scholarly journals Influence of oxygen partial pressure on the microstructural and magnetic properties of Er-doped ZnO thin films

AIP Advances ◽  
2015 ◽  
Vol 5 (6) ◽  
pp. 067105 ◽  
Author(s):  
Wei-Bin Chen ◽  
Xue-Chao Liu ◽  
Fei Li ◽  
Hong-Ming Chen ◽  
Ren-Wei Zhou ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Zno Thin Films ◽  
Doped Zno ◽  
Er Doped

COMPARISON OF MAGNETIC PROPERTY OF Cu-, Al-, AND Li-DOPED ZnO DILUTE MAGNETIC SEMICONDUCTOR THIN FILMS

2008 ◽  
Vol 15 (01n02) ◽  
pp. 81-85 ◽  
Author(s):  
L. H. VAN ◽  
J. DING ◽  
M. H. HONG ◽  
Z. C. FAN ◽  
L. WANG
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Magnetic Property ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Dilute Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Semiconductor Thin Films ◽  
Doped Zno ◽  
Lower Temperature

The properties of Cu -, Al -, and Li -doped ZnO dilute magnetic semiconductor (DMS) have been analyzed and compared. Zincite with wurtzite structures have been synthesized successfully on SiO 2 (101) and SiO 2 (110) substrates in both the Cu – ZnO and Li – ZnO DMS. The highly textured ZnO (002) peaks were able to form in the Cu – ZnO system at 400°C. However, it formed at even much lower temperature in the Li – ZnO system, that is only 25°C. ZnO (002) peaks in both systems were formed without any impurity phases. However, no crystalline structure is synthesized in the Al – ZnO system. The thin films formed are amorphous. The structural and related magnetic properties of the films were analyzed by XRD, AFM, and VSM. The films were found to be at their highest magnetism at the value of 3.1 emu/cm3 for Co – ZnO and 2.5 emu/cm3 for Li – ZnO , synthesized at 400°C, and under 1 × 10-4 Torr oxygen partial pressure.

Effect of oxygen partial pressure ratios on the properties of Al–N co-doped ZnO thin films

2005 ◽  
Vol 274 (1-2) ◽  
pp. 178-182 ◽  
Author(s):  
Zhi-zhen Ye ◽  
Qing Qian ◽  
Guo-Dong Yuan ◽  
Bing-Hui Zhao ◽  
De-Wei Ma
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Zno Thin Films ◽  
Doped Zno ◽  
Effect Of Oxygen ◽  
Co Doped

Dependence of ferromagnetic properties on growth oxygen partial pressure in boron-doped ZnO thin films

2012 ◽  
Vol 47 (18) ◽  
pp. 6513-6516 ◽  
Author(s):  
Hailing Yang ◽  
Xiaoguang Xu ◽  
Xiaoye Zhou ◽  
Yannan Ma ◽  
Jing Dong ◽  
...  
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Zno Thin Films ◽  
Ferromagnetic Properties ◽  
Boron Doped ◽  
Doped Zno
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