A Theoretical Study on the Pressure Dependence of the Band Gap in ${\rm A^{I}B^{III}C^{VI}_2}$ Compounds

1997 ◽  
Vol 11 (16) ◽  
pp. 1959-1967 ◽  
Author(s):  
R. Asokamani ◽  
R. Mercy Amirthakumari ◽  
G. Pari

The self-consistent scalar relativistic band structure for AgGaX 2 (X = S, Se, Te) performed in chalcopyrite structure using the TBLMTO method at various pressures are reported here. Empty spheres were introduced in the calculations as the chalcopyrite structure is loosely packed. From the total energy calculations, the equilibrium lattice constant and the bulk modulus at zero pressure were calculated and these values agree well with the reported experimental values. All these compounds are found to have direct energy gap at ambient pressure with the gap widening with increased pressures which are in agreement with the experimental results. The deformation potential, dE g /dP for the compounds are also reported here. The metallisation volumes are calculated and the possibility of observing superconductivity in these compounds is discussed.

1985 ◽  
Vol 55 (4) ◽  
pp. 327-331 ◽  
Author(s):  
S. Ves ◽  
K. Strössner ◽  
Chul Koo Kim ◽  
Manuel Cardona

2018 ◽  
Vol 1003 ◽  
pp. 012105
Author(s):  
Nidhal M. Abdul-Ameer ◽  
Moafak C. Abdulrida ◽  
Shatha M. Abdul-Hakeem

1999 ◽  
Vol 583 ◽  
Author(s):  
Harry A. Atwater ◽  
Regina Ragan ◽  
Kyu S. Min

AbstractThe narrow gap semiconductor alloys SnxGe1−x, and SnxSi1−x offer the possibility for engineering tunable direct energy gap Group IV semiconductor materials. For pseudomorphic SnxGe1−x, alloys grown on Ge (001) by molecular beam epitaxy, an indirect-to-direct bandgap transition with increasing Sn composition is observed, and the effects of misfit on the bandgap analyzed in terms of a deformation potential model. Key results are that pseudomorphic strain has only a very slight effect on the energy gap of SnxGe1−x, alloys grown on Ge (001) but for SnxGe1−x alloys grown on Ge (111) no indirect-to-direct gap transition is expected. In the SnxSi1−x system, ultrathin pseudomorphic epitaxially-stabilized α-SnxSi1−x alloys are grown on Si (001) substrates by conventional molecular beam epitaxy. Coherently strained oa-Sn quantum dots are formed within a defect-free Si (001) crystal by phase separation of the thin SnxSi1−x layers embedded in Si (001). Phase separation of the thin alloy film, and subsequent evolution occurs via growth and coarsening of regularly-shaped α-Sn quantum dots that appear as 4–6 nm diameter tetrakaidecahedra with facets oriented along elastically soft [100] directions. Attenuated total reflectance infrared absorption measurements indicate an absorption feature due to the α-Sn quantum dot array with onset at ˜0.3 eV and absorption strength of 8 × 103 cm−1, which are consistent with direct interband transitions.


1988 ◽  
Vol 38 (5) ◽  
pp. 3263-3268 ◽  
Author(s):  
C. Bosio ◽  
J. L. Staehli ◽  
M. Guzzi ◽  
G. Burri ◽  
R. A. Logan

2011 ◽  
Vol 695 ◽  
pp. 17-20
Author(s):  
Wonchai Promnopas ◽  
Titipun Thongtem ◽  
Somchai Thongtem

Purified cadmium sulfide crystals were successfully synthesized from 1:2 molar ratio of Cd and S powders by a 900 W microwave plasma for 120 min and 140 min. In the present research, XRD and SAED patterns including SEM, TEM, and FIB images were used to indicate phase and morphology of the products, with their Raman peaks at 303 and 605 cm-1. Photoemission was determined to be 537 nm, and direct energy gap (Eg) to be 2.48-2.51 eV.


1984 ◽  
Vol 44 (3) ◽  
pp. 341-343 ◽  
Author(s):  
B. Wakefield ◽  
M. A. G. Halliwell ◽  
T. Kerr ◽  
D. A. Andrews ◽  
G. J. Davies ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document