A scalable single-photon avalanche diode with improved photon detection efficiency and dark count noise

Optik ◽  
2020 ◽  
Vol 212 ◽  
pp. 164692
Author(s):  
Dong Han ◽  
Yue Xu ◽  
Feiyang Sun ◽  
Fuming Song
Keyword(s):  
Detection Efficiency ◽  
Single Photon ◽  
Dark Count ◽  
Photon Detection ◽  
Avalanche Diode ◽  
Photon Detection Efficiency

Design, Fabrication, and Verification of Blue-Extended Single-Photon Avalanche Diode with Low Dark Count Rate and High Photon Detection Efficiency

2021 ◽  
Vol 16 (4) ◽  
pp. 546-551
Author(s):  
Mei-Ling Zeng ◽  
Yang Wang ◽  
Xiang-Liang Jin ◽  
Yan Peng ◽  
Jun Luo
Keyword(s):  
Bias Voltage ◽  
Spectral Range ◽  
Count Rate ◽  
Detection Efficiency ◽  
Single Photon ◽  
Dark Count ◽  
Photon Detection ◽  
Avalanche Diode ◽  
Dark Count Rate ◽  
Photon Detection Efficiency

Single-photon avalanche diodes (SPADs) can detect extremely weak optical signals and are mostly used in single-photon imaging, quantum communication, medical detection, and other fields. In this paper, a low dark count rate (DCR) single-photon avalanche diode device is designed based on the 180 nm standard BCD process. The device has a good response in the 450~750 nm spectral range. The active area of the device adopts a P+/N-Well structure with a diameter of 20 µm. The low-doped N-Well increases the thickness of the depletion region and can effectively improve the detection sensitivity; the P-Well acts as a guard ring to prevent premature breakdown of the PN junction edge; the isolation effect of the deep N-Well reduces the noise coupling of the substrate. Use the TCAD simulation tool to verify the SPAD’s basic principles. The experimental test results show that the avalanche breakdown voltage of the device is 11.7 V. The dark count rate is only 123 Hz when the over-bias voltage is 1 V, and the peak photon detection efficiency (PDE) reaches 37.5% at the wavelength of 500 nm under the 0.5 V over-bias voltage. PDE exceeds 30% in the range of 460~640 nm spectral range, which has a good response in the blue band. The SPAD device provides certain design ideas for the research of fluorescence detectors.

A Single-Photon Avalanche Diode in 90-nm CMOS Imaging Technology With 44% Photon Detection Efficiency at 690 nm

2012 ◽  
Vol 33 (5) ◽  
pp. 694-696 ◽  
Author(s):  
Eric A. G. Webster ◽  
Justin A. Richardson ◽  
Lindsay A. Grant ◽  
David Renshaw ◽  
Robert K. Henderson
Keyword(s):  
Detection Efficiency ◽  
Single Photon ◽  
Photon Detection ◽  
Imaging Technology ◽  
Avalanche Diode ◽  
Photon Detection Efficiency

Low Dark Count Rate and High Single-Photon Detection Efficiency Avalanche Photodiode in Geiger-Mode Operation

2007 ◽  
Vol 19 (6) ◽  
pp. 378-380 ◽  
Author(s):  
Mingguo Liu ◽  
Xiaogang Bai ◽  
Chong Hu ◽  
Xiangyi Guo ◽  
Joe C. Campbell ◽  
...  
Keyword(s):  
Count Rate ◽  
Detection Efficiency ◽  
Single Photon ◽  
Avalanche Photodiode ◽  
Single Photon Detection ◽  
Dark Count ◽  
Photon Detection ◽  
Dark Count Rate ◽  
Geiger Mode ◽  
Photon Detection Efficiency

A CMOS Single Photon Avalanche Diode Device with High Photon Detection Efficiency

2016 ◽  
Vol 45 (8) ◽  
pp. 823001
Author(s):  
王巍 WANG Wei ◽  
鲍孝圆 BAO Xiao-yuan ◽  
陈丽 CHEN Li ◽  
徐媛媛 XU Yuan-yuan ◽  
陈婷 CHEN Ting ◽  
...  
Keyword(s):  
Detection Efficiency ◽  
Single Photon ◽  
Photon Detection ◽  
Avalanche Diode ◽  
Photon Detection Efficiency

The design and characterization of high photon detection efficiency CMOS single-photon avalanche diode

2018 ◽  
Vol 32 (25) ◽  
pp. 1850302
Author(s):  
Wei Wang ◽  
Ting Chen ◽  
Yongchun He ◽  
Mengjia Huang ◽  
Hao Yang ◽  
...  
Keyword(s):  
Low Voltage ◽  
Detection Efficiency ◽  
Single Photon ◽  
Uniform Electric Field ◽  
Cmos Process ◽  
Guard Ring ◽  
Voltage Standard ◽  
Photon Detection ◽  
Avalanche Diode ◽  
Photon Detection Efficiency

The high photon detection efficiency (PDE) single-photon avalanche diode (SPAD) designed with a low voltage standard 0.18 [Formula: see text]m CMOS process is investigated in detail. The proposed CMOS SPAD is with P+/N-well junction structure, and its multiplication region is surrounded by a virtual guard ring, with which the premature edge avalanche breakdown can be prevented. The analytical and simulation results show that the CMOS SPAD has a uniform electric field distribution in P+/N-well junction, and the breakdown voltage is as low as 8.2 V, the PDE is greater than 40% at the wavelength range of 650–950 nm, at a low excess bias voltage (light intensity is about 0.001 W/cm2), and the peak PDE at 800 nm is about 48%, the relatively low dark count rate (DCR) of 1.4 KHz is obtained.

SOLAR-BLIND SINGLE-PHOTON 4H-SiC AVALANCHE PHOTODIODES

2009 ◽  
Vol 19 (01) ◽  
pp. 85-92
Author(s):  
ALEXEY VERT ◽  
STANSILAV SOLOVIEV ◽  
JODY FRONHEISER ◽  
PETER SANDVIK
Keyword(s):  
Detection Efficiency ◽  
Single Photon ◽  
Optical Filter ◽  
Single Photon Detection ◽  
Dark Count ◽  
Photon Detection ◽  
Linear Mode ◽  
Solar Blind ◽  
Geiger Mode ◽  
Photon Detection Efficiency

A solar blind 4 H - SiC single photon avalanche diode (SPAD) is reported. The SPAD with separate absorption and multiplication layers was designed for operation with low dark counts. A thin film optical filter deposited on a sapphire window of the device package provided sensitivity in the wavelength range between 240 and 280 nm with a very high solar photon rejection ratio. An estimated dark current of 0.4 pA (0.75 nA/cm2) at a gain of 1000 was measured on a device with an effective mesa diameter of 260 µm. A single photon detection efficiency of 9% (linear mode) and 9.5% (gated Geiger mode) were achieved at a wavelength of 266 nm for the same device. Corresponding dark count rate and dark count probability were 600 Hz and 4×10-4.

An Estimation of Single Photon Avalanche Diode (SPAD) Photon Detection Efficiency (PDE) Nonuniformity

2013 ◽  
Vol 13 (5) ◽  
pp. 1637-1640 ◽  
Author(s):  
Vitali Savuskan ◽  
Igor Brouk ◽  
Michael Javitt ◽  
Yael Nemirovsky
Keyword(s):  
Detection Efficiency ◽  
Single Photon ◽  
Photon Detection ◽  
Avalanche Diode ◽  
Photon Detection Efficiency

Single-photon detection efficiency up to 50% at 1310 nm with an InGaAs/InP avalanche diode gated at 1.25 GHz

2013 ◽  
Vol 102 (14) ◽  
pp. 141104 ◽  
Author(s):  
Alessandro Restelli ◽  
Joshua C. Bienfang ◽  
Alan L. Migdall
Keyword(s):  
Detection Efficiency ◽  
Single Photon ◽  
Single Photon Detection ◽  
Photon Detection ◽  
Avalanche Diode ◽  
Photon Detection Efficiency

scholarly journals Automated Characterization of Single-Photon Avalanche Photodiode

2012 ◽  
Vol 12 (5) ◽  
Author(s):  
Aina Mardhiyah M. Ghazali ◽  
Audun Nystad Bugge ◽  
Sebastien Sauge ◽  
Vadim Makarov
Keyword(s):  
Detection Efficiency ◽  
Single Photon ◽  
Photon Counting ◽  
Avalanche Photodiode ◽  
Dark Count ◽  
Photon Detector ◽  
Single Photon Detector ◽  
Photon Detection ◽  
Photon Detection Efficiency

We report an automated characterization of a single-photon detector based on commercial silicon avalanche photodiode (PerkinElmer C30902SH). The photodiode is characterized by I-V curves at different illumination levels (darkness, 10 pW and 10 µW), dark count rate and photon detection efficiency at different bias voltages. The automated characterization routine is implemented in C++ running on a Linux computer. ABSTRAK: Kami melaporkan pencirian pengesan foton tunggal secara automatik berdasarkan kepada diod foto runtuhan silikon (silicon avalanche photodiode) (PerkinElmer C30902SH) komersial. Pencirian  diod foto adalah berdasarkan kepada plot arus-voltan (I-V) pada tahap pencahayaan yang berbeza (kelam - tanpa cahaya, 10pW, dan 10µW), kadar bacaan latar belakang, kecekapan pengesanan foton pada voltan picuan yang berbeza. Pengaturcaraan C++ digunakan di dalam rutin pencirian automatik melalui komputer dengan sistem pengendalian LINUX.KEYWORDS: avalanche photodiode (APD); single photon detector; photon counting; experiment automation

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