COBALT(II)/NICKEL(II) COMPLEXES OF DITHIOACETYLACETONE [M(SacSac)2](M = Co, Ni) AS SINGLE SOURCE PRECURSORS FOR COBALT/NICKEL SULFIDE NANOSTRUCTURES

2011 ◽  
Vol 10 (04n05) ◽  
pp. 815-822 ◽  
Author(s):  
KARTHIK RAMASAMY ◽  
WEERAKANYA MANEEPRAKORN ◽  
NASIR IQBAL ◽  
MOHAMMAD AZAD MALIK ◽  
PAUL O'BRIEN

Cobalt(II)/Nickel(II) complexes of 4-thiopent-3-ene-2-thione (SacSac), [ M(SacSac) 2]( M = Co, Ni ) have been used as single source precursors (SSPs) for the preparation of cobalt/nickel sulfide thin films by aerosol-assisted chemical vapor deposition (AACVD). Cobalt or nickel sulfide nanoparticles were grown by thermal decomposition of the precursor in hot trioctylphosphine oxide (TOPO) or hexadecylamine (HDA). XRD analysis showed that all samples of cobalt or nickel sulfide are of the sulfur deficient phases ( Ni9S8, Co9S8, Ni7S6 , or Ni3S2 ). SEM and TEM analysis showed that nickel sulfide formed nanowires, nanorods and spheres; cobalt sulfide formed plate like structures and spheres. The chemical compositions of the nanoparticles can be controlled by varying temperature or the capping agents.

2008 ◽  
Vol 20 (19) ◽  
pp. 6157-6162 ◽  
Author(s):  
Naveed Alam ◽  
Michael S. Hill ◽  
Gabriele Kociok-Köhn ◽  
Matthias Zeller ◽  
Muhammad Mazhar ◽  
...  

1999 ◽  
Vol 606 ◽  
Author(s):  
Mike R. Lazell ◽  
Paul O'brien ◽  
David J. Otway ◽  
Jin-Ho Park

AbstractSeveral single-source precursors including In(SOCNiBu2)3, In(S2CNMeHex)3 and Ga(S2CNMeR)3, (R = Et, Bu, Hex) have been prepared and used for the deposition of Group 13 metal sulfide thin films. The α and β-In2S3thin films on borosilicate glass and oc-Ga 2S3thin films on GaAs(111) single crystal substrates were prepared from the precursors by various chemical vapour deposition (CVD) techniques. These semicondcuting materials have been characterized by XRD, SEM, XPS and EDAX.


2019 ◽  
Vol 58 (4) ◽  
pp. 2784-2797 ◽  
Author(s):  
Hannah S. I. Sullivan ◽  
James D. Parish ◽  
Prem Thongchai ◽  
Gabriele Kociok-Köhn ◽  
Michael S. Hill ◽  
...  

2005 ◽  
Vol 116 (3) ◽  
pp. 395-401 ◽  
Author(s):  
Michael H.-C. Jin ◽  
Kulbinder K. Banger ◽  
Jerry D. Harris ◽  
Aloysius F. Hepp

2021 ◽  
Author(s):  
Nao Zhang ◽  
Ya-bo Zhu ◽  
Tingting Xie ◽  
Chao Shi ◽  
Qian Xu ◽  
...  

Abstract In this paper, a dual solvent system of glycerol and ethylene glycerol was used to prepare nickel cobalt sulfide with different crystallinity. It was found that the crystallinity and morphology of the product had an important effect on its electrochemical performance. Therefore, the synthesis time was chosen between 1 and 18 h to control the crystallinity. The best sample (GENCS-3) was prepared within 3hour, and had flower-like structures. Its electrochemical tests showed that it had good ion transmission efficiency and excellent specific capacitance (1816F/g at 1A/g, 1620F/g at 10 A/g). Especially, its retention rate could arrive at 89.5% after 1000 cycles under a current density of 5A/g. The weak crystalline nickel-cobalt sulfide is easy to form porous structure, which can significantly increase capacitance, also maintaining good rate performance.


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