Scanning Tunneling Microscopy Study of Single Domain β-SiC(100) Surfaces: Growth and Morphology
1998 ◽
Vol 05
(01)
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pp. 207-211
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Keyword(s):
We investigate single domain β-SiC(100) thin film surfaces epitaxially grown on a vicinal (4°) Si(100) surface by atom-resolved (filled and empty states) scanning tunneling microscopy (STM). Contrary to previous beliefs, we observe high quality surfaces having a low density of defects. The β-SiC(100)-(3×2) surface, which is a Si-rich surface, is achieved by sequences of Si deposition and surface annealings. This results in the growth and coalescence of large Si islands and/or vacancies islands having the 3×2 array. Our results indicate the formation of asymmetric Si-Si dimers all tilted in the same direction and forming rows in a 3×2 arrangement at a 1/3 Si mon/layer coverage.
2006 ◽
Vol 294
(2)
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pp. 179-183
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1989 ◽
Vol 63
(17)
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pp. 1830-1832
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2013 ◽
Vol 112
◽
pp. 831-837
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