COMPARISON OF MAGNETIC PROPERTY OF Cu-, Al-, AND Li-DOPED ZnO DILUTE MAGNETIC SEMICONDUCTOR THIN FILMS

The properties of Cu -, Al -, and Li -doped ZnO dilute magnetic semiconductor (DMS) have been analyzed and compared. Zincite with wurtzite structures have been synthesized successfully on SiO 2 (101) and SiO 2 (110) substrates in both the Cu – ZnO and Li – ZnO DMS. The highly textured ZnO (002) peaks were able to form in the Cu – ZnO system at 400°C. However, it formed at even much lower temperature in the Li – ZnO system, that is only 25°C. ZnO (002) peaks in both systems were formed without any impurity phases. However, no crystalline structure is synthesized in the Al – ZnO system. The thin films formed are amorphous. The structural and related magnetic properties of the films were analyzed by XRD, AFM, and VSM. The films were found to be at their highest magnetism at the value of 3.1 emu/cm3 for Co – ZnO and 2.5 emu/cm3 for Li – ZnO , synthesized at 400°C, and under 1 × 10-4 Torr oxygen partial pressure.