DECREASED REFRACTIVE INDEX OF NANOCRYSTALLINE ZIRCONIUM OXIDE THIN FILMS

2012 ◽  
Vol 26 (02) ◽  
pp. 1250012 ◽  
Author(s):  
V. V. ATUCHIN ◽  
V. SH. ALIEV ◽  
B. M. AYUPOV ◽  
I. V. KOROLKOV
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Zirconium Oxide ◽  
Structural Parameters ◽  
Ion Beam ◽  
Xrd Analysis ◽  
Optical Parameters ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Long Time

Amorphous zirconium oxide (a- ZrO 2) thin films were prepared onto fuzzed quartz substrates by ion beam sputtering deposition (IBSD) method in ( Ar + O 2) gas mixture. Optical parameters of the films were evaluated by laser ellipsometry (λ = 632.8 nm ) and optical transmission measurements. Structural parameters were studied by XRD measurements. Variation of refractive index and film thickness have been defined as a function of time of high-temperature annealing at T = 900° C . Formation of monoclinic zirconium oxide (m- ZrO 2) nanocrystals with diameter of ~60 nm embedded into a- ZrO 2 matrix has been found by XRD analysis after long-time annealing.

Ion-beam sputtering deposition of CsI thin films

2004 ◽  
Vol 80 (8) ◽  
pp. 1789-1791 ◽  
Author(s):  
M.A. Nitti ◽  
A. Valentini ◽  
G.S. Senesi ◽  
G. Ventruti ◽  
E. Nappi ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Beam Sputtering

Optimization in fabricating bismuth telluride thin films by ion beam sputtering deposition

2012 ◽  
Vol 520 (16) ◽  
pp. 5245-5248 ◽  
Author(s):  
Z.H. Zheng ◽  
P. Fan ◽  
T.B. Chen ◽  
Z.K. Cai ◽  
P.J. Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Bismuth Telluride ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Beam Sputtering

A Study on the Process of ZnO Thin Films Prepared by Ion Beam Sputtering

2011 ◽  
Vol 233-235 ◽  
pp. 2399-2402 ◽  
Author(s):  
Shen Jiang Wu ◽  
Wei Shi ◽  
Jun Hong Su ◽  
Wen Qi Wang
Keyword(s):  
Thin Films ◽  
Orthogonal Experiment ◽  
Ion Beam ◽  
Experimental Result ◽  
Zno Thin Films ◽  
Ion Beam Sputtering ◽  
Technological Parameters ◽  
Sputtering Deposition ◽  
Beam Sputtering ◽  
Deposition Technology

Based on the ion beam sputtering deposition technology, we adopted the reactive sputtering deposition method to accomplish the coating on the glass substrata with ZnO thin films. We used the four-factor and three-level L9(34) orthogonal experiment to obtain the best technological parameters of deposited ZnO thin films: discharge voltage 3.5KV, oxygen current capacity 8SCCM, the coil current 8A, the distance between target and substrata 140mm. The purity of the deposited ZnO thin film is 85.77%, and it has the good crystallization in orientation. The experimental results show that research and development of the ion beam sputtering source is advanced and has a good application value, and the ion beam sputtering deposition technology can be used to deposit the preferred orientation thin films with good performance. The findings have provided the experimental result and the beneficial reference for the ion beam sputtering deposition research.

Ion-Beam Sputtering Deposited Cu-Doped CdS Thin Film

2013 ◽  
Vol 743-744 ◽  
pp. 915-919
Author(s):  
Guang Xing Liang ◽  
Ping Fan ◽  
Peng Ju Cao ◽  
Zhuang Hao Zheng
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Ion Beam ◽  
Xrd Analysis ◽  
Ion Beam Sputtering ◽  
Structural Morphology ◽  
Wurtzite Phase ◽  
Cds Thin Film ◽  
Beam Sputtering ◽  
Cds Thin Films

Cu-doped CdS thin film has been successfully deposited by ion-beam sputtering deposition. The structural, morphology, optical and electrical properties of as-deposited and annealed Cu-doped CdS thin films were investigated. The heavily Cu-doped CdS films annealed at 400 °C was demonstrated to be improved in structural, morphology, electrical and optical properties. X-ray diffraction (XRD) analysis indicated the formation of polycrystalline CdS film with the structure of hexagonal wurtzite phase. No distinct impurity of Cu and Cu-S phase was detected in Cu-doped CdS thin films. Atomic force microscopy (AFM) revealed that the grain size was increased after annealed. Optical transmission and absorption spectroscopy measurement revealed a high absorption and energy band gap was of about 2.40 eV. The CdS thin film was of p-type conductivity and the resistivity was found to be 1.28×10-1Ωcm.

Preparation of high J c YBa2Cu3O7?? superconducting thin films by ion beam sputtering deposition

1991 ◽  
Vol 52 (3) ◽  
pp. 203-205
Author(s):  
Congxin Ren ◽  
Guoliang Chen ◽  
Jianmin Chen ◽  
Jie Yang ◽  
Yijie Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Superconducting Thin Films ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Beam Sputtering
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