SURFACE TOPOGRAPHY ON EPITAXIAL HoBa2Cu3O7-δ AND Bi2Sr2CaCu2O8+δ THIN FILMS

2002 ◽  
Vol 09 (05n06) ◽  
pp. 1729-1733
Author(s):  
W. LOPERA ◽  
D. GIRATÁ ◽  
F. PÉREZ ◽  
L. F. CASTRO ◽  
E. BACA ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
High Pressure ◽  
Surface Morphology ◽  
Surface Topography ◽  
Chemical Etching ◽  
Film Surface ◽  
Force Microscopy ◽  
Atomic Force

Surface topography on epitaxial HoBa 2 Cu 3 O 7-δ (HBCO) and Bi 2 Sr 2 CaCu 2 O 8+δ (BSCCO) thin films analysis by using the atomic force microscopy (AFM) technique was carried out. The films were deposited in situ on SrTiO 3 substrates with thicknesses ranging from 100 to 300 nm by a high-pressure sputtering process. Chemical etching with a nonaqueous solution of Br-ethanol was used to modify the surface of the samples. HBCO films showed spiral grains, while BSCCO samples exhibited a terraced growth. Etching with Br-ethanol has different effects on HBCO and BSCCO. In HBCO, etching produces clean surfaces with light changes on the surface morphology, whereas in BSCCO it conduces to strong changes in the structure and the roughness of the film surface.

Atomic force microscopy surface morphology studies of ‘in situ’ deposited polyaniline thin films

1995 ◽  
Vol 73 (3) ◽  
pp. 205-208 ◽  
Author(s):  
Jamshid K. Avlyanov ◽  
Jack Y. Josefowicz ◽  
Alan G. MacDiarmid
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Surface Morphology ◽  
Force Microscopy ◽  
Atomic Force

Atomic force microscopy of in situ deformed nickel thin films

1999 ◽  
Vol 353 (1-2) ◽  
pp. 194-200 ◽  
Author(s):  
C. Coupeau ◽  
J.F. Naud ◽  
F. Cleymand ◽  
P. Goudeau ◽  
J. Grilhé
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Force Microscopy ◽  
Nickel Thin Films ◽  
Atomic Force

Surface morphology of As-deposited and laser-damaged dielectric mirror coatings studied in-situ by atomic force microscopy

1992 ◽  
Author(s):  
Mark R. Kozlowski ◽  
Michael C. Staggs ◽  
Mehdi Balooch ◽  
Robert J. Tench ◽  
Wigbert J. Siekhaus
Keyword(s):  
Atomic Force Microscopy ◽  
Surface Morphology ◽  
Force Microscopy ◽  
Dielectric Mirror ◽  
Atomic Force

Chromic Polydiacetylene Single Crystals: Atomic Force Microscopy Studies

1995 ◽  
Vol 413 ◽  
Author(s):  
V. Shivshankar ◽  
C. Sung ◽  
J. Kumar ◽  
S. K. Tripathy ◽  
D. J. Sandman
Keyword(s):  
Atomic Force Microscopy ◽  
Surface Morphology ◽  
Single Crystals ◽  
Ambient Conditions ◽  
Free Standing ◽  
Force Microscopy ◽  
Sensor Performance ◽  
Atomic Force ◽  
Variable Surface

ABSTRACTWe have studied the surface morphology of free standing single crystals of thermochromic polydiacetylenes (PDAs), namely, ETCD and IPUDO (respectively, the ethyl and isopropyl urethanes of 5,7-dodecadiyn-1,12-diol), by Atomic Force Microscopy (AFM) under ambient conditions. Micron scale as well as molecularly resolved images were obtained. The micron scale images indicate a variable surface, and the molecularly resolved images show a well defined 2-D lattice that is interpreted in terms of molecular models and known crystallographic data. Thereby information about surface morphology, which is crucial to potential optical device or chromic sensor performance is available. We also report the observation of a “macroscopic shattering” of the IPUDO monomer crystal during in-situ UV polymerization studies.

Scanning Tunneling Microscopy and Atomic Force Microscopy Investigation of Organic Tetracyanoquinodimethane Thin Films

1997 ◽  
Vol 12 (8) ◽  
pp. 1942-1945 ◽  
Author(s):  
H. J. Gao ◽  
H. X. Zhang ◽  
Z. Q. Xue ◽  
S. J. Pang
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Scanning Tunneling Microscopy ◽  
Pyrolytic Graphite ◽  
Film Surface ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Microscopy Investigation

Scanning tunneling microscopy (STM) and atomic force microscopy (AFM) investigation of tetracyanoquinodimethane (TCNQ) and the related C60-TCNQ thin films is presented. Periodic molecular chains of the TCNQ on highly oriented pyrolytic graphite (HOPG) substrates were imaged, which demonstrated that the crystalline (001) plane was parallel to the substrate. For the C60-TCNQ thin films, we found that there were grains on the film surface. STM images within the grain revealed that the well-ordered rows and terraces, and the parallel rows in different grains were generally not in the same orientation. Moreover, the grain boundary was also observed. In addition, AFM was employed to modify the organic TCNQ film surface for the application of this type of materials to information recording and storage at the nanometer scale. The nanometer holes were successfully created on the TCNQ thin film by the AFM.

scholarly journals Combined pulsed laser deposition and non-contact atomic force microscopy system for studies of insulator metal oxide thin films

2018 ◽  
Vol 9 ◽  
pp. 686-692 ◽  
Author(s):  
Daiki Katsube ◽  
Hayato Yamashita ◽  
Satoshi Abo ◽  
Masayuki Abe
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Metal Oxide ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Film Surface ◽  
Laser Deposition ◽  
Combined System ◽  
Force Microscopy ◽  
Atomic Force

We have designed and developed a combined system of pulsed laser deposition (PLD) and non-contact atomic force microscopy (NC-AFM) for observations of insulator metal oxide surfaces. With this system, the long-period iterations of sputtering and annealing used in conventional methods for preparing a metal oxide film surface are not required. The performance of the combined system is demonstrated for the preparation and high-resolution NC-AFM imaging of atomically flat thin films of anatase TiO2(001) and LaAlO3(100).

Atomic force microscopy studies of ZnS films grown on (100) GaAs by the successive ionic layer adsorption and reaction method

1998 ◽  
Vol 13 (6) ◽  
pp. 1688-1692 ◽  
Author(s):  
Mika P. Valkonen ◽  
Seppo Lindroos ◽  
Tapio Kanniainen ◽  
Markku Leskelä ◽  
Roland Resch ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Force Microscopy ◽  
Atomic Force ◽  
Layer Adsorption ◽  
Silar Technique ◽  
Ionic Layer

In this study zinc sulfide thin films were grown by the successive ionic layer adsorption and reaction (SILAR) technique on (100) GaAs substrates from aqueous precursor solutions. The atomic force microscopy (AFM) method was used to study the growth of the films up to a thickness of 180 nm. The ZnS thin films on (100) GaAs were smooth with an rms roughness of 0.2–1.9 nm depending on the film thickness. After the GaAs surface was covered with ZnS, the growth appeared to be nearly layerwise. In addition, in situ AFM studies were carried out to analyze the dissolution of (100) GaAs in water, which is a process competing with the thin film deposition by the SILAR.

Sign in / Sign up

Export Citation Format

Share Document