A STUDY FOR ANODIC OXIDE FILMS OF GaAs BY RADIOACTIVATION ANALYSIS

2001 ◽  
Vol 08 (03n04) ◽  
pp. 245-249
Author(s):  
K. YOKOTA ◽  
K. NAKAMURA ◽  
S. TAMURA ◽  
S. ISHIHARA ◽  
I. KIMURA

Gallium arsenide was anodically oxidized in a mixture of ethylene glycol and tartaric acid as an electrolyte. The numbers of Ga and As atoms in the anodic oxide films and in the used electrolytes were measured by radioactivation analysis. During the anodic oxidation, GaAs dissolved into the electrolyte. The numbers of Ga and As atoms that dissolved into the electrolytes was proportional to the anodic voltage, and the number of Ga atoms in the electrolyte was about five times more than that of As atoms. The composition of the anodic oxide films varied with depth. However, the atomic profiles measured by Auger electron spectroscopy displayed As atoms much less than Ga atoms throughout the anodic oxide films, because Ga oxides were lost from the anodic oxide films into the vacuum during the Auger electron spectroscopy, accompanying sputtered thin film removal.

1989 ◽  
Vol 4 (2) ◽  
pp. 404-407 ◽  
Author(s):  
M. Iqbal Chaudhry

Thermal and anodic oxide films of beta silicon carbide are analyzed using Auger electron spectroscopy. Auger depth-composition profiles are obtained in order to determine the chemical composition of the oxide films. The position and shape of silicon spectral peaks are used to estimate the chemical bonding of the oxide constituents. It is found that the wet thermal oxide is almost stoichiometric but contains about 14% carbon. Dry oxide, on the other hand, has less than 3% carbon but is highly nonstoichiometric. The carbon content in the anodic oxide is 12%. Anodic oxide films, like dry-oxide films, are nonstoichiometric. A model of the SiC oxidation process is presented.


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