SPIN-ORBIT ENHANCED POLARON IN A SINGLE QUANTUM WELL

2011 ◽  
Vol 25 (32) ◽  
pp. 2461-2468
Author(s):  
S. PANDA ◽  
B. K. PANDA
Keyword(s):  
Quantum Well ◽  
Orbit Coupling ◽  
Electron Interaction ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Rashba Spin ◽  
Asymmetric Quantum ◽  
Longitudinal Optic Phonon

The polaronic corrections to the electron energy and effective mass are calculated taking the Rashba spin-orbit coupling in the compositionally asymmetric single quantum well based on heterostructures of narrow gap semiconductors InGaAs and InAs . The electron interaction with the confined longitudinal optic phonon is considered in the Fröhlich form for calculating the polaron properties. In the weak coupling limit, the polaron properties are enhanced by the Rashba spin-orbit coupling in the asymmetric quantum well.

Field-assisted spin-polarized electron transport through a single quantum well with spin-orbit coupling

2012 ◽  
Vol 21 (3) ◽  
pp. 037302 ◽  
Author(s):  
Xiu-Huan Ding ◽  
Cun-Xi Zhang ◽  
Rui Wang ◽  
Yun-Qing Zhou ◽  
Ling-Min Kong
Keyword(s):  
Electron Transport ◽  
Quantum Well ◽  
Orbit Coupling ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Spin Polarized

Quantum well thickness dependence of Rashba spin–orbit coupling in the InAs/InGaAs heterostructure

2011 ◽  
Vol 98 (20) ◽  
pp. 202504 ◽  
Author(s):  
Tae Young Lee ◽  
Joonyeon Chang ◽  
Mark C. Hickey ◽  
Hyun Cheol Koo ◽  
Hyung-jun Kim ◽  
...  
Keyword(s):  
Quantum Well ◽  
Thickness Dependence ◽  
Orbit Coupling ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Rashba Spin

Effect of Hetero-Interfaces on Rashba Spin-Orbit Coupling in a Gated In0.53Ga0.47As/InP Quantum Well Structure

2011 ◽  
Vol 415-417 ◽  
pp. 1988-1991
Author(s):  
Yuan Ming Zhou
Keyword(s):  
Quantum Well ◽  
Gate Voltage ◽  
Coupling Parameter ◽  
Potential Profile ◽  
Orbit Coupling ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Interfacial Layers ◽  
Quantum Well Structure ◽  
Rashba Spin

We investigate the values of the Rashba spin-orbit coupling parameter α in a gated In0.53Ga0.47As/InP quantum well structure using the k•p formalism. With more positive gate voltage applied, the quantum well potential profile becomes more symmetric and the value of α decreases. The theoretical values of α are much smaller than experimental ones. The discrepancy can be reasonably explained by the neglect of the interface contribution in the k•p formalism and the formation of additional InAsxP1-xand GaxIn1-xAsyP1-yinterfacial layers in our sample.

scholarly journals Enhancement of Rashba spin–orbit coupling by electron–electron interaction

RSC Advances ◽  
2016 ◽  
Vol 6 (82) ◽  
pp. 78714-78719 ◽  
Author(s):  
Rouhollah Farghadan ◽  
Ali Sehat
Keyword(s):  
Electric Current ◽  
Orbit Coupling ◽  
Electron Interaction ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Output Current ◽  
Rashba Spin ◽  
Magnetic Elements ◽  
Spin Polarized

We studied how the electron–electron interaction enhances the strength of the Rashba spin–orbit coupling and opens the possibility of generating a spin-polarized output current from an unpolarized electric current without any magnetic elements.

scholarly journals Interplay of spin–orbit coupling and Coulomb interaction in ZnO-based electron system

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
D. Maryenko ◽  
M. Kawamura ◽  
A. Ernst ◽  
V. K. Dugaev ◽  
E. Ya. Sherman ◽  
...  
Keyword(s):  
Coulomb Interaction ◽  
High Mobility ◽  
Electron System ◽  
Orbit Coupling ◽  
Electron Interaction ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Strong Electron ◽  
Strongly Coupled ◽  
Dimensional Electron System

AbstractSpin–orbit coupling (SOC) is pivotal for various fundamental spin-dependent phenomena in solids and their technological applications. In semiconductors, these phenomena have been so far studied in relatively weak electron–electron interaction regimes, where the single electron picture holds. However, SOC can profoundly compete against Coulomb interaction, which could lead to the emergence of unconventional electronic phases. Since SOC depends on the electric field in the crystal including contributions of itinerant electrons, electron–electron interactions can modify this coupling. Here we demonstrate the emergence of the SOC effect in a high-mobility two-dimensional electron system in a simple band structure MgZnO/ZnO semiconductor. This electron system also features strong electron–electron interaction effects. By changing the carrier density with Mg-content, we tune the SOC strength and achieve its interplay with electron–electron interaction. These systems pave a way to emergent spintronic phenomena in strong electron correlation regimes and to the formation of quasiparticles with the electron spin strongly coupled to the density.

Strain Effects on Rashba Spin‐Orbit Coupling of 2D Hole Gases in GeSn/Ge Heterostructures

2021 ◽  
pp. 2007862
Author(s):  
Chia‐Tse Tai ◽  
Po‐Yuan Chiu ◽  
Chia‐You Liu ◽  
Hsiang‐Shun Kao ◽  
C. Thomas Harris ◽  
...  
Keyword(s):  
Orbit Coupling ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Strain Effects ◽  
Rashba Spin

scholarly journals Random Rashba spin-orbit coupling at the quantum spin Hall edge

2014 ◽  
Vol 89 (23) ◽  
Author(s):  
Florian Geissler ◽  
François Crépin ◽  
Björn Trauzettel
Keyword(s):  
Quantum Spin ◽  
Orbit Coupling ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Rashba Spin ◽  
Quantum Spin Hall
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