Spin Polarized Tunneling at the Metal-Insulator Transition

2003 ◽  
Vol 17 (18n20) ◽  
pp. 3723-3725 ◽  
Author(s):  
W. Teizer ◽  
F. Hellman ◽  
R. C. Dynes

We have determined the spin polarized density of states (DOS) of 3-d amorphous Gd x Si 1-x in the quantum critical regime of a tunable Metal-Insulator Transition (MIT). Using a spin polarized BCS DOS we fit the data and extract the spin polarization P.

JETP Letters ◽  
2018 ◽  
Vol 108 (10) ◽  
pp. 691-696 ◽  
Author(s):  
N. E. Sluchanko ◽  
A. P. Dudka ◽  
O. N. Khrykina ◽  
N. B. Bolotina ◽  
A. N. Azarevich ◽  
...  

2006 ◽  
Vol 96 (21) ◽  
Author(s):  
G. Allison ◽  
E. A. Galaktionov ◽  
A. K. Savchenko ◽  
S. S. Safonov ◽  
M. M. Fogler ◽  
...  

2006 ◽  
Vol 20 (30n31) ◽  
pp. 5229-5238
Author(s):  
DAVID NEILSON ◽  
D. J. WALLACE GELDART

We show the insulating region of the metal-insulator transition phenomena in disordered two-dimensional electron systems contains new information about the quantum critical dynamics at low T because the insulating region and the quantum critical region are two aspects of the localized phase.


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