CHEMICAL BATH DEPOSITION: A PROMISING TECHNOLOGY TO BUILD LOW COST SOLAR CELLS

Following the model of DeVos and Pauwels (1981), we calculated the spectral factor of efficiencies (η1) for n +-p or n +-i-p heterojunctions that can be formed by different thin absorber materials (p-type or intrinsic(i)) with n +-type CdS thin films produced by conversion of chemically deposited CdS thin films by doping with Cl or In as reported before. The materials with η1 comparable to that of CuInSe 2 (Eg, 1.01 eV: 57%) are AgBiS 2 (Eg, 0.9 eV: 56%), Cu 2 SnS 3 (Eg, 0.91 eV: 57%), PbSnS 3 (Eg, 1.05 eV: 57%), PbSbS 4 (Eg, 1.13 eV: 56%).

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Effects of thiourea concentration on CdS thin films grown by chemical bath deposition for CdTe solar cells

Thin Solid Films ◽

10.1016/j.tsf.2004.11.060 ◽

2005 ◽

Vol 480-481 ◽

pp. 173-176 ◽

Cited By ~ 41

Author(s):

R. Mendoza-Pérez ◽

G. Santana-Rodríguez ◽

J. Sastre-Hernández ◽

A. Morales-Acevedo ◽

A. Arias-Carbajal ◽

...

Keyword(s):

Thin Films ◽

Solar Cells ◽

Chemical Bath Deposition ◽

Cdte Solar Cells ◽

Cds Thin Films ◽

Thiourea Concentration

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Demonstration of Low-Resistive P-Type Cu4O3 Thin Films by Radio Frequency Sputtering for Low-Cost Thin Film Solar Cells

2019 Compound Semiconductor Week (CSW) ◽

10.1109/iciprm.2019.8819255 ◽

2019 ◽

Author(s):

Md Abdul Majed Patwary ◽

Katsuhiko Saito ◽

Qixin Guo ◽

Tooru Tanaka ◽

Kin Man Yu ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Solar Cells ◽

Radio Frequency ◽

Low Cost ◽

Thin Film Solar Cells ◽

Radio Frequency Sputtering ◽

P Type

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Preparation and Characterization of Chemical Bath Deposited CdS Thin Films for Solar Cells

Materials Science Forum ◽

10.4028/www.scientific.net/msf.743-744.438 ◽

2013 ◽

Vol 743-744 ◽

pp. 438-442

Author(s):

Zhen Hai Xie ◽

Jian Kang Li

Keyword(s):

Thin Film ◽

Thin Films ◽

Solar Cells ◽

Chemical Bath Deposition ◽

Ph Value ◽

Ammonium Hydroxide ◽

Cadmium Acetate ◽

Cds Thin Film ◽

Cds Thin Films

Chemical bath deposition of CdS thin film for solar cells was investigated in this study. CdS thin films were prepared by chemical-bath deposition (CBD) from a bath containing cadmium acetate, ammonium chloride, ammonium hydroxide and thiourea in aqueous solution on the glass substrate at certain bath temperature. The characterization of samples was conducted by using different methods such as scanning electron microscopy (SEM), X-ray diffraction (XRD) and ultraviolet spectrophotometry (UV). The crystal quality of CdS thin films was improved after CdCl2 thermal annealing at 400C. The results showed that chemical bath deposited CdS thin film was symmetrical and compact, but depositing rate was low. As a result, the best deposition conditions were summarized, such as the pH value was about 10.5, depositing time was 60 minutes.

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Copper Indium Diselenide thin films using a hybrid method of chemical bath deposition and thermal evaporation

MRS Proceedings ◽

10.1557/opl.2011.1254 ◽

2011 ◽

Vol 1324 ◽

Author(s):

R. Ernesto Ornelas A ◽

Sadasivan Shaji ◽

Omar Arato ◽

David Avellaneda ◽

Alan Castillo ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Solar Cells ◽

Chemical Bath Deposition ◽

Low Cost ◽

Secondary Phase ◽

Copper Selenide ◽

Copper Indium Diselenide ◽

Visible Absorption ◽

Copper Indium

ABSTRACTCopper indium diselenide (CIS) based solar cells are one among the promising thin film solar cells. Most of the processes reported for the preparation of CIS directly or indirectly involve Se vapor or H2Se gases which are extremely toxic to health and environment. In this work, we report the preparation of CIS thin films by stacked layers of Glass/In/Se/Cu2Se and Glass/In/Se/Cu2Se/Se. For this, first indium (In) thin film was thermally evaporated on glass substrate on which selenium (Se) and copper selenide (Cu2Se) thin films were deposited sequentially by chemical bath deposition. Selenium thin films were grown from an aqueous solution containing Na2SeSO3 and CH3COOH at room temperature, triple deposition for 7, 7 and 10 min from consecutive baths. Copper selenide thin films were deposited at 35 °C for 1 hour from an aqueous bath containing CuSO4, Na2SeSO3 and NH4OH. Analysis of the X-ray diffraction patterns of the thin films formed at 400 °C from the precursor layer containing extra selenium layer showed the presence of chalcopyrite CuInSe2, without any secondary phase. Morphology of all the samples was analyzed using Scanning Electron Microscopy. Optical band gap was evaluated from the UV-Visible absorption spectra of these films and the values were 1.1 eV and 1 eV respectively for CIS thin films formed at 400 °C from the selenium deficient and selenium rich precursor layers. Electrical characterizations were done using photocurrent measurements. Thus preparation of a CuInSe2 absorber material by a non-toxic selenization process may open up a low cost technique for the fabrication of CIS based solar cells.

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