A THEORETICAL AND EXPERIMENTAL STUDY OF ELECTRONIC CONFINEMENT, COUPLING, AND TRANSLAYER INTERACTION IN NOBLE-METAL QUANTUM-WELL STRUCTURES

1994 ◽  
Vol 08 (18) ◽  
pp. 1075-1096 ◽  
Author(s):  
W. E. MCMAHON ◽  
T. MILLER ◽  
T.-C. CHIANG

Noble-metal multilayer systems have been grown and examined with angle-resolved photoemission. Surface states, and single and double quantum wells have been studied experimentally; the results can be explained with a simple theoretical model based upon Bloch electrons. In this paper, we will present our model and then give a description of some experimental studies which utilize the model. In particular, we will consider double-quantum-well systems which can be used to examine basic aspects of electronic confinement, layer–layer coupling, and translayer interaction through a barrier.

1997 ◽  
Vol 484 ◽  
Author(s):  
Jie Dong ◽  
Akinoi Ubukata ◽  
Koh Matsumoto

AbstractIn this study, we demonstrate the growth of highly compressively strained InGaAs/JnGaAsP quantum well structures with large well thiclmess by low pressure metalorganic chemical vapor deposition for extending the emission wavelength of lasers. By comparing the photolumineswnce characteristics of quantum wells grown at different temperatures, it is clarified that a relatively high quality quantum well layer emittig at 2.0 μ, can be obtained at a growth temperature of 650°C. 1.95-μm-wavelength InGaAs/InGaAsP highly compressively strained quantum well DFB laser for laser spectroscopy monitors was also fabricated. Double quantum-well DFB laser operating at 1.95 μm exhibits threshold currents as low as 6 mA and 6.2 mW maximum output powers. 2.04-μm-wavelength DFB laser is also described.


2002 ◽  
Vol 744 ◽  
Author(s):  
Abdel-Rahman A. El-Emawy ◽  
Hongjun Cao ◽  
Noppadon Nuntawong ◽  
Chiyu Liu ◽  
Marek Osiński

ABSTRACTEffects of MOCVD growth parameters on structural and optical properties of double-quantum-well (DQW) structures containing uncoupled GaInNAs/GaAs and InGaAs/GaAs quantum wells have been investigated. By varying growth temperature, growth rate, V/III ratio, and DMHy flow rates, we have achieved a longer-wavelength emission from a GaInNAs well than from an InGaAs well grown in the same structure. GaInNAs/GaAs multiple-quantum-well structures grown under optimum conditions emitted at 1.25 μm.


2004 ◽  
Vol 03 (04n05) ◽  
pp. 541-547
Author(s):  
I. Yu. GOLINEY ◽  
S. B. LEV ◽  
V. I. SUGAKOV ◽  
G. V. VERTSIMAKHA

Magnetic field dependence of the excitonic spectrum and the intensity of the optical transitions for excitons in the double quantum well heterostructures based on semimagnetic semiconductors of various compositions are studied. The calculations carried out for (Zn, Mn)Se -based double quantum well structures showed that in the weak magnetic fields, the lowest energy states are the single-well states (direct excitons) for which both the electron and the hole are predominantly localized in the same well. At some values of magnetic field, the crossing of the direct exciton with indirect exciton formed by an electron and a hole, situated predominantly in the different wells, occurs. In the magnetic field exceeding some critical value, the lowest energy level belongs to the indirect exciton. According to the estimates, the lifetime of the indirect exciton is by several orders of magnitude larger than that of a single-well exciton. The exciton lifetime depends significantly on the width and the material of the barrier between the wells.


1993 ◽  
Vol 03 (C5) ◽  
pp. 401-404 ◽  
Author(s):  
S. J. WESTON ◽  
J. E. NICHOLLS ◽  
M. O'NEILL ◽  
T. STIRNER ◽  
P. HARRISON ◽  
...  

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