Iron Carbidization on Thin-Film Silica and Silicon: A Near-Ambient-Pressure X-ray Photoelectron Spectroscopy and Scanning Tunneling Microscopy Study

ACS Catalysis ◽  
2018 ◽  
Vol 8 (8) ◽  
pp. 7326-7333 ◽  
Author(s):  
Xiong Zhou ◽  
Gilbère J. A. Mannie ◽  
Junqing Yin ◽  
Xin Yu ◽  
C. J. Weststrate ◽  
...  
1998 ◽  
Vol 05 (01) ◽  
pp. 207-211 ◽  
Author(s):  
F. Semond ◽  
L. Douillard ◽  
P. Soukiassian ◽  
A. Mayne ◽  
G. Dujardin ◽  
...  

We investigate single domain β-SiC(100) thin film surfaces epitaxially grown on a vicinal (4°) Si(100) surface by atom-resolved (filled and empty states) scanning tunneling microscopy (STM). Contrary to previous beliefs, we observe high quality surfaces having a low density of defects. The β-SiC(100)-(3×2) surface, which is a Si-rich surface, is achieved by sequences of Si deposition and surface annealings. This results in the growth and coalescence of large Si islands and/or vacancies islands having the 3×2 array. Our results indicate the formation of asymmetric Si-Si dimers all tilted in the same direction and forming rows in a 3×2 arrangement at a 1/3 Si mon/layer coverage.


2014 ◽  
Vol 89 (15) ◽  
Author(s):  
Sven Runte ◽  
Predrag Lazić ◽  
Chi Vo-Van ◽  
Johann Coraux ◽  
Jörg Zegenhagen ◽  
...  

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