linear mode) and 9.5% (gated Geiger mode) were achieved at a wavelength of 266 nm for the same device. Corresponding dark count rate and dark count probability were 600 Hz and 4×10-4.

Advances in Silicon Carbide Single Photon Detectors

2011 ◽  
Vol 679-680 ◽  
pp. 543-546
Author(s):  
Alexey V. Vert ◽  
Stanislav I. Soloviev ◽  
Peter M. Sandvik
Keyword(s):  
Detection Efficiency ◽  
Single Photon ◽  
Optical Filter ◽  
Cost Effective ◽  
Single Photon Detection ◽  
Photon Detectors ◽  
Photon Detection ◽  
Solar Blind ◽  
Single Photon Detectors ◽  
Photon Detection Efficiency

We present overview of achieved results on 4H-SiC avalanche photodiodes (APDs) and arrays. Cost-effective solar-blind optical filter allows achieving high solar photon rejection ratio of more than 106 in combination with more than 40% single photon detection efficiency at 266nm. Three iterations of devices were fabricated and evaluated to compare their optical and electrical properties. Dark count rates and single photon detection efficiencies are the main characteristics compared for these three iterations of device designs.

Design, Fabrication, and Verification of Blue-Extended Single-Photon Avalanche Diode with Low Dark Count Rate and High Photon Detection Efficiency

2021 ◽  
Vol 16 (4) ◽  
pp. 546-551
Author(s):  
Mei-Ling Zeng ◽  
Yang Wang ◽  
Xiang-Liang Jin ◽  
Yan Peng ◽  
Jun Luo
Keyword(s):  
Bias Voltage ◽  
Spectral Range ◽  
Count Rate ◽  
Detection Efficiency ◽  
Single Photon ◽  
Dark Count ◽  
Photon Detection ◽  
Avalanche Diode ◽  
Dark Count Rate ◽  
Photon Detection Efficiency

Single-photon avalanche diodes (SPADs) can detect extremely weak optical signals and are mostly used in single-photon imaging, quantum communication, medical detection, and other fields. In this paper, a low dark count rate (DCR) single-photon avalanche diode device is designed based on the 180 nm standard BCD process. The device has a good response in the 450~750 nm spectral range. The active area of the device adopts a P+/N-Well structure with a diameter of 20 µm. The low-doped N-Well increases the thickness of the depletion region and can effectively improve the detection sensitivity; the P-Well acts as a guard ring to prevent premature breakdown of the PN junction edge; the isolation effect of the deep N-Well reduces the noise coupling of the substrate. Use the TCAD simulation tool to verify the SPAD’s basic principles. The experimental test results show that the avalanche breakdown voltage of the device is 11.7 V. The dark count rate is only 123 Hz when the over-bias voltage is 1 V, and the peak photon detection efficiency (PDE) reaches 37.5% at the wavelength of 500 nm under the 0.5 V over-bias voltage. PDE exceeds 30% in the range of 460~640 nm spectral range, which has a good response in the blue band. The SPAD device provides certain design ideas for the research of fluorescence detectors.

scholarly journals Towards THGEM UV-photon detectors for RICH: on single-photon detection efficiency in Ne/CH4and Ne/CF4

2010 ◽  
Vol 5 (01) ◽  
pp. P01002-P01002 ◽  
Author(s):  
C D R Azevedo ◽  
M Cortesi ◽  
A V Lyashenko ◽  
A Breskin ◽  
R Chechik ◽  
...  
Keyword(s):  
Detection Efficiency ◽  
Single Photon ◽  
Single Photon Detection ◽  
Photon Detectors ◽  
Photon Detection ◽  
Photon Detection Efficiency

Enhanced solar-blind ultraviolet single-photon detection with a Geiger-mode silicon avalanche photodiode

2016 ◽  
Vol 14 (3) ◽  
pp. 030401-30404 ◽  
Author(s):  
Yafan Shi Yafan Shi ◽  
Zhaohui Li Zhaohui Li ◽  
Baicheng Feng Baicheng Feng ◽  
Peiqin Yan Peiqin Yan ◽  
Bingcheng Du Bingcheng Du ◽  
...  
Keyword(s):  
Single Photon ◽  
Avalanche Photodiode ◽  
Single Photon Detection ◽  
Photon Detection ◽  
Solar Blind ◽  
Geiger Mode

Influence of Defects in 4H-SiC Avalanche Photodiodes on Geiger-Mode Dark Count Probability

2009 ◽  
Vol 615-617 ◽  
pp. 877-880 ◽  
Author(s):  
Alexey V. Vert ◽  
Stanislav I. Soloviev ◽  
Jody Fronheiser ◽  
Peter M. Sandvik
Keyword(s):  
Single Photon ◽  
Avalanche Photodiodes ◽  
Single Photon Detection ◽  
Induced Current ◽  
Dark Count ◽  
Device Structure ◽  
Photon Detection ◽  
Avalanche Diodes ◽  
Geiger Mode ◽  
Electron Beam Induced Current

4H-SiC single photon avalanche diodes are reported. A separate absorption and multiplication non-reach through device structure was optimized for operation in Geiger mode. An estimated dark current at a gain of 1000 was ranging between 0.4 pA (0.75 nA/cm2) and 20nA (38 A/cm2) on devices with an effective mesa diameter of 260 m. The electron beam induced current technique was used to image defects in the active region of studied devices. Increased reverse bias leakage current and increased Geiger mode dark count probability were correlated with the presence of large number of defects. Single photon detection efficiencies of up to 11% were measured at a wavelength of 266 nm in Geiger mode.

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