An Efficient Flash Translation Layer for Large Block NAND Flash Devices

2015 ◽  
Vol 24 (09) ◽  
pp. 1550138 ◽  
Author(s):  
Tae-Sun Chung ◽  
Dong-Joo Park ◽  
Jongik Kim

Recently, flash memory is widely used as a non-volatile storage for embedded applications such as smart phones, MP3 players, digital cameras and so on. The software layer called flash translation layer (FTL) becomes more important since it is a key factor in the overall flash memory system performance. Many researchers have proposed FTL algorithms for small block flash memory in which the size of a physical page of flash memory is equivalent to the size of a data sector of the file system. However, major flash vendors have now produced large block flash memory in which the size of a physical page is larger than the file system's data sector size. Since large block flash memory has new features, designing FTL algorithms specialized to large block flash memory is a challenging issue. In this paper, we provide an efficient FTL named LSTAFF* for large block flash memory. LSTAFF* is designed to achieve better performance by using characteristics of large block flash memory and to provide safety by abiding by restrictions of large block flash memory. Experimental results show that LSTAFF* outperforms existing algorithms on a large block flash memory.

2013 ◽  
Vol 464 ◽  
pp. 365-368 ◽  
Author(s):  
Ji Jun Hung ◽  
Kai Bu ◽  
Zhao Lin Sun ◽  
Jie Tao Diao ◽  
Jian Bin Liu

This paper presents a new architecture SSD based on NVMe (Non-Volatile Memory express) protocol. The NVMe SSD promises to solve the conventional SATA and SAS interface bottleneck. Its aimed to present a PCIe NAND Flash memory card that uses NAND Flash memory chip as the storage media. The paper analyzes the PCIe protocol and the characteristics of SSD controller, and then gives the detailed design of the PCIe SSD. It mainly contains the PCIe port and Flash Translation Layer.


SPIN ◽  
2012 ◽  
Vol 02 (01) ◽  
pp. 1230001 ◽  
Author(s):  
CHIH-YUAN LU

Flash memory has served as an important technology driver due to its many new applications. Despite the fact that NAND flash has out run lithography and other scaling barriers and thus is facing steep challenges, several innovative solutions are being developed to carry its momentum, and it continues to serve as a technology driver in the nanoelectronics era. New devices that are not based on charge storage, on the other hand, are promising to further boost system performance by offering low-power, high-density, and fast latency storage. These new developments should provide the next generation memory and storage solutions that will elevate system performance to a new level.


2013 ◽  
pp. 439-455 ◽  
Author(s):  
Pierre Olivier ◽  
Jalil Boukhobza ◽  
Eric Senn

NAND Flash memories gained a solid foothold in the embedded systems domain due to its attractive characteristics in terms of size, weight, shock resistance, power consumption, and data throughput. Moreover, flash memories tend to be less confined to the embedded domain, as it can be observed through the market explosion of flash-based storage systems (average growth of the NVRAM is reported to be about 69% up to 2015). In this chapter, the authors focus on NAND flash memory NVRAM. After a global presentation of its architecture and very specific constraints, they describe the different ways to manage flash memories in embedded systems which are 1) the use of a hardware Flash Translation Layer (FTL), or 2) a dedicated Flash File System (FFS) software support implemented within the embedded operating system kernel.


2018 ◽  
Vol 11 (23) ◽  
pp. 1-7 ◽  
Author(s):  
Shailesh Kumar ◽  
Kumkum Dubey ◽  
P.K. Singh ◽  
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