Growth of CdS thin films on indium coated glass substrates via chemical bath deposition and subsequent air annealing

2014 ◽  
Vol 320 ◽  
pp. 309-314 ◽  
Author(s):  
Biswajit Ghosh ◽  
Kamlesh Kumar ◽  
Balwant Kr Singh ◽  
Pushan Banerjee ◽  
Subrata Das
2009 ◽  
Vol 609 ◽  
pp. 243-247 ◽  
Author(s):  
H. Moualkia ◽  
S. Hariech ◽  
M.S. Aida

The present work deals with the preparation and characterization of cadmium sulfur (CdS) thin films. These films are prepared by chemical bath deposition on the well cleaned glass substrates. The thickness of the samples was measured by using profilometer DEKTAK, structural and optical properties were studied by X-ray diffraction analysis, and UV-visible spectrophotometry. The optical properties of the films have been investigated as a function of temperature. The band gap energy and Urbach energy were also investigated as a function of temperature. From the transmittance data analysis the direct band gap ranges from 2.21 eV to 2.34 eV. A dependence of band gap on temperature has been observed and the possible raisons are discussed. Transmission spectra indicates a high transmission coefficient (75 %). Structural analysis revealed that the films showed cubic structure, and the crystallite size decreased at a higher deposition temperature.


Author(s):  
Fatma Salamon

CdS thin films were prepared by chemical bath deposition technique (CBD) onto the glass substrates at different conditions of preparation. The obtained samples are studied by X-Ray diffraction (XRD). The XRD patterns of CdS samples revealed the formation with a hexagonal crystal structure P36mc, and the clear effect of the concentration of thiourea, cadmium sulfide, NaOH, time and temperature deposition, and annealing temperature, on the structure of the prepared thin films. through the study, we found that the samples have preferred orientation along [002], also the thickness of thin films decrease with deposition time after certain value, with the appearance of free cadmium. It has been found that the 200°C is the best temperature for annealing to improve the other structural and physical properties of films.


2016 ◽  
Vol 2016 ◽  
pp. 1-7
Author(s):  
Sarveswaran Thangarajan ◽  
Gopinathan Chellachamy ◽  
Saravanakumar Kulendran ◽  
Pandi Pitchai ◽  
Mahalakshmi Kandasamy

The growth and properties of cadmium sulfide (CdS) thin films were prepared in a controlled manner using chemical bath deposition (CBD) method for different KMnO4 activation time such as 5 min, 10 min, 15 min, 20 min, 25 min, and 30 min on glass substrates. CdS thin films are deposited on KMnO4 activated glass substrates at 85°C with pH value of 10 for 30 min deposition time. In the chemical bath deposition (CBD) technique, KMnO4 activation time plays an important role in the growth of the CdS film. The structure of the CdS film changes with respect to the rate of deposition. The size of the particles is affected by the nucleation rate if the solution does not contain the constant number of Cd2+ and S2− ions throughout the deposition process. This change in structure of CdS is confirmed by the XRD, SEM, and AFM analysis, and the ion-by-ion nucleation growth is also examined. The optical property of the prepared CdS thin film is scrutinized using UV-Vis-NIR absorption analysis.


2011 ◽  
Vol 364 ◽  
pp. 65-69
Author(s):  
Ayush Khare ◽  
R. B. Sahu

Nanocrystalline cadmium sulfide thin films are prepared using chemical bath deposition (CBD) technique in aqueous alkaline bath at 60 °C and their subsequent condensation on glass substrates. Effects of annealing on structural, morphological and optical properties are presented and discussed. The best annealing temperature for CBD grown CdS films is found to be 350 °C from optical properties. The optical and structural properties of CdS films are found to be sensitive to annealing temperature and are described in terms of XRD, SEM, transmission spectra and optical studies. The structural parameters such as crystallite size have been evaluated through XRD while SEM micrographs exhibit ordering of grains upon annealing. The transmission spectra shift towards higher wavelength upon annealing indicating increase in crystallinity. Annealing over 350 °C is found to degrade the external structure and optical properties of the film.


2012 ◽  
Vol 557-559 ◽  
pp. 1941-1944 ◽  
Author(s):  
Li Mei Zhou ◽  
Xiao Fei Hu ◽  
Su Mei Wu

CdS thin films were prepared by chemical-bath deposition (CBD) from a bath containing thiourea, acetic cadmium, ammonia and ammonium acetate in aqueous solution onto glass substrates at 80°C with stirring. The influence of pH value on the surface morphology and optical properties of the CdS thin films was investigated. Step height measurement instrument, scanning electron microscopy (SEM), X-ray diffraction (XRD), spectrophotometer and digital four-point probe resistance measurement were used to characterize their thickness, surface morphology, crystal structure, electrical and optical properties. Uniform CdS thin films were obtained when pH=11.6. There are obvious diffraction peaks at 26.04° when pH is 11.6. The transmittance increases as the pH values increase. The experiment show that pH value play a vital role in the properties of the CdS thin films.


2015 ◽  
Vol 9 (3) ◽  
pp. 2461-2469
Author(s):  
S. R. Gosavi ◽  
K. B. Chaudhari

CdS thin films were deposited on glass substrates by using successive ionic layer adsorption and reaction (SILAR) method at room temperature. The effect of SILAR growth cycles on structural, morphological, optical and electrical properties of the films has been studied.  The thickness of the deposited film is measured by employing weight difference method. The X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM) studies showed that all the films exhibit polycrystalline nature and are covered well with glass substrates. The values of average crystallite size were found to be 53 nm, 58 nm, 63 nm and 71 nm corresponding to the thin films deposited with 30, 40, 50 and 60 SILAR growth cycles respectively. From the UV–VIS spectra of the deposited thin films, it was seen that both the absorption properties and energy bandgap of the films changes with increasing number of SILAR growth cycles. A decrease of electrical resistivity has been observed with increasing SILAR growth cycle. 


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