TEMPERATURE AND HYDROSTATIC PRESSURE DEPENDENCE OF SUBBAND STRUCTURE IN GaAs/AlxGa1−xAs MULTIPLE QUANTUM WELL
1990 ◽
Vol 04
(14)
◽
pp. 917-920
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Keyword(s):
The temperature and hydrostatic pressure dependence of GaAs/AlxGa1−xAs multiple quantum well subband structures has been examined theoretically. Such effects on the subband energy measured from the corresponding band optimum are negligible, and therefore, the temperature and the hydrostatic pressure coefficients of these multiple quantum wells are dominated by those coefficients of the bulk GaAs bandgap.
Keyword(s):
2003 ◽
Vol 50
(5)
◽
pp. 1179-1188
◽
Keyword(s):
1988 ◽
Vol 93
(1-4)
◽
pp. 323-328
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Keyword(s):