ANTI-RESONANCES IN A NORMAL METAL/SUPERCONDUCTOR JUNCTION WITH A SIDE-COUPLED QUANTUM DOT

2010 ◽  
Vol 24 (28) ◽  
pp. 5505-5513
Author(s):  
ZHENG-YI WU ◽  
JIN-FU FENG

Using the equivalent single-particle multi-channel network and the Landauer formula, we theoretically study anti-resonances in conductance of a normal metal–superconductor junction with a side-coupled quantum dot. The transport properties depend on the interplay between the Coulomb blockade effect and the Andreev reflection. It is found that the calculated dependence of the conductance on the gate voltage of dot exhibits two anti-resonant conductance dips. This behavior is caused by the destructive interference of the wave directly transmitted through the normal metal–superconductor junction and the wave reflected from the dot. Moreover, we find that the shape of two anti-resonance profile is symmetric, due to the Andreev reflection, depending on the strength of coupling between the quantum dot and normal metal.

2000 ◽  
Vol 14 (17) ◽  
pp. 1743-1752
Author(s):  
SHI-JIE XIONG

We investigate the transport properties of a multi-level quantum dot with strong electron–electron interaction by the use of the equivalent single-particle multi-channel network and Landauer formulae. By including the effect of cotunneling to the leads the calculated results show Kondo-type transport in valleys of conductance as a function of the gate voltage which was found in recent experiments. We calculate the Kondo temperature for various parameters. We discuss the condition for observing this effect in the experiments.


2001 ◽  
Vol 15 (31) ◽  
pp. 4111-4121 ◽  
Author(s):  
JIN-FU FENG ◽  
SHI-JIE XIONG

We study the transport properties of electrons in a quantum wire with side-coupled quantum dots in Coulomb blockade regime by the use of the equivalent single-particle multi-channel network and Landauer formula. At low temperatures the calculated dependence of the conductance on the gate voltage of dots exhibits two dips, indicating the destructive interference of the wave directly transmitted through the wire and the wave reflected from the dots. In a wire with more than one side-coupled dots the suppression of conductance is a simple summation of the effects of scattering of all the dots. The possibility of fabricating tunable switch devices by using such structures is discussed.


2009 ◽  
Vol 247 (2) ◽  
pp. 335-341 ◽  
Author(s):  
Long Bai ◽  
Yang-Jin Wu ◽  
Baigeng Wang

1999 ◽  
Vol 59 (5) ◽  
pp. 3831-3840 ◽  
Author(s):  
Qing-feng Sun ◽  
Jian Wang ◽  
Tsung-han Lin

2022 ◽  
Vol 2022 ◽  
pp. 1-6
Author(s):  
Lamessa Gudata ◽  
Jule Leta Tesfaye ◽  
Abela Saka ◽  
R. Shanmugam ◽  
L. Priyanka Dwarampudi ◽  
...  

The exploration of Coulomb blockade oscillations in plasmonic nanoparticle dimers is the subject of this study. When two metal nanoparticles are brought together at the end of their journey, tunnelling current prevents an infinite connection dipolar plasmon and an infinite amplification in the electric fields throughout the hot spot in between nanoparticles from occurring. One way to think about single-electron tunnelling through some kind of quantum dot is to think about Coulomb blockage oscillations in conductance. The electron transport between the dot and source is considered. The model of study is the linear conductance skilled at describing the basic physics of electronic states in the quantum dot. The linear conductance through the dot is defined as G = lim ⟶ 0 I / V in the limit of infinity of small bias voltage. We discuss the classical and quantum metallic Coulomb blockade oscillations. Numerically, the linear conductance was plotted as a function gate voltage. The Coulomb blockade oscillation occurs as gate voltage varies. In the valleys, the conductance falls exponentially as a function gate voltage. As a result of our study, the conductance is constant at high temperature and does not show oscillation in both positive and negative gate voltages. At low temperature, conductance shows oscillation in both positive and negative gate voltages.


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