Enhanced solar-blind ultraviolet single-photon detection with a Geiger-mode silicon avalanche photodiode

2016 ◽  
Vol 14 (3) ◽  
pp. 030401-30404 ◽  
Author(s):  
Yafan Shi Yafan Shi ◽  
Zhaohui Li Zhaohui Li ◽  
Baicheng Feng Baicheng Feng ◽  
Peiqin Yan Peiqin Yan ◽  
Bingcheng Du Bingcheng Du ◽  
...  
Keyword(s):  
Single Photon ◽  
Avalanche Photodiode ◽  
Single Photon Detection ◽  
Photon Detection ◽  
Solar Blind ◽  
Geiger Mode

Ge–Si separate absorption and multiplication avalanche photodiode for Geiger mode single photon detection

2008 ◽  
Vol 93 (18) ◽  
pp. 183511 ◽  
Author(s):  
M. S. Carroll ◽  
K. Childs ◽  
R. Jarecki ◽  
T. Bauer ◽  
K. Saiz
Keyword(s):  
Single Photon ◽  
Avalanche Photodiode ◽  
Single Photon Detection ◽  
Photon Detection ◽  
Geiger Mode

Experimental Characterization of APD and Design of Quenching Circuit for Single-Photon Detection

2012 ◽  
Vol 246-247 ◽  
pp. 273-278 ◽  
Author(s):  
Hua Lü
Keyword(s):  
Integrated Circuit ◽  
Single Photon ◽  
Signal To Noise Ratio ◽  
Avalanche Photodiode ◽  
Low Noise ◽  
High Signal ◽  
Single Photon Detection ◽  
Single Photon Detector ◽  
Photon Detection ◽  
Geiger Mode

In this paper, we experimentally characterize the Inga As/Imp avalanche photodiode (APD), which is working in Geiger mode, so as to choose the single photon detector for quantum communication. Due to the fact that bias of APD tends to be flat after avalanche, we first adopt the methodology of passive quenching to determine dark breakdown voltage. Experiment results indicate that temperature reduction will widen the optimal operating region and increase the optimal multiplication; therefore APD will be more sensitive. Epitaxial APD is the best choice for single-photon detection among the APDs we have tested for its low noise level and high signal-to-noise ratio (SNR). Finally, we design a mixed passive-active quenching integrated circuit with gate control, which is quick with the quenching time of about 25ns and has controllable dead time with minimum of about 60ns.

SOLAR-BLIND SINGLE-PHOTON 4H-SiC AVALANCHE PHOTODIODES

2009 ◽  
Vol 19 (01) ◽  
pp. 85-92
Author(s):  
ALEXEY VERT ◽  
STANSILAV SOLOVIEV ◽  
JODY FRONHEISER ◽  
PETER SANDVIK
Keyword(s):  
Detection Efficiency ◽  
Single Photon ◽  
Optical Filter ◽  
Single Photon Detection ◽  
Dark Count ◽  
Photon Detection ◽  
Linear Mode ◽  
Solar Blind ◽  
Geiger Mode ◽  
Photon Detection Efficiency

A solar blind 4 H - SiC single photon avalanche diode (SPAD) is reported. The SPAD with separate absorption and multiplication layers was designed for operation with low dark counts. A thin film optical filter deposited on a sapphire window of the device package provided sensitivity in the wavelength range between 240 and 280 nm with a very high solar photon rejection ratio. An estimated dark current of 0.4 pA (0.75 nA/cm2) at a gain of 1000 was measured on a device with an effective mesa diameter of 260 µm. A single photon detection efficiency of 9% (linear mode) and 9.5% (gated Geiger mode) were achieved at a wavelength of 266 nm for the same device. Corresponding dark count rate and dark count probability were 600 Hz and 4×10-4.

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