TIME-RESOLVED RAMAN STUDIES OF NON-EQUILIBRIUM EXCITATIONS IN GaAs-AlAs AND GaAs-AlxGa1−xAs MULTIPLE QUANTUM WELL STRUCTURES

1992 ◽  
Vol 06 (12) ◽  
pp. 703-716 ◽  
Author(s):  
K. T. TSEN

Recent experimental results obtained from time-resolved Raman studies in GaAs-AlAs and GaAs-Al x Ga 1−x As multiple quantum well structures are reviewed. Particular emphasis is made on (1) electron-phonon and phonon-phonon interactions and their association with the hot-phonon effects in the hot-carrier dynamics of multiple quantum well structures; and (2) the transport properties of photoexcited electron-hole plasma and excitons in semiconductor multiple quantum well structures.

Author(s):  
A.N. Cartwright ◽  
Paul M. Sweeney ◽  
Thomas Prunty ◽  
David P. Bour ◽  
Michael Kneissl

The presence of piezoelectric fields within p-i-n GaN/InGaN multiple quantum well structures is discussed. Time integrated and time-resolved photoluminescence measurements and theoretical calculations of the effect of these fields is presented. Furthermore, a description of how these fields influence the carrier dynamics and a discussion of how the piezoelectric field effects the design of GaN/InGaN devices is presented.


1988 ◽  
Vol 40-41 ◽  
pp. 585-586
Author(s):  
Zhongying Xu ◽  
Yuzhang Li ◽  
Jizong Xu ◽  
Baozhen Zheng ◽  
Junying Xu ◽  
...  

1990 ◽  
Vol 46 (2) ◽  
pp. 137-145 ◽  
Author(s):  
Weikun Ge ◽  
Zhongying Xu ◽  
Yuzhang Li ◽  
Zunying Xu ◽  
Jizhong Xu ◽  
...  

1993 ◽  
Vol 326 ◽  
Author(s):  
Xuelong Cao ◽  
Ahn Goo Choo ◽  
L. M. Smith ◽  
Howard E. Jackson ◽  
P. Chen ◽  
...  

1987 ◽  
Vol 36 (2) ◽  
pp. 1136-1139 ◽  
Author(s):  
H. Lobentanzer ◽  
H. -J. Polland ◽  
W. W. Rühle ◽  
W. Stolz ◽  
K. Ploog

1989 ◽  
Vol 55 (8) ◽  
pp. 772-774 ◽  
Author(s):  
M. Capizzi ◽  
C. Coluzza ◽  
A. Frova ◽  
U. Cebulla ◽  
A. Forchel

Physica B+C ◽  
1985 ◽  
Vol 134 (1-3) ◽  
pp. 509-513 ◽  
Author(s):  
R.A. Höpfel ◽  
J. Shah ◽  
A.C. Gossard ◽  
W. Wiegmann

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