Group III Metal Sulfide Thin Films From Single-Source Precursors by Chemical Vapor Deposition (CVD) Techniques

1999 ◽  
Vol 606 ◽  
Author(s):  
Mike R. Lazell ◽  
Paul O'brien ◽  
David J. Otway ◽  
Jin-Ho Park
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Metal Sulfide ◽  
Chemical Vapor ◽  
Single Source ◽  
Group 13 ◽  
Single Source Precursors ◽  
Group Iii

AbstractSeveral single-source precursors including In(SOCNiBu2)3, In(S2CNMeHex)3 and Ga(S2CNMeR)3, (R = Et, Bu, Hex) have been prepared and used for the deposition of Group 13 metal sulfide thin films. The α and β-In2S3thin films on borosilicate glass and oc-Ga 2S3thin films on GaAs(111) single crystal substrates were prepared from the precursors by various chemical vapour deposition (CVD) techniques. These semicondcuting materials have been characterized by XRD, SEM, XPS and EDAX.

scholarly journals N,N-Disubstituted-N′-acylthioureas as modular ligands for deposition of transition metal sulfides

2018 ◽  
Vol 47 (8) ◽  
pp. 2719-2726 ◽  
Author(s):  
Zahra Ali ◽  
Nathaniel E. Richey ◽  
Duane C. Bock ◽  
Khalil A. Abboud ◽  
Javeed Akhtar ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Transition Metal ◽  
Vapor Deposition ◽  
Metal Sulfide ◽  
Chemical Vapor ◽  
Metal Sulfides ◽  
Single Source ◽  
Transition Metal Sulfides ◽  
Single Source Precursors

Readily available N,N-disubstituted-N′-acylthiourea complexes are single source precursors for aerosol assisted chemical vapor deposition of metal sulfide thin films.

Organometallic Chemical Vapor Deposition of Group-III Nitride Thin Films using Single Source Precursors

1997 ◽  
Vol 482 ◽  
Author(s):  
Roland A. Fischer ◽  
Wolfram Rogge
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Decomposition Temperature ◽  
The Novel ◽  
Single Source ◽  
Single Source Precursors ◽  
Group Iii ◽  
Group Iii Nitride

AbstractThe OMCVD of AlN, GaN and InN thin films using the novel single source precursors (N3)2Ga[(CH2)3NMe2] (1), (N3)In[(CH2)3NMe2]2 (2) and (N3)Al(CH2)3NMe2]2 (3) is reported. The compounds are non-pyrophoric. Compound 2 is air stable. No additional N-sources were used for the growth of the nitrides. We achieved epitaxial (AlN, GaN) or polycrystalline (InN) growth at least 200°C below the decomposition temperature of the respective nitride. Some aspects of the reactivity of the precursors with ammonia and the resulting influence on the deposition process were investigated.

Chemical vapour deposition of II–VI semiconductor thin films using M[(TePiPr2)2N]2(M = Cd, Hg) as single-source precursors

2006 ◽  
Vol 16 (10) ◽  
pp. 966-969 ◽  
Author(s):  
Shivram S. Garje ◽  
Jamie S. Ritch ◽  
Dana J. Eisler ◽  
Mohammad Afzaal ◽  
Paul O'Brien ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Single Source ◽  
Single Source Precursors ◽  
Semiconductor Thin Films

scholarly journals Combining single source chemical vapour deposition precursors to explore the phase space of titanium oxynitride thin films

2018 ◽  
Vol 47 (31) ◽  
pp. 10536-10543 ◽  
Author(s):  
Kelly Rees ◽  
Emanuela Lorusso ◽  
Samuel D. Cosham ◽  
Alexander N. Kulak ◽  
Geoffrey Hyett
Keyword(s):  
Thin Films ◽  
Phase Space ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Single Source ◽  
Single Source Precursors

Combining single-source precursors in aerosol assisted CVD allows control of the composition of mixed anion titanium oxynitride thin films.

scholarly journals Synthesis and properties of MoCl4complexes with thio- and seleno-ethers and their use for chemical vapour deposition of MoSe2and MoS2films

2018 ◽  
Vol 47 (7) ◽  
pp. 2406-2414 ◽  
Author(s):  
Yao-Pang Chang ◽  
Andrew L. Hector ◽  
William Levason ◽  
Gillian Reid ◽  
Joshua Whittam
Keyword(s):  
Thin Films ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Single Source ◽  
Chloride Complexes ◽  
Single Source Precursors

A new series of Mo(iv) chloride complexes with thioether and seleneoether ligands is reported; [MoCl4(nBu2E)2] (E = S, Se) function as single source precursors for the CVD of MoE2thin films.

Heterocyclic lead(II) thioureato complexes as single-source precursors for the aerosol assisted chemical vapour deposition of PbS thin films

2018 ◽  
Vol 479 ◽  
pp. 42-48 ◽  
Author(s):  
Kevin I.Y. Ketchemen ◽  
Sixberth Mlowe ◽  
Linda D. Nyamen ◽  
Ahmed A. Aboud ◽  
Matthew P. Akerman ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Single Source ◽  
Single Source Precursors

Homoleptic zirconium amidates: single source precursors for the aerosol-assisted chemical vapour deposition of ZrO2

2016 ◽  
Vol 4 (45) ◽  
pp. 10731-10739 ◽  
Author(s):  
Amanda L. Catherall ◽  
Michael S. Hill ◽  
Andrew L. Johnson ◽  
Gabriele Kociok-Köhn ◽  
Mary F. Mahon
Keyword(s):  
Thin Films ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Single Source ◽  
Single Source Precursors ◽  
Single Source Precursor ◽  
Original Family

We report the development of a true single source precursor for the growth of zirconia thin films by aerosol-assisted chemical vapour deposition using an original family of zirconium(iv) amidate derivatives.

scholarly journals Chalcogenoether complexes of Nb(v) thio- and seleno-halides as single source precursors for low pressure chemical vapour deposition of NbS2 and NbSe2 thin films

2017 ◽  
Vol 46 (30) ◽  
pp. 9824-9832 ◽  
Author(s):  
Yao-Pang Chang ◽  
Andrew L. Hector ◽  
William Levason ◽  
Gillian Reid
Keyword(s):  
Thin Films ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Low Pressure ◽  
Single Source ◽  
Single Source Precursors ◽  
Pressure Chemical

A series of thioether complexes of NbSCl3 has been prepared and selected examples demonstrated as precursors to 3R-NbS2 films; deposition of 2H-NbSe2 from [NbSe2Cl3(SenBu2)] is also reported.

Correction to Organotin Dithiocarbamates: Single-Source Precursors for Tin Sulfide Thin Films by Aerosol-Assisted Chemical Vapor Deposition (AACVD)

2014 ◽  
Vol 26 (10) ◽  
pp. 3348-3348 ◽  
Author(s):  
Karthik Ramasamy ◽  
Vladimir L. Kuznetsov ◽  
Kandasamy Gopal ◽  
Mohammad A. Malik ◽  
James Raftery ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Tin Sulfide ◽  
Single Source ◽  
Single Source Precursors
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