Monolayer Nitrogen Atom Incorporation at Buried Si-SiO2 Interfaces: Preparation by Remote Plasma Oxidation/Nitridation and Characterization by On-Line Auger Electron Spectroscopy

1998 ◽  
Vol 05 (01) ◽  
pp. 167-173 ◽  
Author(s):  
G. Lucovsky ◽  
H Niimi ◽  
K. Koh ◽  
M. L. Green
Keyword(s):  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Experimental Studies ◽  
Reaction Pathways ◽  
Remote Plasma ◽  
Process Dynamics ◽  
Conventional Furnace ◽  
On Line ◽  
Remote Plasma Oxidation

This paper presents experimental studies in which N-atoms have been incorporated at Si-SiO 2 interfaces by forming the interface and oxide film by a 300°C remote-plasma-assisted nitridation/oxidation process using N 2 O . Process dynamics have been studied by on-line Auger electron spectroscopy (AES) by interrupted plasma processing. Based on AES studies using N 2 O , O 2 and sequenced N 2 O and O 2 source gases, reaction pathways for (i) N-atom incorporation at and/or (ii) removal from buried Si-SiO 2 interfaces have been identified, and contrasted with reaction pathways for nitridation using conventional furnace processing.

Reaction Pathways for Nitrogen Incorporation at Si-SiO2 Interfaces

1996 ◽  
Vol 446 ◽  
Author(s):  
K. Koh ◽  
H. Niimi ◽  
G. Lucovsky
Keyword(s):  
Optical Emission Spectroscopy ◽  
Oxidation Process ◽  
Experimental Studies ◽  
Optical Emission ◽  
Active Species ◽  
Reaction Pathways ◽  
Process Dynamics ◽  
Conventional Furnace ◽  
On Line

AbstractThis paper presents experimental studies in which N-atoms have been incorporated at Si-SiO2 interfaces by forming the interface and oxide film by a 300°C remote plasma assisted nitridation/oxidation process using N2O. Process dynamics have been studied by on-line Auger electron spectroscopy (AES) by interrupted plasma processing. Plasma-activated species have been identified by in-situ mass spectrometry (MS) and optical emission spectroscopy (OES). Based on AES studies using N2O, O2 and sequenced N2O and O2 source gases, reaction pathways for N-atom incorporation i) at and/or ii) removal from buried Si-SiO2 interfaces have been identified, and contrasted with reaction pathways for nitridation using conventional furnace processing. The active species for N-atom incorporation is NO+, and for oxide growth, O2.

Quasi-Stoichiometric Silicon Nitride Thin Films Deposited by Remote Plasma-Enhanced Chemical-Vapor Deposition

1992 ◽  
Vol 284 ◽  
Author(s):  
G. Lucovsky ◽  
Y. Ma ◽  
S. S. He ◽  
T. Yasuda ◽  
D. J. Stephens ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Chemical Vapor ◽  
Electrical Performance ◽  
Remote Plasma ◽  
Silicon Nitride Films ◽  
On Line

ABSTRACTConditions for depositing quasi-stoichiometric silicon nitride films by low-temperature, remote plasma-enhanced chemical-vapor deposition, RPECVD, have been identified using on-line Auger electron spectroscopy, AES, and off-line optical and infrared, IR, spectroscopies. Quasi-stoichiometric films, by the definition propose in this paper, do not display spectroscopic evidence for Si-Si bonds, but contain bonded-H in Si-H and Si-NH arrangements. Incorporation of RPECVD nitrides into transistor devices has demonstrated that electrical performance is optimized when the films are quasi-stoichiometric with relatively low Si-NH concentrations.

The formation of low temperature Cu3Si in Ag(Cu)/Si structure upon annealing and its effects on adhesion and resistivity

2003 ◽  
Vol 766 ◽  
Author(s):  
Sungjin Hong ◽  
Seob Lee ◽  
Yeonkyu Ko ◽  
Jaegab Lee
Keyword(s):  
Low Temperature ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Si Substrate ◽  
Copper Silicide ◽  
Alloy Films ◽  
Cu Alloy ◽  
Cu Film ◽  
Rapid Drop

AbstractThe annealing of Ag(40 at.% Cu) alloy films deposited on a Si substrate at 200 – 800 oC in vacuum has been conducted to investigate the formation of Cu3Si at the Ag-Si interface and its effects on adhesion and resistivity of Ag(Cu)/Si structure. Auger electron spectroscopy(AES) analysis showed that annealing at 200°C allowed a diffusion of Cu to the Si surface, leading to the significant reduction in Cu concentration in Ag(Cu) film and thus causing a rapid drop in resistivity. In addition, the segregated Cu to the Si surface reacts with Si, forming a continuous copper silicide at the Ag(Cu)/Si interface, which can contribute to an enhanced adhesion of Ag(Cu)/Si annealed at 200 oC. However, as the temperature increases above 300°C, the adhesion tends to decrease, which may be attributed to the agglomeration of copper silicide beginning at around 300°C.

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