The Identification of Electrical Properties of Acupuncture Points for Asthma Diagnosis

The aim of this research is to identify the electrical potential profile on the acupoint betwen healthy people and the patient of asthma. The raw data has taken by recording the electrical potential profile on the acupoints: Feishu, Pishu, and Shenshu from 10 healthy women and the 10 women with asthma attain the age of 20-30 years old based on the second data observation at the Local Government Clinic Kalijudan, Surabaya. Potential profile of the organs were the electrical signals form. It was achieved by the result of electrical potential which was based time recording. Recording time was done for 180 second. The results couldn't be differentiated significantly, so it needs the other signals processing with FFT analyze method with cutting as the data frames. It was done every 5 second. Based on the result of analyzing the amplitude of each frequency group, the significant differences are on the acupoint Shenshu : 0-5 Hz with p= 0.001, on the acupoint Phishu 148-152 Hz with p= 0.010, on the acupoint Feishu for frequency 198-203 Hz with p= 0.004 and on the acuponit Phishu p=0.011, for frequency 348-352 Hz on the acupoint Feishu and Shenshu have both value is p= 0,004 and 398-402 Hz with p=0,009 on the acupoint Phishu. According to the preference, it was found that the electrical potential profile on the acupoints of the healthy people has lower amplitude than the people with asthma. Then, the analyze of electrical potential profile on the acupoints can be used for asthma diagnose.

Modeling the Choice of the Innovation and Investment Strategy for the Implementation of Modernization Potential

Since modernization challenges of microeconomic systems are implemented through strategic management of the modernization potential development of enterprises, the rationale for choosing an exclusive innovation and investment strategy is proposed. An algorithm for making managerial decisions based on the model of "preferences in the implementation of investment and innovation strategies" ("PIIIS") is built. The model is based on the concept of strategic management, economic and mathematical hierarchy of potential levels of cognitive judgment, optimization of resources on demand and the structure of innovation and investment strategies. This allows to ensure the efficiency and resource conservation of individual innovation and investment strategies in modernization potential of the enterprise. The sequence of establishing preferences of innovation and investment strategies for activating modernization potential of microeconomic systems is proposed. To model the process of granting preferences to innovation and investment strategies, a system of coefficients based on the potential profile level using cognitive judgments is substantiated. Resource-providing, accumulating, implementation and resulting levels of the modernization potential development are singled out. According to the profile levers, target tasks and alternatives of preferences of innovation and investment strategies for the modernization potential development are identified. Decomposition of tasks of granting preferences to innovation and investment strategies to intensify modernization potential of microeconomic systems is substantiated. It is proposed to use mathematical tools for the analysis of hierarchies, based on mathematical and cognitive judgments based on the T. Saaty model. Application of the Pareto model for the distribution of the coefficients influence in the effectiveness of the components analysis of the potential profile is presented. The choice of innovation and investment strategies for the modernization potential development for enterprises in the infrastructure sector of Ukraine is analyzed and determined.

Effect of Gate Metal Work-function on Junctionless (JL) Nanowire GAA MOSFET Performance

Metal gate technology is one of the promising methods used to increase the drain current by increasing the electrostatic controllability. Different metals have different work-function that controls the device performance very closely as gate to source voltage is the basic inputs for these. In this paper the dependency of gate metal work-function on device performance (both for nMOS and pMOS) is extensively investigated. The gate metal work-function value is taken as 4.2eV to 5.1eV with one increment to see the change in potential profile. With this condition, the IOn current, IOff current, threshold voltage, transconductance also calculated for these structures. A decrease value in drain current (1e-6 to 1e-7 A) is observed for both the cases with increase in work-function of gate metal. However, the Off current is getting better (1e-7 to 1e-18 A) while moving towards higher metal work-function values. As a result of which the IOn/IOff ratio increases which leads to higher device performances.