REAL SPACE IMAGING OF SURFACES BY MEANS OF BACKSCATTERED ELECTRONS

1994 ◽  
Vol 08 (28) ◽  
pp. 1759-1769 ◽  
Author(s):  
M. Erbudak ◽  
M. Hochstrasser ◽  
E. Wetli
Keyword(s):  
Short Range ◽  
Short Range Order ◽  
Secondary Electron ◽  
Three Dimensional ◽  
Real Space ◽  
Range Order ◽  
Material System ◽  
Near Surface ◽  
Backscattered Electrons ◽  
Electron Imaging

Secondary electron imaging (SEI) is presented as a new method which allows the investigation of the near surface structure in real time. SEI is based on the observation that electrons backscattered from surfaces in the keV range show a strong enhancement of intensity along directions defined by atomic rows. The spatial imaging of such electrons reveals the symmetry of near surface regions in real space. Three-dimensional views of the solid are readily obtained which makes this method ideally suited for the study of any material system where there is a change of symmetry. SEI is especially useful for the investigation of surfaces with short range order, such as those with submonolayer coverages of growing films, and of quasicrystals possessing only rotational long range order.

INVESTIGATION OF SYMMETRY PROPERTIES OF SURFACES BY MEANS OF BACKSCATTERED ELECTRONS

1997 ◽  
Vol 04 (01) ◽  
pp. 179-196 ◽  
Author(s):  
M. ERBUDAK ◽  
M. HOCHSTRASSER ◽  
E. WETLI ◽  
M. ZURKIRCH
Keyword(s):  
Surface Structure ◽  
Secondary Electron ◽  
Three Dimensional ◽  
Practical Method ◽  
Real Space ◽  
Material System ◽  
Near Surface ◽  
Backscattered Electrons ◽  
Symmetry Properties ◽  
Electron Imaging

Secondary-electron imaging is presented as a practical method which allows investigation of the near-surface structure in real time. It is based on the observation that electrons backscattered from surfaces in the keV range show a strong enhancement of intensity along directions defined by atomic rows. The spatial imaging of such electrons reveals the symmetry of near-surface regions in real space. Three-dimensional views of the solid are readily obtained, which makes this method ideally suited for the study of unknown structures and any material system where there is a change of symmetry.

Short-range ordering of Cu3Au above Tc in the topmost 80 A of a (001) face

1997 ◽  
Vol 12 (1) ◽  
pp. 75-82 ◽  
Author(s):  
M. Kimura ◽  
J. B. Cohen ◽  
S. Chandavarkar ◽  
K. Liang
Keyword(s):  
Short Range ◽  
Short Range Order ◽  
Surface Region ◽  
Antiphase Domain ◽  
Range Order ◽  
Two Dimensional ◽  
X Ray Diffraction ◽  
Diffuse Intensity ◽  
Near Surface ◽  
Atomic Displacements

The short-range order in the near surface region of the Cu3Au(001) face was investigated above the critical temperature by glancing-incidence x-ray diffraction, measuring the diffuse intensity throughout a two-dimensional region of reciprocal space. This intensity was analyzed quantitatively to obtain the two-dimensional Cowley–Warren short-range-order parameters and atomic displacements. Monte-Carlo simulation based on these values has revealed that the atomic configurations in the surface consist of ordered domains and clusters in a disordered matrix. There is a large number of {10} antiphase domain boundaries (APDB).

Near-surface and bulk short-range order inCu3Au

1995 ◽  
Vol 52 (14) ◽  
pp. 9955-9963 ◽  
Author(s):  
I. K. Robinson ◽  
P. J. Eng
Keyword(s):  
Short Range ◽  
Short Range Order ◽  
Range Order ◽  
Near Surface

scholarly journals Real-space characterization of short-range order in Cu-Pd alloys

1997 ◽  
Vol 55 (21) ◽  
pp. 14173-14181 ◽  
Author(s):  
M. Rodewald ◽  
K. Rodewald ◽  
P. De Meulenaere ◽  
G. Van Tendeloo
Keyword(s):  
Short Range ◽  
Short Range Order ◽  
Real Space ◽  
Range Order ◽  
Space Characterization

scholarly journals Photonic band gaps in three-dimensional network structures with short-range order

2011 ◽  
Vol 84 (6) ◽  
Author(s):  
Seng Fatt Liew ◽  
Jin-Kyu Yang ◽  
Heeso Noh ◽  
Carl F. Schreck ◽  
Eric R. Dufresne ◽  
...  
Keyword(s):  
Short Range ◽  
Short Range Order ◽  
Three Dimensional ◽  
Range Order ◽  
Band Gaps ◽  
Network Structures ◽  
Photonic Band Gaps ◽  
Dimensional Network ◽  
Photonic Band

Correlation Between Phototransport and Network Order in a-Si:H

1995 ◽  
Vol 377 ◽  
Author(s):  
G. Morell ◽  
R. S. Katiyar ◽  
S. Z. Weisz ◽  
H. Jia ◽  
J. Shinar ◽  
...  
Keyword(s):  
Raman Spectra ◽  
Short Range ◽  
Short Range Order ◽  
Rf Sputtering ◽  
Range Order ◽  
Near Surface ◽  
Intermediate Range ◽  
Structural Differences ◽  
Comprehensive Comparison ◽  
Deposition Processes

ABSTRACTHydrogenated amorphous silicon (a-Si:H) films prepared by the glow discharge (GD) technique show superior optoelectronic properties over those prepared by rf sputtering (RFS). To find out whether this is associated to structural differences in the amorphous network, we have carried out a comprehensive comparison of the Raman spectra of the two types of films grown at different substrate temperatures. The use of two properly chosen excitation radiations allowed the observation of the Raman spectra from the near surface versus that from the bulk of the films. The results show that the short-range order in the bulk of GD films is close to that of the ideal tetrahedral network, having an rms bond angle deviation (Δθ) of ≈9°. In contrast, the smallest value of Δθfound in the RFS films was ≈15°. There is also a short-range order inhomogeneity in both sets of materials that can be reduced significantly by selecting the appropriate substrate temperature. The intermediate-range disorder is relatively small and uniform in GD films, while large differences exist in this parameter between the surface and bulk of RFS films. In general, the results indicate that the short-range order and the inhomogeneity in intermediate-range order present in the RFS films cannot be improved to equal those of GD materials by annealing at temperatures low enough that no substantial hydrogen effusion occurs. These structural differences are argued to be the reasons for the superior phototransport properties of GD over RFS materials and are interpreted in terms of the differences between the two deposition processes.

scholarly journals Short-range order of Br and three-dimensional magnetism in (CuBr)LaNb2O7

2012 ◽  
Vol 85 (21) ◽  
Author(s):  
Alexander A. Tsirlin ◽  
Artem M. Abakumov ◽  
Clemens Ritter ◽  
Paul F. Henry ◽  
Oleg Janson ◽  
...  
Keyword(s):  
Short Range ◽  
Short Range Order ◽  
Three Dimensional ◽  
Range Order
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